• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.167-173
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• 2013

A series of highly efficient red phosphorescent heteroleptic iridium(III) complexes 1-6 containing two cyclometalating 2-(2,4-substitued phenyl)quinoxaline ligands and one chromophoric ancillary ligand were synthesized: (pqx)$_2Ir$(mprz) (1), (dmpqx)$_2Ir$(mprz) (2), (dfpqx)$_2Ir$(mprz) (3), (pqx)$_2Ir$(prz) (4), (dmpqx)$_2Ir$(prz) (5), (dfpqx)$_2Ir$(prz) (6), where pqx = 2-phenylquinoxaline, dfpqx = 2-(2,4-diflourophenyl)quinoxaline, dmpqx = 2-(2,4-dimethoxyphenyl)quinoxaline, prz = 2-pyrazinecarboxylate and mprz = 5-methyl-2-pyrazinecarboxylate. The absorption, emission, electrochemical and thermal properties of the complexes were evaluated for potential applications to organic light-emitting diodes (OLEDs). The structure of complex 2 was also determined by single-crystal X-ray diffraction analysis. Complex 2 exhibited distorted octahedral geometry around the iridium metal ion, for which 2-(2,4-dimethoxyphenyl)quinoxaline N atoms and C atoms of orthometalated phenyl groups are located at the mutual trans and cis-positions, respectively. The emission spectra of the complexes are governed largely by the nature of the cyclometalating ligand, and the phosphorescent peak wavelengths can be tuned from 588 to 630 nm with high quantum efficiencies of 0.64 to 0.86. Cyclic voltammetry revealed irreversible metal-centered oxidation with potentials in the range of 1.16 to 1.89 V as well as two quasi-reversible reduction waves with potentials ranging from -0.94 to -1.54 V due to the sequential addition of two electrons to the more electron-accepting heterocyclic portion of two distinctive cyclometalated C^N ligands.

• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.605-609
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• 2003

The lower-order lithium organocyanocuprate compound, (THF)₃Li(NC)Cu($C_6$H₃-2,6-Mes₂) (1), and the bulky terphenyl Grignard reagent, Br(THF)₂Mg($C_6$H₃-2,6-Trip₂) (2), have been synthesized and structurally characterized both in the solid state by single crystal x-ray crystallography and in solution by multi-nuclear NMR and IR spectroscopy. The compound (1) was isolated as a monomeric contact ion-pair in which the C (organic ipso)-Cu-CN-Li atoms are coordinated linearly. The lithium has a tetrahedral geometry as a result of solvation by three THF molecules. The compound (1) is the first example of fully characterized monomeric lower order lithium organocyanocuprate. The bulky Grignard reagent (2) was also isolated as a monomer in which the magnesium, solvated by two THF molecules, has a distorted tetrahedral geometry. The crystals of (1) possess triclinic symmetry with the space group $P{\={1}}$, Z = 2, with a = 12.456(3) Å, b = 12.508(3) Å, c = 13.904(3) Å, α = 99.81°, β = 103.72(3)°, and γ = 119.44(3)°. The crystals (2) have a monoclinic symmetry of space group $P2_{1/C}$, Z = 4, with a = 13.071(3) Å, b = 14.967(3) Å, c = 22.070(4) Å, and β = 98.95(3)°.

• 한국광학회지
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• 제13권5호
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• pp.400-407
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• 2002

2차원 공간 고립파는 비선형 굴절률이 빛의 세기에 따라 일정한 값에 수렴하는 포화 매질에서 안정적으로 전파될 수 있다. 그러나 빛의 세기가 크지 않은 경우, 5차 비선형 굴절률이 음수인 매질은 포화 매질의 특성을 가지므로 2차원 공간 고립파가 전파될 수 있다. 2차원 비선형 슈뢰딩거 방정식의 전산 시늉을 통하여 빛의 세기가 크지 않은 경우 가우시안 빛살이 5차 비선형 매질을 전파하는 과정을 조사하였다. 그 결과 자체 포획 일률로 입사시킬 때 가장 안정적으로 2차원 공간 고립파가 전파한다는 것을 알 수 있었다. 또한 위상차가 180$^{\circ}$인 두 공간 고립파를 0.05$^{\circ}$의 충돌각으로 충돌시키면서 한 쪽 고립파의 입사 일률을 조절한다면 출력단에서 두 공간 고립파의 완전 광 스위칭이 가능함을 확인하였다.

• 문화기술의 융합
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• 제9권6호
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• pp.855-859
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• 2023

질산구리삼수화물염(copper(II) nitrate trihydrate) 수용액을 공업용 전분(starch)에 함침 시킨 전구체를 이용하여 산화구리(CuO) 나노 입자를 합성하였다. 주사전자현미경(SEM)을 통하여 질산구리삼수화물염 수용액이 함침된 전구체에 대한 구조를 분석하였고, 전구체에 대한 열처리 온도를 증가 시킴에 따라 생성되는 산화구리 입자의 입자 크기와 결정 구조를 X선회절분석법(XRD)과 주사전자현미경(SEM)으로 분석하였다. 분석 결과에 따르면, 전구체에서 유기물질이 완전히 열분해 되어지는 온도는 450-490℃이며, 열처리하는 온도가 증가함에 따라 생성되는 산화구리 입자의 크기와 결정성이 증가하는 것을 확인할 수 있었고, 또한 500-800℃에서 1시간씩 열처리하여 얻은 산화구리 입자의 크기는 100nm-2㎛인 것으로 나타났다. 하소 온도 400℃에서 산화구리 결정상이 형성되고, 800℃까지는 산화구리 단일상만 존재하며, 하소 온도의 증가에 따라 생성되는 입자의 크기가 커지는 것을 확인하였다.

• 공업화학
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• 제3권3호
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• pp.412-421
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• 1992

단결정 기판위에 증착된 고온 초전도 박막은 microelectronic 장치의 실제적인 응용을 위한 가능성을 보여주고 있다. 고온 초전도 Y-Ba-Cu-O 박막을 원료물질로서 $Y(thd)_3$, $Ba(thd)_2$와 $Cu(thd)_2$의 유기금속 킬레이트를 사용하였고 단결정 MgO(100), YSZ(100), $SrTiO_3(100)$와 다결정 $SrTiO_3$기판에 화학증착법을 통해 제조하였다. 박막의 증착두께는 증착시간이 증가함에 따라 선형적으로 증가하였다. 단결정 MgO(100), YSZ(100), $SrTiO_3(100)$ 기판 위에 증착한 Y-Ba-Cu-O 박막은 액체질소 비등온도($T_{C,onset}=87{\sim}89K$, $T_{C,zero}=85{\sim}86K$) 이상에서 초전도성을 나타내었으나 다결정 $SrTiO_3$ 기판은 액체질소 비등온도 이상에서 제로저항을 갖지 않았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 한국재료학회지
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• 제4권6호
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• pp.681-686
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• 1994

$YBa_{2}Cu_{3}O_{7-x}$결정입계 접합을 이용한 마이크로파 감지소자 $YBa_{2}Cu_{3}O_{7-x}$초전도체 박막을 화학증착법을 이용하여 $LaAIO_{3}$단결정 위에 증착하여 임계온도 90K이상 임계전류밀도 $10^5/A \textrm{cm}^2$(77K) 이상의 우수한 박막을 제작하였다. 이를 포토작업과 이온밀링을 실시하여 수 마이크로미터 크기의 브릿지 형태로 만든 후 이들의 전류전압 특성을 조사하였다. 브릿지에 입사된 마이크로파의 크기에 따라 브릿지 간의 임계전류값의 저하가 관찰되었으며 동시에 샤피로스텝을 관찰할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.