• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.598-602
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• 2004

Organic light entitling diode panel was fabricated using pulsed laser deposition (PLD) method Nd-YAG laser with Q-Switched and 355 nm pulse was used for the PLD. While TPD(N,N'-Di-[naphthaleny]-N, N'-diphenyl-benzidine) was used as a HTL(Hole transport layer), $Alq_3$(8-Hydroxyquinoline, Aluminum Salt) was used as EML/ETL(Emitting Layer/Electron Transport Layer) Organic pellet was fabricated and employed for the PLD method. The absorbances of the organic films were investigated and the measured absorbance values of TPD and $Alq_3$ films was 362 nm and 399 nm, respectively. The turn-on voltage of the OLED panel was 7.5 V and its luminance was $90\;cd/m^2$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.563-567
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• 2006

Indium tin oxide (ITO) used as an electrode in organic light emitting diodes (OLEDs) and organic thin film transistors (OTFTs) was modified by a self-assembled monolayer (SAM). For device fabrication, surface of the ITO was modified by immersion in a solution including various phosphonic acid at room temperature in order to increase work function of an electrode. The work function of ITO with SAM was measured by Kelvin probe. Work function increase of 0.88 eV was observed in ITO with various SAM. Therefore, ohmic contact is achieved in an interface between ITO and organic semiconductors (pentacene). We analyzed the origin of work function increase of ITO with SAM by X-ray photoelectron spectroscopy. We confirmed that increase of oxygen bonding energy attributed to increase the work function of ITO. These results suggested that ITO with the SAM gives a high possibility for high performance of OLEDS and OTFTs.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1511-1513
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• 2005

The polymer-light emtting diodes(PLEDs) were comprised a design of OLED array, process develop by using ITO thin glass, and fabrication of PDMS stamp by using nanocontact printing. In the study, we describe a different approach for building OLEDs, which is based on physical lamination of thin metal electrodes supported by a PDMS stamp layer against an electroluminescent organic. We develop that devices fabricated in this manner have better performance than those constructed with standard processing techniques. The lamination approach avoids forms of disruption that can be introduced at the electrode organic interface by metal evaporation and has a reduced sensitivity to pinhole or partial pinhole defects. Also, it is easy to build patterned PLED with feature sizes into the nanometer regime. This method provides a new route to PLED for applications ranging from high performance displays to storage and lithography systems, and PLED can used for organic electronics and flexible display.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1570-1572
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• 2004

OLED(organic light-emitting diode)소자에 사용되는 ITO(Indium-tin oxide)전극에 Ar/$O_3$ 플라즈마 표면처리 함으로써 ITO전극에 표면상태의 개선에 좋은 영향을 미치는 것으로 나타났다. 13.56MHZ RF 플라즈마 장치를 이용하여 Ar/$O_3$ 플라즈마 처리한 후 AFM(atomic force microscopy)측정을 통해 표면 morphologyjroughless를 분석하고, XPS(X-Ray Photoelectron Spectroscopy)분석을 통해 표면의 화학적 조성비 분석을 수행 하였다.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.321-324
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• 2004

This paper presents a package IC containing some components of DC/DC converter block for mobile phone's sub OLED(Organic Light Emitting Display). Package IC contains a load switch, a control IC, a diode, a switch for on/off operation, and a switch for changing output voltage. It operates with switching frequency of 100kHz, within the range of input voltage, $3.2V\~5.5V$. Duty ratio can be changed up to $93\%$, and maximum power efficiency is $85\%$. This package IC is loaded onto three model of 1.2W mobile phone's sub-OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.318-319
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• 2006

기존에 사용되고 있는 ITO(Indium-Tin-Oxide)의 저항보다 낮은 저항을 가지는 AZO(ZnO-Ag-ZnO) 전극을 Top emission 방식의 OLED(organic light emitting diode)에 적용하여 발광 소자를 제작하였다. AZO박막은 기존의 ITO박막이 수십 ${\Omega}$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.517-520
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• 2008

A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.