Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Low-Temperature Processed Thin Film Barrier Films for Applications in Organic Electronics

유기전자소자 적용을 위한 저온 공정용 배리어 박막 연구

  • Kim, Junmo (Realistic Media Research Center, Gumi Electronics and Information Technology Research Institute) ;
  • An, Myungchan (Realistic Media Research Center, Gumi Electronics and Information Technology Research Institute) ;
  • Jang, Youngchan (Realistic Media Research Center, Gumi Electronics and Information Technology Research Institute) ;
  • Bae, Hyeong Woo (Realistic Media Research Center, Gumi Electronics and Information Technology Research Institute) ;
  • Lee, Wonho (Department of Polymer Science and Engineering, Kumoh National Institute of Technology) ;
  • Lee, Donggu (Realistic Media Research Center, Gumi Electronics and Information Technology Research Institute)
  • 김준모 (구미전자정보기술원 실감미디어 연구센터) ;
  • 안명찬 (구미전자정보기술원 실감미디어 연구센터) ;
  • 장영찬 (구미전자정보기술원 실감미디어 연구센터) ;
  • 배형우 (구미전자정보기술원 실감미디어 연구센터) ;
  • 이원호 (금오공과대학교 고분자공학전공) ;
  • 이동구 (구미전자정보기술원 실감미디어 연구센터)
  • Received : 2019.11.21
  • Accepted : 2019.11.27
  • Published : 2019.11.30
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Abstract

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiNx thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiNx thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiNx film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiNx thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiNx exhibited improved operating lifetime

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References

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