• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.3
• /
• pp.55-62
• /
• 2001

With a spread of BGA, CSP and fine pitch devices, the need of flatter surface finish in bare board is becoming more critical in solderability. The electroless Ni/Au plating has a solution of these needs and also has being spread to apply to surface finish for bare board in many electronic goods. But, the electroless Ni/Au plating had several issues such as Ni oxidation and phosphorous contents. Before this study, we studied on the effect of BGA solderability in electroless Ni/Au plating and chose some major factors such as the oxidation property of NiP plating and warpage of board. Firstly, we made test board with various plating conditions and improved the plating property through the improvement of NiP oxidation reducing P content. Also, we minimized the warpage of board with the improvement of inner layer structure and the analysis of warpage. For the evaluation of solderability, we analyzed the warpage of board and the plating property after mounting BGA on the board with optimizing conditions. The solder joint of BGA is investigated by SEM(Scanning Electronic Microscope) and OM(Optical Microscope). The composition of joint is used by EDS(Energy Dispersive Spectroscopy). We analyzed the fracture strength and mode by ball shear teser.

• Journal of the Institute of Electronics Engineers of Korea SP
• /
• v.49 no.2
• /
• pp.149-156
• /
• 2012

Support vector machines (SVMs) are well known for their pattern recognition capability, but proper care should be taken to alleviate their inherent implementation cost resulting from high computational intensity and memory requirement, especially in embedded systems where only limited resources are available. Since the memory requirement determined by the dimensionality and the number of support vectors is generally too high for a cache in embedded systems to accomodate, frequent accesses to the main memory occur inevitably whenever the cache is not able to provide requested data to the processor. These frequent accesses to the main memory result in overall performance degradation and increased energy consumption because a memory access typically takes longer and consumes more energy than a cache access or a register access. In this paper, we propose a technique that reduces the number of main memory accesses by optimizing the data access pattern of the SVM-based classifier in such a way that the temporal locality of the accesses increases, fully utilizing data loaded into the processor chip. With experiments, we confirm the enhancement made by the proposed technique in terms of the number of memory accesses, overall execution time, and energy consumption.

• Journal of the Korean Society for Railway
• /
• v.20 no.4
• /
• pp.529-538
• /
• 2017

There has been much interest in optimizing the halting patterns of high-speed trains, for example by introducing more non-stop trains to supply faster train service to the passengers, which could later bring about a discussion about introducing new high speed train service with differentiated price and service. In general, halting patterns can be considered by constructing an efficient line plan, in which all demand should be covered and the total travel time can be reduced as much as possible. In this study, we present a two-step process based on two optimization models. One is to minimize total kilometers of trains to run on each route ; this will be done using a line planning model under the assumption of all-stop patterns. Then, in the next step, the all-stop patterns are optimally decomposed into several halting patterns in order to minimize the total travel time. We applied the two-step process to the latest demand data in order to develop KTX halting patterns as well as to determine the frequency of each line and compare the current line plan with the optimized one.

• Journal of the Korean Data and Information Science Society
• /
• v.26 no.6
• /
• pp.1353-1366
• /
• 2015

These days Shewhart control chart for evaluating stability of the process is widely used in various field. But it must follow strict assumption of distribution. In real-life problems, this assumption is often violated when many quality characteristics follow non-normal distribution. Moreover, it is more serious in multivariate quality characteristics. To overcome this problem, many researchers have studied the non-parametric control charts. Recently, SVDD (Support Vector Data Description) control chart based on RBF (Radial Basis Function) Kernel, which is called K-chart, determines description of data region on in-control process and is used in various field. But it is important to select kernel parameter or etc. in order to apply the K-chart and they must be predetermined. For this, many researchers use grid search for optimizing parameters. But it has some problems such as selecting search range, calculating cost and time, etc. In this paper, we research the efficiency of selecting parameter regions as data structure vary via simulation study and propose a new method for determining parameters so that it can be easily used and discuss a robust choice of parameters for various data structures. In addition, we apply it on the real example and evaluate its performance.

• Journal of Ocean Engineering and Technology
• /
• v.2 no.2
• /
• pp.112-121
• /
• 1988

A study on friction welding of carbon steel bar (SM45C) to chrome molybedenum steel bar(SCM4) is examined experimentally through tensile test, hardness test, microstructure test and fatigue test. so, this paper deals with optimizing the welding concitions and analyzing various mechanical properties about friction welds of SM45C to SCM4 steel bars. The results obtained are summarized as follows; 1) For friction welded joints of SM45C to SCM4 steel bars, the total upset(U)increases linearly with an increase of heating time ($t_{1}$) till 6s. 2) The determined optimum welding conditions are heating time ($t_{1}$)2s, upsetting time($t_{2}$), 3s, heating pressure($p_{1}$), 4kgf/$mm^{2}$(39.2MPa), upsetting pressure($p_{2}$, 8kgf/mm$^{2}$(78.4MPa) and rotating speed(N), 2, 000rpm when the total upset(U) is 3.4mm, resulting in a computed relationship between the joint tensile strength .sigma.$_{t}$ (kgf/mm$^{2}$and the total upset U(mm); .sigma.$_{t}$ =$0.21U^{3}$ - $3.38U^{2}$ +17.03U + 66.00 3) As the elongation is increased more and more, the fracture position becomes away from weld interface and the fractures are similar to those of SM45C. Fracture is taken place on SM45C side. 4) The weld interface of two dissimilar materials is mixed strongly, and the heat affected zone is about 2.0mm at SM45C while about 2.7 mm at SCM4 side. Therefore, the welded zone and heat affected zone are very narrow, comparing with those of the joints welded by the other welding methods. 5) The fatigue strengths at N=10$^{6}$ cycles of SM45C, SCM4 and friction welded joints are 23kgf/$mm^{2}$, 33kgf/$mm^{2}$(220.5 MPa), and 22.5kgf/$mm^{2}$(220.5MPa) respectively, and fracture at friction welded joint takes place at the side of SM45C. 6) The hardness of the friction weld interface is 3 times higher than that of base metal. 7) Fatigue strength of friction welded joint is higher than that of base metal. 8) Notch sensitivity factor of friction welded joint is lower than that of base metal.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.15 no.3
• /
• pp.286-293
• /
• 1986

The purpose of this study was to investigate the effect of withering on mechanical properties for optimizing the condition of transportation and storage of fresh leafy vegetables which they would be easily able to be suffered the physical damage. Experimental material used were spinaches and leeks which were easily apt to be withered. The breaking stress, elastic modulus and viscosity were measured in the range of temperature $3{\sim}37^{\circ}C$ and water content $70{\sim}95%$ by the four element model, being used the creep tester made by author. As a result of this study, while water content was decreased, breaking stress was increased. The elastic modulus and viscosity of the specimens were not influenced on temperature, but on water content. In reversibility test of the withering, the appearance, water content and elastic modulus of the specimens were completely recovered to the initial freshness, but the viscosity was not.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.477-477
• /
• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.480-480
• /
• 2008

Vacuum circuit breaker(VCB) is now emerging as an alternative of gas circuit breaker(GCB) which uses SF6 gas as insulating material whose dielectric strength is outstanding. But we have to reduce SF6 gas because SF6 gas is one of greenhouse gas and efforts to reduce greenhouse gas are now trend of the world. Therefore, we can say VCB is the optimal alternative of GCB because vacuum is environmentally friendly. The vacuum interrupter is the core part of VCB to interrupt arcing current. There are mainly two methods to extinguish arc. One is radial magnetic field (RMF) method and the other is axial magnetic field (AMF) method. We deals with RMF method in this paper. Compared with AMP, RMF arc quenching method has different principle to extinguish arc. In case of RMF method, pinch effect is much larger than AMF method. Because of pinch effect RMF type contact electrodes have the single large spot which is severly damaged and melted while AMF type contact electrodes have small and multiple spots which are slightly damaged and melted. To prevent contact electrode being damaged and melted from high temperature-arc, RMF method uses Lorentz force to move arc. In this paper we calculated and compared the arc driving force of two cases and we analyzed the force acting on each part of arc by means of commercial finite element method software Maxwell 3D. They have 3petals and we considered two cases. One is the case when fixed(upper) and movable(lower) contacts are in mirror arrangement (Case 1). The other is the case when one of two contacts (movable contact) is revolved at maximum angle as possible as it can be (Case 2). And at each case above, we analyzed arc driving force at two positions, position 1 is the closest to the center of contact and position 2 is near the edge of petal on fixed contact. As a result we could find that Case 2 generated stronger arc driving force than Case 1 at position 1. But at position 2 Case 1 generated stronger arc driving force than Case 2. This simulation method can contribute to optimizing spiral-type electrode designs in a view of arc driving force.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.1
• /
• pp.73-79
• /
• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• The KIPS Transactions:PartD
• /
• v.16D no.6
• /
• pp.851-858
• /
• 2009

Mobbing is not restricted to problem of young people but the bigger recent problem occurs in workspaces. According to reports of ILO and domestic case mobbing in the workplace is increasing more and more numerically from 9.1%('03) to 30.7%('08). These mobbing brings personal and social losses. The proposed algorithm makes it possible to grasp not only current mobbing victims but also potential mobbing victims through user profile and contribute to efficient personnel management. This paper extracts user profile related to mobbing, in a way of selecting seven factors and fifty attributes that are related to this matter. Next, expressing extracting factors as '1' if they are related me or not '0'. And apply similarity function to attributes summation included in factors to calculate similarity between the users. Third, calculate optimizing weight choosing factors included attributes by applying neural network algorithm of SPSS Clementine and through this summation Mobbing-Value(MV) can be calculated . Finally by mapping MV of online social network users to G2 mobbing propensity classification model(4 Groups; Ideal Group of the online social network, Bullies, Aggressive victims, Victims) which is designed in this paper, can grasp mobbing propensity of users, which will contribute to efficient personnel management.