• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.54-54
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• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.402.2-402.2
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• 2016

In photoelectrochemical (PEC) water splitting, Cu2ZnSnS4 (CZTS) compound has attracted intense attention as a photocathode due to not only large optical absorption coefficient, but also earth-abundance of constituent elements and suitable band alignment. With rapid development of nanotechnology, one-dimensional nanostructures of CZTS have been investigated as a potential form to achieve high efficiency because the nanostructures are expected to be capable of capturing more light and enhancing charge separation and transport. Here, we report a well-controlled fabrication route for vertically-aligned CZTS nanorod arrays on anodic aluminium oxide (AAO) template via simple sol-gel process followed by deposition of ZnS or CdS buffer layers on the CZTS nanorod to enhance charge separation. The structure, morphology, composition, optical absorption, and PEC properties of the resulting CZTS nanorod samples were characterized using X-ray diffraction, Raman spectroscopy, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectroscopy.

• Transactions of Materials Processing
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• v.20 no.1
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• pp.60-63
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• 2011

BLU(back light unit) is one of kernel parts of LCD(liquid crystal display) unit. New 3-D micro-lens pattern for LGP(light guide plate), one of the most important parts of LCD-BLU, had been researched. Instead of dot pattern made by chemical etching or laser ablation, SCS(slanted curved surface) micro-lens pattern was designed with optical CAE simulation. This study introduce the method of design using optical CAE simulation for SCS micro-lens, the new fabrication method of micro-mold with SCS micro-lens pattern.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.169-171
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• 2009

We have fabricated CIGS thin film absorber layers by the evaporation of CIGS powders which were synthesized by solutions with different atomic ratio compositions. We found that the polycrystalline structural properties and optical properties of the deposited CIGS thin films were strongly dependent on the CIGS powder synthesis solution compositions. For three different solution compositions, Cu:In:Ga:Se= 4:3:1:8, 8:3:1:8, 12:3:1,8, the deposited thin film crystalline structures were varied form InSe crystalline structure to CIGS chalcopyrite structures. Our results showed that CIGS powder evaporation is potential for the one step fabrication process for CIGS thin film absorber layer deposition.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.241-244
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• 2004

Microlens patterned micro-mold fabrication method for Light Guiding Plate(LGP), kernel part of LCD-BLU(Back Light Unit), was presented. Instead of erosion dot pattern for LCP optical design, microlens pattern, fabricated by LIGA-reflow process, was applied. Optical pattern design method was also developed not only for negative pattern LGP, but also positive pattern LGP. In order to achieve flow balance during the micro-injection molding process and dimensional accuracy, two LGP pattern was made in one micro-mold.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.762-765
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• 2014

We fabricated a periodically poled lithium niobate (PPLN) by direct laser-writing of a quasi-phase-matching (QPM) structure in photolithographic process. Because we do not need to prepare a photomask by electron-beam writing, the "maskless" process shortens the fabrication time and significantly reduces the cost. We evaluated the poling quality of the direct laser-written PPLN by measuring the diffraction noise from the surface relief pattern of the fabricated QPM grating and comparing the results to those from a conventional PPLN made with a photomask. The quality of the PPLN fabricated by direct laser-writing was shown to be equivalent to that fabricated by the conventional method.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.190-193
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• 1991

The monolithically integrated receiver OEIC using InGaAs/InP PIN PD, junction FET's and bias resistor has been fabricated on semi-insulating InP substrate. The fabrication process is highly compatible between PD and self-aligned JFET, and reduction in gate length is achieved using an anisotropic selective etching and a non-planar OMVPE process. The PIN photodetector with a 80 ${\mu}{\textrm}{m}$ diameter exhibits current of less than 5 nA and a capacitance of about 0.35 pF at -5 V bias voltage. An extrinsic transconductance and a gate-source capacitance of the JFET with 4 ${\mu}{\textrm}{m}$ gate length (gate width = 150 ${\mu}{\textrm}{m}$) are typically 45 mS/mm and 0.67 pF at 0 V, respectively. A voltage gain of the pre-amplifier is 5.5.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.52-59
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• 1997

Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.139-145
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• 1994

InGaAsP/InP PBH-DFB-LD emitting at 1.55${\mu}$m wavelength has been fabricated for 2.5Gbps optical fiber communcations. For fabrication of PBH-DFB-LD, Interference expose for grating formation 3-step LPE epitaxial growth were used. Fabricated PBH-DFB-LD operates in single longitudinal mode with larger than 35dB SMSR and wider than 3dB bandwidth of 3GHz. A 8${\mu}$m mesa structure was introduced by channel etching to reuce parasitic capacitance. To reduce pad capacitance, we designed a small electrode. 0.27mW/mA in the case of spectrum shows single logitudinal mode operation with larger thatn 30dB SMSR measured at 5mW.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.4
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• pp.307-320
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• 1989

This paper presetns new design of the Modified Chemical Vapor Deposition(MCVD) system for optical fiber preform fabrication. It contains a glass working lathe, raw material supplier and exhaust gas treatment apparatus as fundamental instruments for MCVD process, graded index fiber design, characteristic of process and the experimenta arrangement to measure the refractive index profile of MCVD preforms, respectively. From the investigation results, it is shown that an ideal graded index fiber preform does not exhibit a center dip or bump.