Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Characteristics of 1.55$\mu\textrm{m}$ InGaAsP/InP PBH-DFB-LD for 2.5Gbps Optical Fiber Communication

2.5Gbps 광통신용 1.55$\mu\textrm{m}$ InGaAsP/InP PBH-DFB-LD 제작 및 특성

  • 이중기 (한국전자통신연구소 화합물반도체 연구부) ;
  • 장동훈 (한국전자통신연구소 화합물반도체 연구부) ;
  • 조호성 (한국전자통신연구소 화합물반도체 연구부) ;
  • 이승원 (한국전자통신연구소 화합물반도체 연구부) ;
  • 박경현 (한국전자통신연구소 화합물반도체 연구부) ;
  • 김정수 (한국전자통신연구소 화합물반도체 연구부) ;
  • 김홍만 (한국전자통신연구소 화합물반도체 연구부) ;
  • 박형무 (한국전자통신연구소 화합물반도체 연구부)
  • Published : 1994.09.01
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Abstract

InGaAsP/InP PBH-DFB-LD emitting at 1.55${\mu}$m wavelength has been fabricated for 2.5Gbps optical fiber communcations. For fabrication of PBH-DFB-LD, Interference expose for grating formation 3-step LPE epitaxial growth were used. Fabricated PBH-DFB-LD operates in single longitudinal mode with larger than 35dB SMSR and wider than 3dB bandwidth of 3GHz. A 8${\mu}$m mesa structure was introduced by channel etching to reuce parasitic capacitance. To reduce pad capacitance, we designed a small electrode. 0.27mW/mA in the case of spectrum shows single logitudinal mode operation with larger thatn 30dB SMSR measured at 5mW.

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