• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.130-134
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• 2018

In the past few years, various solder compositions have been a representative material to electronic packages and surface mount technology industries as a replacement of Pb-base solder alloy. Therefore, extensive studies on process and/or reliability related with the low Ag composition have been reported because of recent rapid rise in Ag price. In this study, Sn-3.0Ag-0.5Cu, Sn-0.7Cu and Sn-0.3Ag-0.5Cu solder bar samples were fabricated by melting of Sn, Ag and Cu metal powders. Crystal structure and element concentration were analyzed by XRD, XRF, optical microscope, FE-SEM and EDS. The fabricated solder samples were composed of ${\beta}-Sn$, ${\varepsilon}-Ag_3Sn$ and ${\eta}-Cu_6Sn_5$ phases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.66-72
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• 2000

The behavior of nucleation and crystallization in the $Li_2O_3-SiO_2$ glass heat-treated at different condition under the conventional and microwave processing was studied by differential thermal analysis (DTA), X-ray diffractometry (XRD), optical microscopy (OM), and electrical conductivity measurement. Nucleation temperature and temperature of maximum nucleation rate in both conventionally and microwave heat-treated samples were 460~$500^{\circ}C$ and $580^{\circ}C$, respectively. It was expected that the probability for bulk crystallization increased in microwave heat-treated sample, compared to conventionally heat-treated one. Degree of crystallization increased with increasing crystallization temperature in both conventionally and microwave heat-treated samples. However, pattern of crystallization growth under microwave processing appeared to be quite different from that under the conventional one due to its internal or volumetric heating. Electrical conductivity of conventionally and microwave heat-treated samples were 1.337~2.299, 0.281~~$0.911{\times}10^{-7}\Omega {\textrm}{cm}^{-1}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.227-231
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• 2010

Super hydrophilic $TiO_2$ thin films with photocatalytic property were successfully fabricated on a glass substrate by liquid phase deposition (LPD). The $TiO_2$ thin film formed nano particles on a surface at $70^{\circ}C$. As an immersion time in $TiF_4$ solution increased, the thickness of thin films gradually increased. $TiO_2$ thin film showed a water contact angel of below ca. $5^{\circ}$ and the transmittance of ca. 75~90 % in visible range. In addition, $TiO_2$ thin film showed the photocatalytic property to decompose methyl orange solution by the illumination of UV light. The surface morphologies, optical properties and contact angel of prepared thin films with a different immersion time were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.199-207
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• 2008

Wavelength converting devices with a ridge-type waveguide in periodically poled $MgO:LiNbO_3$ are made and characterized. The experimental results are compared with theoretical analysis on the effects of waveguide dimension and duty ratio of the periodically poled structure. To show the relationship of the conversion efficiency to those factors, a new measurement system is configured. That experimental results show that the center wavelength, normalized conversion efficiency and full width half maximum of the conversion efficiency curve are 1067.45 nm, 90.7%/$Wcm^2$ and 0.17 nm, respectively. Also, the estimated results of the duty period and full width half maximum of the conversion efficiency from theoretical calculations agreed well with experimental results with the errors of 0.016 ${\mu}m$ and 0.01 nm.

• Korean Journal of Optics and Photonics
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• v.18 no.3
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• pp.185-189
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• 2007

A novel technology for CWDM (Coarse Wavelength Division Multiplexer) utilizing a PLC (Planar Lightwave Circuit)-AWG (Arrayed Waveguide Grating) fabrication process is proposed. BPM (Beam Propagation Method) Simulation results on the employed parabolic-horn-type input slab waveguide of AWG and the performance of the 20 nm-channel spacing CWDM with flattened passband are presented. Waveguides of $0.75{\triangle}%$ have been used in this experiment and the insertion loss at the peak wavelength is 3.5 dB for a Gaussian spectrum and is 4.8 dB for a flat-top spectrum. The bandwidth at 3 dB is better than 10 nm and 13 nm for Gaussian and flat-top spectra, respectively.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.453-459
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• 2001

It is important for the fabrication of nuclear cladding to optimize the microstructure, because the properties of Zr-based nuclear claddings such as mechanical properties, oxidation-resistance and corrosion- resistance vary widely with its microstructure. The microstructure in Zr-based alloy is strongly dependent on the solubility of alloying element. However, it is very difficult to measure the solubility due to the low solution limit of alloying elements in Zr-based alloy. In this study, Thermoelectric Power(TEP) measurements are used to determine the solubility of Nb in Zr-0.8Sn alloy, which is confirmed by optical microscopy and transmission electron microscopy. The solutioning of Nb obtained by a homogenization treatment and water-quench leads to a decrease of TEP The saturation of TEP appears with the increase of homogenization temperature, which means the saturation of the Nb content in the matrix. From these results, the solubility ($C_{Nb}$) of Nb in Zr-0.8Sn with temperature could be expressed as fellow equation : $4.69097{\times}10^{16}{\times}e^{-25300\times\;I/T}$(ppm.at.%)

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.