• Journal of Microbiology and Biotechnology
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• 제16권12호
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• pp.1968-1976
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• 2006

Recombinant E. coli ACV 1003 (recA:: lacZ) was used to measure low concentrations of DNA-damaging chemicals, which produce $\beta$-galactosidase via an SOS regulon system. Very low $\beta$-galactosidase activities of less than 0.01 unit/ml, $\beta$-galactosidase produced through an SOS response corresponding to the 10 ng/ml (ppb) of DNA damaging chemicals in the environment, can be rapidly determined by using an alternative interferometric biosensor with optically flat thin films of porous silicon rather than by the conventional time-consuming Miller's enzyme assay as well as the ELISA method. fu order to enhance the sensitivity in the interferometry, it needs to obtain more uniform distribution and higher biolinking efficiency, whereas interferometric sensing is rapid, cheap, and advantageous in high throughput by using a multiple-well-type chip. In this study, pore size adjusted to 60 nm for the target enzyme $\beta$-galactosidase to be bound on both walls of a Si pore and a calyx crown derivative was apllied as a more efficient biolinker. Furthermore, anti-$\beta$-galactosidase was previously functionalized with the biolinker for the target $\beta$-galactosidase to be specifically bound. When anti-$\beta$-galactosidase was bound to the calyx-crown derivative-linked surface, the effective optical thickness was found to be three times as high as that obtained without using anti-$\beta$-galactosidase. The resolution obtained was very similar to that afforded by the time-consuming ELISA method; however, the reproducibility was still unsatisfactory, below 1 unit $\beta$-galactosidase/ml, owing to the microscopic non-uniform distribution of the pores in the etched silicon surface.

• Design & Manufacturing
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• 제7권1호
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• pp.55-59
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• 2013

A Light Emitting Diode(LED) is a semiconductor device which converts electricity into light. LEDs are widely used in a field of illumination, LCD(Liquid Crystal Display) backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. In general, LEDs production does die bonding and wire bonding on board, and do silicon and phosphor dispensing to protect LED chip and improve brightness. Then lens molding process is performed using mixed liquid silicon rubber(LSR) by resin and hardener. A mixture of resin and hardener affect the optical characteristics of the LED lens. In this paper, computational design of static mixer was performed for mixing of liquid silicon. To evaluate characteristic of mixing efficiency, finite element model of static mixer was generated, and fluidic analysis was performed according to length of mixing element. Finally, optimal condition of length of mixing element was applied to static mixer from result of fluidic analysis.

• 한국분말재료학회지
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• 제20권5호
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• pp.355-358
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• 2013

Micro trench structures are applied in gratings, security films, wave guides, and micro fluidics. These micro trench structures have commonly been fabricated by micro electro mechanical system (MEMS) process. However, if the micro trench structures are machined using a diamond tool on large area plate, the resulting process is the most effective manufacturing method for products with high quality surfaces and outstanding optical characteristics. A nonferrous metal has been used as a workpiece; recently, and hybrid materials, including polymer materials, have been applied to mold for display fields. Thus, the machining characteristics of polymer materials should be analyzed. In this study, machining characteristics were compared between nonferrous metals and polymer materials using single crystal diamond (SCD) tools; the use of such materials is increasing in machining applications. The experiment was conducted using a square type diamond tool and a shaper machine tool with cutting depths of 2, 4, 6 and 10 ${\mu}m$ and a cutting speed of 200 mm/s. The machined surfaces, chip, and cutting force were compared through the experiment.

• Journal of Welding and Joining
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• 제33권3호
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• pp.25-31
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• 2015

Due to environmental regulations (RoHS, WEEE and ELV) of the European Union, electronics and automotive electronics have to eliminate toxic substance from electronic devices and system. Specifically, reliability issue of lead-free solder joint have an increasing demand for the car electronics caused by ELV banning. The authors prepared engine control unit and cabin electronics soldered with Sn-3.0Ag-0.5Cu (SAC305). To compare with the degradation characteristics of solder joint strength, thermal cycling test (TC), power-thermal cycling test (PTC) and series tests were conducted. Series tests were conducted for TC and PTC combined stress test using the same sample in sequence and continuously. TC test was performed at $-40{\sim}125^{\circ}C$ and soak time 10 min for 1000 cycles. PTC test was applied by pulse power and full function conditions during 100 cycles. Combined stress test was tested in accordance with automotive company standard. Solder joint degradation was observed by optical microscopy and environment scanning electron microscopy (ESEM). In addition, to compare with deterioration of bond strength of quad flat package (QFP) and chip components, we have measured lead pull and shear strength. Based on the series test results, consequently, we have validated of series test method for lifetime and reliability of Pb-free solder joint in automotive electronics.

• 한국세라믹학회지
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• 제43권3호
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• 한국광학회지
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• 제14권1호
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• pp.97-102
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• 2003

이차원 표면 플라즈몬의 공명 흡수와 포토 마스크를 이용하여 11-MUA(11-Mercaptoundecanoic acid)와 11-MUOH(11-Mercaptoundecanol) 둥으로 이루어진 자기조립 단분자막(Self-Assembled Monolayer; SAM)의 다채널 영상을 얻었다. 통상의 Photoresist를 이용한 리토그래피 대신에 Thiol bonding의 광산화를 이용하여 패터닝 과정을 줄이고, 백색광 및 대역통과 필터(λ$_{0}$=633nm)를 이용하여 입사광으로써 레이저를 사용할 때 나타나는 간섭무늬를 줄였다. 이로부터 나타나는 이차원 영상의 명암을 정량적으로 보정하면 수 나노미터(nm) 두께의 변화를 측정할 수 있다. 또한 표면 플라즈몬 공명법은 국소화된 근접장 (소산장)을 이용하는 방법으로서, 통상 많이 이용되는 형광법 등에서 나타나는 광탈색(Photobleaching)이나 소광(Quenching) 현상이 없이 시료의 처리가 간단하고, 영상 신호의 시간에 따른 변화가 극히 적으며, 실시간으로 신호의 변화를 측정할 수 있다는 장점이 있다.

• 한국광학회지
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• 제18권4호
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• pp.235-240
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• 2007

본 논문에서는 10 Gbps급 데이터 전송을 위한 CPW(coplanar waveguide) 피드라인(feed-line)을 이용한 세라믹 스템(stem) 기반의 TO 패키지를 제안하였다. 기존의 금속 기반 TO 패키지에서 사용되는 실린더형 피드라인의 주파수 특성과 세라믹 패키지에서 사용되는 CPW 피드라인의 주파수 특성의 차이를 이론적으로 분석 비교하였다. 그리고 이들 패키지에 DFB 레이저다이오드(laser diode: LD)를 실장하여 측정된 3 dB 주파수 대역폭은 각각 3.5 GHz와 7.8 GHz로 사용된 패키지에 따라 큰 차이를 갖는 것을 밝혔다. 이러한 측정결과는 등가회로를 이용한 이론적인 계산결과와 잘 일치함도 확인하였다. 이상의 결과를 바탕으로 LD 광모듈의 주파수 특성을 개선하기 위한 방안으로 세라믹 재질의 비전도성 유전체를 스템으로 이용한 세라믹 스템 기반의 CPW 피드라인을 장착한 새로운 TO 패키지를 제안하였다. 제안된 패키지는 HFSS(high frequency structure simulator)를 이용하여 추출된 S 파라미터 값으로부터 기존의 금속 기반의 TO 패키지보다 월등히 넓은 주파수 특성을 얻을 수 있다는 것을 알 수 있었다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
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• pp.82-82
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• 2010

표면실장 공법을 통해 CSP 패키지를 보드에 실장 하는데 있어 무연솔더 접합부의 신뢰성에 영향을 미치는 인자 중 가장 중요한 것은 접합부에 형성되는 IMC (Intermetallic compound, 금속간화합물)인 것으로 알려져 있다. 접합부의 칩 부분에는 솔더와 칩의 UBM (Under bump metalization)이 접합하여 IMC가 형성되나, 보드 부분에는 솔더와 보드의 UBM 뿐만 아니라 그 사이에 솔더 페이스트가 함께 접합되어 IMC가 형성된다. 본 연구에서는 패키지의 신뢰성 연구를 위해 솔더 페이스트의 유무 및 두께에 따른 무연 솔더 접합부의 미세조직의 변화를 분석하였다. 본 실험에서는 Sn-3.0(Wt.%)Ag-0.5Cu 조성과 본 연구진에 의해 개발된 Sn-Ag-Cu-In 조성의 직경 $450{\mu}m$ 솔더 볼을 사용하였으며, 솔더 페이스트는 상용 Sn-3.0Ag-0.5Cu (ALPHA OM-325)를 사용하였다. 칩은 ENIG (Electroless nickel immersion gold) finish pad가 형성된 CSP (Chip scale package)를, 보드는 OSP (Organic solderability preservative)/Cu finish pad가 형성된 것을 사용하였다. 실험 방법은 보드를 솔더 페이스트 없이 플라즈마 처리 한 것, 솔더 페이스트를 $30{\mu}m$ 두께로 인쇄한 것, $120{\mu}m$의 두께로 인쇄한 것, 이렇게 3가지 조건으로 준비한 후, 솔더 볼이 bumping된 칩을 mounting하여, $242^{\circ}C$의 peak 온도 조건의 oven(1809UL, Heller)에서 reflow를 실시하여 패키지를 형성하였다. 이후 시편은 정밀 연마한 후, OM(Optical Microscopic)과 SEM(scanning electron microscope) 및 EDS(energy dispersive spectroscope)를 사용하여 솔더 접합부 IMC의 미세조직을 관찰, 분석하였다.

• 대한기계학회논문집
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• 제17권1호
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• pp.120-130
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• 1993

본 연구에서는 니켈의 가공시 나타나는 공구의 마멸에 대한 정량화 및 절삭변 수와의 연관성에 대한 연구는 그 자체가 마멸에 대한 데이터 베이스 측면에서 중요하 고, 이러한 접근방법으로는 연구가 거의 이루어지지 않았다는 측면에서도 큰 의미를 갖는다. 본 연구는 특히 경도가 큰 공구인 CBN, 소결 다이아몬드(poly crystal dia- mond 이하 PCD), 단결정 다이아몬드(single crystal diamond 이하 SCD)공구를 사용하 여 니켈의 절삭에서 나타나는 공구의 마멸에 대한 분석을 선행한 후 수집한 정보로부 터 절삭속도, 이송, 절삭깊이 및 공구의 nose반경이 공구의 마멸 및 표면의 성상(su- rface quality)에 미치는 영향에 대하여 고찰하였고 절삭조건의 변화에 따라 마멸에 대한 예상 곡선을 구하였다.

• 한국세라믹학회지
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• 제43권5호
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).