• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.946-951
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• 2000

In this paper, we showed the characteristic of transmission line with DCS (Defected Ground Structure), which is etched on the metallic ground plane. And we extracted the equivalent element value of DGS section. Effects of a lumped element placed on DGS section were investigated by employing DGS of dumbbell shape and parallel resonator with DGS. Chip type resistor, inductor, and capacitor were chosen as lumped elements for experiments. Experimental results show that the Q-factor and resonant frequency of the proposed DGS section can be controlled directly by using the external lumped element.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.101-106
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• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.31-35
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• 2022

Recently, with the 4th industrial revolution, the demand for high-density semiconductors for large-capacity data processing is increasing. Researchers are interested in researching the reliability of surface mount technology (SMT). In this study, the effect of PCB pad design on assembly and adhesion reliability of passive component was analyzed using design of experiment (DOE). The DOE method was established using the pad length, width, and distance between pads of the PCB as variables. The assembly defect rate of the passive element after the reflow process was derived according to the misplacement direction of the chip resistor. The shear force between the passive element and the PCB was measured using shear tests. In addition, the shape of the solder according to the pad design was analyzed through cross-sectional analysis.

• Journal of IKEEE
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• v.26 no.1
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• pp.36-42
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• 2022

This study presents an analysis of the human body channel as an electric signal path using body impulse response (BIR). The human body communications (HBC) has recently emerged as an effective signal transmission method to create wireless body area networks (WBAN). We provide body channel characteristics based on measured BIR in a proper experimental environment for the HBC using capacitive coupling with a customized channel sounding device, which can be applied as a guideline for the HBC system design. The frequency response of the BIR, extracted by a customized signal processing for the measure signals, shows the channel path loss (CPS) between 0 MHz and 100 MHz with an average CPS of approximately 46.8 dB. In addition, the relative noise power distributions can provide estimations on the signal to noise ratio at the HBC receiver in terms of capacitor and resistor values in the measured frequency band and the frequency band lower than 3 MHz considering the baseband signal detection.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.172-177
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• 2014

We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.203-211
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• 2013

UHF RFID tag designers usually ndde the chip impedance and read power sensitivity value obtained when a tag chip is mounted on a chip pad. The chip impedance, however, is not able to be supplied by chip manufacturer, since the chip impedance is varied according to tag designs and fabrication processes. Instead, the chip makers mostly supply the chip impedances measured on the bare dies. This study proposes a chip impedance and read power sensitivity evaluation method which requires a few simple auxiliary and some RF measuring equipment. As it is impractical to measure the chip impedance directly at mounted chip terminals, some form test fixture is employed and the effect of the fixture is modeled and de-embeded to determine the chip impedance and the read power sensitivity. Validity and accuracy of the proposed de-embed method are examined by using commercial RFID tag chips as well as a capacitor and a resistor the value of which are known.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Journal of IKEEE
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• v.20 no.2
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• pp.188-191
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• 2016

In this paper, we propose energy-efficient automatic power controller which can power on and off the signboard at the specified light intensity using the Illuminance Detector. By using segmented section Classification algorithm, light intensity setup system propose variable resistor method which makes users more easy to control. Automatic light on-off system set a standard by measured illuminance data. Measured light-intensity through the Illuminance Detector are communicated with the signboard power controller with wireless communication, and it controls lighting system. In this paper, we evaluated the Energy-Efficient Automatic Power Controller of The Signboard using illuminance detector. Experimental results in lightless environment shows that the error rate is less than 3% by Accredited Testing Laboratories.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.50-55
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• 2004

We fabricated and tested a resistive type superconducting fault current limiter (SFCL) of three-phase 6.6 $kV_{rms}/200 A_{rms}$ rating based on YBCO thin films grown on sapphire substrates with a diameter of 4 inches, Short circuit tests were carried out at a accredited test facility for single line-to- ground faults, phase-to-phase faults and three-phase faults, Each phase of the SFCL was composed of 8${\times}$6 elements connected in series and parallel respectively. Each element was designed to have the rated voltage of 600 $V_{rms}$. A NiCr shunt resistor of 23 Ω was connected to each element for simultaneous quenches. Firstly, single phase-to-ground fault tests were carried out. The SFCL successfully developed the impedance in the circuit within 0.12 msec after fault and controlled the fault current of 10 $kA_{rms} below 816 A_{peak}$ at the first half cycle. In addition, in case of phase-to-phase fault and three- phase fault test. simultaneous quenches among the SFCLs of the phases successfully accomplished. In conclusion. the SFCL showed excellent performance of current limitation upon fault and stable operation regardless of the amplitude of fault currents.