• Smart Media Journal
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• v.9 no.4
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• pp.102-108
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• 2020

In this paper, we propose a real-time method of detecting hand motions and extracting the signal frame induced by EF(Electric Field) sensors. The signal induced by hand motion includes not only noises caused by various environmental sources as well as sensor's physical placement, but also different initial off-set conditions. Thus, it has been considered as a challenging problem to detect the motion signal and extract the motion frame automatically in real-time. In this study, we remove the PLN(Power Line Noise) using LPF with 10Hz cut-off and successively apply MA(Moving Average) filter to obtain clean and smooth input motion signals. To sense a hand motion, we use two thresholds(positive and negative thresholds) with offset value to detect a starting as well as an ending moment of the motion. Using this approach, we can achieve the correct motion detection rate over 98%. Once the final motion frame is determined, the motion signals are normalized to be used in next process of classification or recognition stage such as LSTN deep neural networks. Our experiment and analysis show that our proposed methods produce better than 98% performance in correct motion detection rate as well as in frame-matching rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.22-26
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• 2012

This paper introduces a 2.5-Gb/s optical receiver implemented in a standard 1P4M 0.18um CMOS technology for the applications of active optical HDMI cables. The optical receiver consists of a differential transimpedance amplifier(TIA), a five-stage differential limiting amplifier(LA), and an output buffer. The TIA exploits the inverter input configuration with a resistive feedback for low noise and power consumption. It is cascaded by an additional differential amplifier and a DC-balanced buffer to facilitate the following LA design. The LA consists of five gain cells, an output buffer, and an offset cancellation circuit. The proposed optical receiver demonstrates $91dB{\Omega}$ transimpedance gain, 1.55 GHz bandwidth even with the large photodiode capacitance of 320 fF, 16 pA/sqrt(Hz) average noise current spectral density within the bandwidth (corresponding to the optical sensitivity of -21.6 dBm for $10^{-12}$ BER), and 40 mW power dissipation from a single 1.8-V supply. Test chips occupy the area of $1.35{\times}2.46mm^2$ including pads. The optically measured eye-diagrams confirms wide and clear eye-openings for 2.5-Gb/s operations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.53-60
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• 2005

This work proposes a 10b 100 MS/s $1.4\;mm^2$ CMOS ADC for low-power multimedia applications. The proposed two-step pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The wide-band SHA employs a gate-bootstrapping circuit to handle both single-ended and differential inputs with 1.2 Vp-p at 10b accuracy while the second-stage flash ADC employs open-loop offset sampling techniques to achieve 6b resolution. A 3-D fully symmetrical layout reduces the capacitor and device mismatch of the first-stage MDAC. The low-noise references are integrated on chip with optional off-chip voltage references. The prototype 10b ADC implemented in a 0.18 um CMOS shows the maximum measured DNL and INL of 0.59 LSB and 0.77 LSB, respectively. The ADC demonstrates the SNDR of 54 dB, the SFDR of 62 dB, and the power dissipation of 56 mW at 100 MS/s.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.2
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• pp.139-145
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• 2024

This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (K_vco) variation. To compensate conventional large K_vco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the K_vco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1982-1990
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• 1994

We implemented a PLDRO(Phase Locked Dielectric Resonator Oscillator) using the concept of the feedback property of PLL(Phase Locked Loop) for Ku-band(10.95-11.70 GHz). The conventional approaches to a PLDRO design use varactor diode tuning method.. But in theis paper, the PLDRO has the advantage of the frequency sensitivity to changes in the supple voltage of the oscillating device without the frequency-variable part by varactor diode voltage-control. and uses a SPD(Sampling Phase Detector) for phase-comparision. The PLDRO is composed of the DRO phase-locked to the reference signal of UHF band by using a SPD for high frequency stability and can be available for European FSS(Fixed Satellite Service) at 10.00GHz. The PLDRO generates the output power of 8.67 dBm at 10.00 GHz and has a phase noise of -81 dBc/Hz at 10 kHz offset from carrier. The hamonic and spurious characteristics have -42.33 dBc and -65dBc respectively. This PLDRO has much better frequency stability, lower phase noise, and more economical effect for a satellite system than conventional DRO.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.541-546
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• 2010

The push-push DRO(dielectric resonator oscillator) using a multi-layer structure of LTCC(low temperature co-fired ceramic) fabrication is designed. After the single DRO of series feedback type in the center frequency of 8GHz is designed, the push-push DRO in the center frequency of 16GHz including the Wilkinson power combiner is designed. The bias circuit affecting the size of oscillator are embedded in the intermediate layer of the LTCC multi-layer substrate. As a result, the large reduction in the size of VCO is obtained compared to the general oscillator on the single layer substrate. Experimental results show that the fundamental and third harmonics suppression are above 15dBc and 25dBc, respectively, and phase noise characteristics of the push-push DRO presents performance of -102dBc/Hz@100KHz and -128dBc/Hz@1MHz offset frequencies from carrier.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.88-90
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• 2012

This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.91-102
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• 2005

Recently, concurrent error detection for the processor becomes important. But it imposes too much overhead to adopt concurrent error detection capability on the system. In this paper, a new approach to resolve the problems of concurrent error detection is proposed. A loop detection scheme is introduced to reduce the repetitive loop iteration and memory access. To reduce the memory overheat an offset to calculate the target address of branching node is proposed. Performance evaluation shows that the new architecture has lower memory overhead and frequency of memory access than previous works. In addition, the new architecture provides the same error coverage and requires nearly constant memory size regardless of the size of the application program. Consequently, the proposed architecture can be used as an cost effective method to detect control flow errors in the commercial on the shelf products.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.74-80
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• 2006

This work presents a novel architecture of phase locked loop (PLL) with the current compensating scheme to improve phase noise performance. The proposed PLL has two Charge Pump (CP), main-CP (MCP) and sub-CP (SCP). The smaller SCP current with same time duration but opposite direction of UP/DN MCP current is injected to the loop filter (LF). It suppress the voltage fluctuation of LF. In result, it improves phase noise characteristic. The Proposed PLL has been fabricated with 0.35fm 3.3V CMOS process. Measured phase noise at 1-MHz offset is -103dBc/Hz resulting in a minimum 3dBc/Hz phase noise improvement compared to the conventional PLL.

• Journal of IKEEE
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• v.15 no.1
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• pp.29-36
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• 2011

Dithering scheme has been widely used to improve the resolution of DCO(Digitally Controlled Oscillator) in conventional ADPLLs(All Digital Phase Locked Loop). In this paper a new resolution improvement scheme is proposed where a simple DAC is employed to overcome the problems of dithering scheme. A 2.4GHz LC-based DCO has been designed in a $0.13{\mu}m$ CMOS process with an enhanced frequency resolution for wireless local area network applications. It has a frequency tuning range of 900MHz and a resolution of 58.8Hz. The frequencies are controled by varactors in coarse, fine, and DAC bank. The DAC bank consists of an inversion mode NMOS varactor. The other varactor banks consist of PMOS varactors. Each varactor bank is controlled by 8bit digital signal. The designed DCO exhibits a phase noise of -123.8dBc/Hz at 1MHz frequency offset. The DCO core consumes 4.2mA from 1.2V supply.