• Title/Summary/Keyword: octadecyltrichlorosilane(OTS)

Search Result 43, Processing Time 0.029 seconds

An Experimental Study on the Micro-adhesion of Octadecyltrichlorosilane SAM on the Si Surface (OTS SAM의 미소 응착 특성에 관한 실험적 연구)

  • 윤의성;박지현;양승호;한흥구;공호성
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
    • /
    • 2000.11a
    • /
    • pp.341-346
    • /
    • 2000
  • The effect of OTS(octadecyltrichlorosilane) SAM(self-assembled monolayer) on the micro-adhesion has been studied. OTS SAM was formed on the Si(100) surface and SPM (scanning probe microscope) tips with different radius of curvature were fabricated by a series of masking and etching processes. Pull-off forces of different tips on Si and OTS SAM surfaces were measured by SPM in different relative humidities. The surface of OTS SAM was changed to hydrophobic surface and the micro-adhesion force of OTS SAM was lower than that of pure Si. As the tip radius of curvature and the relative humidity increased. the micro-adhesion force increased. Based on the test results. the main parameter affected to the micro-adhesion was absorbed humidity on the surface.

  • PDF

Growth and Energy Level Alignment of Pentacene on SiO2 Surfaces before and after OTS Treatment (OTS처리 전후 실리콘산화막 위에서 펜타신의 성장과 에너지준위의 정렬)

  • Kim, J.W.;Lee, Y.M.;Park, Y.
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.5
    • /
    • pp.394-399
    • /
    • 2008
  • Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.

Effect of dipole electric field on low-voltage pentacene thin film transistors

  • Kim, Kang-Dae;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08b
    • /
    • pp.1636-1638
    • /
    • 2007
  • We report on low-voltage pentacene TFTs with a Al2O3/OTS as a gate dielectric. Improving device characteristics, we performed chemical modification of self-grown Al2O3 surface with an octadecyltrichlorosilane(OTS) self-assembled monolayer(SAM). As the result of this combination, the mobility was improved from 0.3 to $0.45\;cm^2/Vs$. In addition, we examined that the SAM dipole electric field have an influence on gate leakage current, transfer and output characteristics.

  • PDF

Self Assembled Patterns of Ag Using Hydrophobic and Hydrophilic Surface Characteristics of Glass (유리기판의 친수.소수 상태 변화를 이용한 자기정렬 Ag Pattern 형성 연구)

  • Choo Byoung-Kwon;Choi Jung-Su;Kim Gun-Jeong;Lee Sun-Hee;Park Kyu-Cang;Jang Jin
    • Journal of the Korean Vacuum Society
    • /
    • v.15 no.4
    • /
    • pp.354-359
    • /
    • 2006
  • Recently, the interest in lithography without photo exposure has been increased compare to the conventional photolithography in nano meter and micrometer size patterning area. We studied a self aligned dipping of Ag solution through micro contact printing (${\mu}-CP$) with octadecyltrichlorosilane (OTS) treated polydimethylsiloxane (PDMS) soft mold. The OTS monolayer on the patterned PDMS was formed by dipping it into OTS solution. We transferred the OTS monolayer from PDMS mold to the glass. The OTS monolayer changed the surface energy from hydrophilic surface to hydrophobic surface, And then we made self aligned Ag solution patterns just after dipping the substrate, using adhesion difference of Ag solution between OTS treated hydrophobic area and non-OTS treated hydrophilic area. We finally get the Ag patterns through only dip-coating after the ${\mu}-CP$ process. And we observed surface energies on the glass substrate through the contact angle measurements as time goes on.

An Experimental Study on the Nano-adhesion of Octadecyltrichlorosilane SAM on the Si Surface (OTS SAM의 미소 응착 특성에 관한 실험적 연구)

  • 윤의성;박지현;양승호;한흥구;공호성
    • Tribology and Lubricants
    • /
    • v.17 no.4
    • /
    • pp.276-282
    • /
    • 2001
  • Nano adhesion between SPM (scanning probe microscope) tips and 075 (octadecyltrichlorosilane) SAM (self-assembled monolayer) was experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various conditions of relative humidity. OTS SAM was formed on Si-wafer (100) surfaces, and Si$_3$N$_4$ tips of different radius of curvature were used. When the surface was hydrophobic, the adhesion and friction forces were found lower than those of bare Si-wafer. Results also showed that micro-adhesion force increased as the relative humidity and the tip radius of curvature increased. The main parameter for affecting the micro-adhesion was found absorbed humidity on the contact surface. These results were discussed with the JKR model and a capillary force caused by absorbed water.

Contrallable P-type method for WSe2 using Octadecyltrichlorosilane (OTS) (Octadecyltrichlorosilane (OTS)을 사용한 WSe2의 농도조절이 가능한 P형 도핑 방법)

  • Kim, Jin-Ok;Gang, Dong-Ho;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.193.2-193.2
    • /
    • 2015
  • 최근 3차원 반도체의 물질적인 한계를 극복하기 위해 2차원 전이금속 칼코게나이드(TMD)에 대한 연구가 활발히 진행되고 있다. 하지만 TMD 물질의 도핑 방법에 대한 수많은 연구에도 불구하고 대부분이 n채널 물질인 MoS2에 대한 것에 국한되어 있다. 게다가 이전의 TMD 도핑 기술 연구 결과는 채널이 도체화 될 정도의 매우 높은 농도의 도핑 현상만을 보여주었다. 이 연구에서 우리는 WSe2로 만든 p형 채널 트랜지스터에서 Octaecyltrichlorosilane(OTS)층의 농도 조절로 제어가 가능한 약한 농도의 p형 도핑기술을 보여준다. 이 p형 도핑 현상은 OTS의 메틸기(-CH3)그룹에 의한 양성 쌍극자모멘트가 WSe2내의 전자 농도를 낮추는데서 기인한다. 제어가 가능한 p형 도핑은 $2.1{\times}10^{11}cm^{-2}$ 사이에서 $5.2{\times}10^{11}cm^{-2}$로 degenerate되지 않은 정도로 WSe2 기반의 광, 전기적인 소자에서 적절한 농도로 최적화 될 수 있다. (도핑 정도에 따른 문턱전압 상승, 전류 on/off율 상승, 전계효과 이동도 상승, 광응답성 하락, 광검출성 하락) 또한 OTS에서 비롯한 p도핑 효과는 대기중에서 오랜시간이 지나도 작은 성능 변화만을 보여주며(60시간 후 18~34% 문턱전압 감소변화량) $120^{\circ}C$의 열처리를 통하여 저하된 성능이 거의 완벽하게 회복된다. 이 연구는 Raman 분광법과 전기적, 광학적 측정을 통하여 분석되었으며 OTS 도핑현상이 WSe2 박막의 두께와 무관함 또한 확인했다.

  • PDF

Surface Characteristics of Silicon Substrates Coated with Octadecyltrichlorosilane (옥타데실트리클로로실란 코팅에 의한 실리콘 표면 특성 변화)

  • 유희재;김수경;김진홍;강호종
    • Polymer(Korea)
    • /
    • v.27 no.6
    • /
    • pp.555-561
    • /
    • 2003
  • The self-assembled monolayer coating of octadecyltrichlorosilane (OTS) on the silicon based MEMS was investigated and surface characteristics were considered as a function of coating conditions and reagent composition. The sulfuric peroxide mixture (SPM) solution was used to form -OH group which caused the hydrophilic characteristic on silicon surftce. Highest hydrophilicity was obtained by SPM solution with 85% acid content at room temperature. OTS was applied on the silicon surface by means of self-assembled monolayers (SAMs) coating. It was found that sol-gel reaction was took place between -OH group on the silicon surface and -Cl group in OTS. As a result, the contact angle increased due to the increase of hydrophobicity by Si-O bonding of SAMs. Sol-gel reaction could be controlled by coating conditions as well as reagent composition in OTS coating solution.

Programmed APTES and OTS Patterns for the Multi-Channel FET of Single-Walled Carbon Nanotubes (SWCNT 다중채널 FET용 표면 프로그램된 APTES와 OTS 패턴을 이용한 공정에 대한 연구)

  • Kim, Byung-Cheul;Kim, Joo-Yeon;An, Ho-Myoung
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.8 no.1
    • /
    • pp.37-44
    • /
    • 2015
  • In this paper, we have investigated a selective assembly method of single-walled carbon nanotubes (SWCNTs) on a silicon substrate using only photolithographic process and then proposed a fabrication method of field effect transistors (FETs) using SWCNT-based patterns. The aminopropylethoxysilane (APTES) patterns, which are formed for positively charged surface molecular patterns, are utilized to assemble and align millions of SWCNTs and we can more effectively assemble on a silicon (Si) surface using this method than assembly processes using only the 1-octadecyltrichlorosilane (OTS). We investigated a selective assembly method of SWCNTs on a Si surface using surface-programmed APTES and OTS patterns and then a fabrication method of FETs. photoresist(PR) patterns were made using photolithographic process on the silicon dioxide (SiO2) grown Si substrate and the substrate was placed in the OTS solution (1:500 v/v in anhydrous hexane) to cover the bare SiO2 regions. After removing the PR, the substrate was placed in APTES solution to backfill the remaining SiO2 area. This surface-programmed substrate was placed into a SWCNT solution dispersed in dichlorobenzene. SWCNTs were attracted toward the positively charged molecular regions, and aligned along the APTES patterns. On the contrary, SWCNT were not assembled on the OTS patterns. In this process, positively charged surface molecular patterns are utilized to direct the assembly of negatively charged SWCNT on SiO2. As a result, the selectively assembled SWCNT channels can be obtained between two electrodes(source and drain electrodes). Finally, we can successfully fabricate SWCNT-based multi-channel FETs by using our self-assembled monolayer method.

A Study on the Leakage Current Voltage of Hybrid Type Thin Films Using a Dilute OTS Solution

  • Kim Hong-Bae;Oh Teresa
    • Journal of the Semiconductor & Display Technology
    • /
    • v.5 no.1 s.14
    • /
    • pp.21-25
    • /
    • 2006
  • To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

  • PDF

Tribological Characteristics of FDTS & OTS SAM according to Annealing Temperature (FDTS와 OTS SAM의 어닐링 온도에 따른 트라이볼로지 특성)

  • 양지철;김대은
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.20 no.1
    • /
    • pp.240-247
    • /
    • 2003
  • The tribological characteristics of FDTS (1H, 1H, 2H, 2H-Perflurodecyltrichlorosilane) SAM (self-assembled monolayer) and OTS (octadecyltrichlorosilane) SAM treated by high temperature annealing have been investigated from the viewpoint of stiction, adhesion and friction in micro/nano scale. From the experimental results, it was found that OTS SAM gets destroyed at 20$0^{\circ}C$ and stiction, adhesion and friction coefficient increased, but FDTS SAM was stable up to 40$0^{\circ}C$. Also, it was found that the friction coefficient of normal OTS SAM below 20$0^{\circ}C$ is lower than that of FDTS SAM in micro/nano scale, but stiction and adhesion is vice versa. This work shows the importance of surface group of self-assembled monolayer in dictating the tribological characteristics and thermal stability.