• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1464-1469
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• 2004

In this study, micro square heaters having dimensions of $65{\times}65{\mu}m^2$and $100{\times}100{\mu}m^2$ were fabricated and bubble nucleation experiments on the heaters were performed. Bubble nucleation temperature was also measured using a bridge circuit and the photographs of bubble nucleation and subsequent growth were taken by a camera with a flash unit. Measured bubble nucleation temperatures were found to be closer to the superheat limit of working fluid (FC-72). Also quasi-1D analyses for the square heaters were performed. The quasi-1D analysis yielded proper temperature distribution of the square heater at steady state, however failed to predict the temperature rise up to the steady state. Similar time dependent temperature can be obtained with proper value of thermal diffusivity. For the $100{\times}100{\mu}m^2$ square heater, nucleation of several bubbles was observed while only one bubble was observed to be nucleated on $65{\times}65{\mu}m^2$ heater.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.636-644
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• 1997

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.221-225
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• 1996

In diamond synthesis by metal film growth method under high pressure and high temperature, the nucleation and growth of diamond was observed dependent on the carbon source variation from graphite powder to the heat treated powders of lamp black carbon. At the low driving force condition near equilibrium pressure and temperature line, nucleation of diamond did not occur but growth of seed diamond appeared in the synthesis from lamp black carbon while both nucleation and growth of diamond took place in the synthesis from graphite. Growth morphology change of diamond occurred from cubo-octahedron to octahedron in the synthesis from graphite but very irregular growth of seed diamond occurred in the synthesis from lamp block carbon. Lamp black carbon transformed to recrystallized graphite first and very nucleation of diamond was observed on the recrystallized graphite surface. Growth morphology of diamond on the recrystallized graphite was clear cubo-octahedron even at higher pressure departure condition from equilibrium pressure and temperature line.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• Journal of Mechanical Science and Technology
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• v.18 no.8
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• pp.1271-1287
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• 2004

In this article, vapor bubble nucleation in liquid and the evaporation process of a liquid droplet at its superheat limit were discussed from the viewpoint of molecular clustering (molecular cluster model for bubble nucleation). For the vapor bubble formation, the energy barrier against bubble nucleation was estimated by the molecular interaction due to the London dispersion force. Bubble nucleation by quantum tunneling in liquid helium under negative pressure near the absolute zero temperature and bubble nucleation on cavity free micro heaters were also presented as the homogenous nucleation processes.

• Journal of Electrochemical Science and Technology
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• v.11 no.3
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• pp.291-309
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• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.392-397
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• 2000

Mono-disperse particles generated by a condensation particle generator are widely used to meet the experimental and industrial needs. The characteristics of particles generated by homogeneous nucleation have been studied experimentally using a laminar flow condensation particle generator. Dry nitrogen gas saturated with oleic acid vapor was cooled well below the saturation temperature causing the highly supersaturated vapor to nucleate. The dependence of GSD(Geometric Standard Deviation), GMD(Geometric Mean Diameter), and the mass concentration of particles on the temperature at the evaporator, flow rate and the temperature condition at condenser was studied. The experimental results show that the mass concentration of particles is affected by the radial temperature profile at condenser. Nucleation at the center of the condenser causes the mass concentration of particles to increase. The experimental results also show that the suppression of additional nucleation by a constant temperature condition at the condenser increases the mean diameter of particle.

• Food Science of Animal Resources
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• v.39 no.6
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• pp.1008-1014
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• 2019

This study investigated the effects of pressure-mediated protein changes on the ice nucleation temperature of pork loins. To variate chemical state of meat proteins, pork loin was pressurized at varying pressure levels (100-500 MPa) for 3 min, and moisture content, expressible moisture (EM) and differential scanning calorimetry (DSC) were analyzed. Although, all treatments showed similar moisture content, EM and degree of protein unfolding of pork loin showed different features as of 300 MPa. At moderate pressure treatments (100-200 MPa), all protein fractions were detected in DSC experiments, and pork loin had lower EM than control (p<0.05). Meanwhile, myosin and actin of pork loin treated at greater than 300 MPa were completely unfolded, and the treatments showed high EM compared to control (p<0.05). Unfolding of meat proteins was a factor suppressing ice nucleation, and the ice nucleation temperature tended to decrease with increasing applied pressure level. The ice nucleation characteristics of pressurized pork loin exhibited a potential application in freezing storage of pressurized meat with less tissue damage comparing to freeze fresh meat, and further exploration regarding the quality change after freezing of fresh and pressurized meat was warranted.