Characteristic of $TiO_2$ Thin Film for Nonvolatile Memory Device's Gate-Blocking Layer
(비휘발성 메모리 소자의 Gate-Blocking Layer 적용을 위한 $TiO_2$ 박막 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2007.11a
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- pp.199-200
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- 2007