• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.82-85
• /
• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.149-150
• /
• 2007

ONO(Oxide-Nitride-Oxide)구조는 기억소자의 전하보유 능력을 향상시키기 위해 도입된 게이트 절연막이다. 본 연구에서는 ELA(Excimer Laser Annealing)방법으로 비정질 실리콘을 결정화 시켜서 그 위에 NVM(Nonvolatile Memory)소자를 만들어 전기적 특성을 측정하여 결과를 나타내었다. 실험 결과 같은 크기의 $V_D$에서 $V_G$를 조절함으로써 $I_D$의 크기를 조절할 수 있었다. $V_G-I_D$ Graph에서는 $I_{on}$과 $I_{off}$, 그리고 Threshold Voltage를 알 수 있었다. $I_{on}/I_{off}$ Ratio는 $10^3-10^4$이다. $V_G-I_D$ Graph에서는 게이트에 인가하는 Bias의 양을 통해서 Threshold Voltage의 크기를 조절할 수 있었다. 이는 Trap되는 Charge의 양을 임의로 조절할 수 있다는 것을 의미하며, 이러한 Programming과 Erasing의 특성을 이용하여 기억소자로서의 역할을 수행하게 된다.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1265-1267
• /
• 1993

The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.15-16
• /
• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a new material of PRAM with $Ge_1Se_1Te_2$. This material has been propose to solve the high energy consumption and high programming current. We have investigated the phase transition behaviors in function of various process factor including contact size, cell size, and annealing time. As a result, we have observed that programming voltage and writing current of $Ge_1Se_1Te_2$ are more improved than $Ge_2Sb_2Te_5$ material.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.22 no.4
• /
• pp.536-544
• /
• 2019

During the assembly and function inspection of missile system, flight simulation process is required. In the conventional flight simulation check of missiles, an inertial navigation system simulator was used to transmit the navigation output data acquired in HILS. There are several disadvantages in terms of check configuration complexity and data synchronization when using the simulator. So we proposed a new flight simulation method that utilizes the nonvolatile built-in memory of the aviation control unit. The data processing procedure and operation procedure of the proposed method for type I and type II missiles are presented. And we analyzed the causes of the difference between proposed method result and the HILS result for type II missile. By comparing the results obtained by the experiments using the proposed method with the results of HILS, the validity of proposed method was confirmed.

• Journal of the Korean Wood Science and Technology
• /
• v.49 no.2
• /
• pp.169-180
• /
• 2021

Inherent crystalline domains present in low formaldehyde to urea (F/U) molar ratio urea-formaldehyde (UF) resins are responsible for their poor adhesion in wood-based composite panels. To modify the crystallinity of low molar ratio (LMR) UF resins, this study investigates the additional effect of cellulose nanomaterials (CNMs), such as cellulose microfibrils (CMFs), cellulose nanofibrils (CNFs), and TEMPO-oxidized CNFs (TEMPO-CNFs) on the crystallinity of modified LMR UF resins. First, two modification methods (post-mixing and in situ) were compared for modified LMR UF resins with TEMPO-CNFs. The modified UF resins with TEMPO-CNFs decreased the nonvolatile solid contents, while increasing the viscosity and gel time. However, the in situ modification of UF resins with TEMPO-CNFs showed lower crystallinity than that of post-mixing. Then, the in situ method was compared for all CNMs to modify LMR UF resins. The modified UF resins with CMFs using the in situ method increased nonvolatile solid contents and viscosity but decreased the gel time. The crystallinity of UF resins modified with TEMPO-CNFs was the lowest even though the crystalline domains were not significantly changed for all modified UF resins. These results suggest that these CNMs should be modified to prevent the formation of crystalline domains in LMR UF resins.

• Polymer(Korea)
• /
• v.25 no.1
• /
• pp.142-150
• /
• 2001

Until now rubber industry field has used organic solvent base adhesive, there was always existed a fire risk, variety of quality and harmfulness of human body. To solve this problem we were developed a new adhesive that was maked by raw materials of hydrocarbon series which has the properties of nonvolatile and high flash point. Because of this new adhesive has the properties of nonvolatile and non-harmfulness to the human body, we expected to solve the problems of a fire hazard and the pollution of the environmental. Instead of the rubber binder that is used to a present adhesive, the new idea is adopted in a new type of adhesive. Nonvolatile solvent penetrated to the rubber surface and caused the swelling in rubber surface and as a result of this action, it has the self-adhesive power. In comparision with the present adhesive a new type of adhesive remarkably improved the maintenance time of adhesion and the durability of this adhesive showed similar aspect. Because it did not exhibit a drop of physical properties of rubber which was caused by swelling effect, we estimate that new type adhesive are very stable and not reacted to several rubber additives. While present adhesive appear the crack at cutting surface of curing rubber that caused by gas, new type adhesive not exist these crack.

• Korean Journal of Food Science and Technology
• /
• v.20 no.3
• /
• pp.293-302
• /
• 1988

This study was performed to identify detailed informations on the nonvolatile flavor of Chinese quince fruits, Chaenomeles sinensis koehne. About 72% of the free amino acids were shown to be valine, asparagine, ${\gamma}-aminobutyric\;acid$, aspartic acid and serine. Arginine, tyrosine, methionine and tryptophan were not present. Glutamic acid and glutamine as a amino acid for peptides were the major components, whereas cysteic acid, methionine sulfone and tryptophan were not detected. The nucleotides attained were composed of cytosine, uridine-5'-monophosphate and cytidine-5'-monophosphate, and these were proved to be a very small quantity. Guanosine-5'-monophosphate, inosine-5'-monophosphate and adenosine-5'-monophosphate were not present. The major sugars were shown to be glucose, sorbose, sucrose and fructose. Fructose was the most abundant one among them. A total of 11 organic acids were identified by capillary gas chromatography and capillary gas chromatography-mass spectrometry. The major components identified were tartaric acid and α-ketoglutaric acid. The total content of vitamin C determined was 386.6mg%, and those of ascorbic, dehydroascorbic, and 2, 3-diketo-L-gulonic acid were 28.8mg%, 154.5mg% and 197.3mg%, respectively. Calcium and phosphorus were the major components, while heavy metals such as cadmium, copper and lead were determined to be a small amount. In the result of organoleptic test on the natural and synthetic extract of Chinese quince fruits, the principal taste components consisted of free amino acids, sugars, organic acids, vitamin C and minerals. Five groups mentioned would have a favorable influence upon the taste of fresh Chinese quince fruits.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.609-614
• /
• 2014

The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.02a
• /
• pp.149-149
• /
• 2007