• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.33-40
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• 1984

To find out the optimum heating profile for the nitridation of compacts of graded silicon grains (max 53$mu extrm{m}$) two batches with the addition of MgO and $Mg(NO_3)_3$$cdot$$6H_2O$ to silicon particles were isostatically pressed into compacts. They were nitrided under some different nitriding schedules. The properties such as bulk densitis microstructures and formed phases were measured and observed. The following results were obtained ; 1) About 10% unreacted silicon remained in specimen which was nitrided at 1, 350$^{\circ}C$ for 240hrs. 2) One of the step-heating processes 1, 150$^{\circ}C$-1, 390$^{\circ}C$ for 65hrs are then $1, 390^{\circ}C$for 50hrs was the low temperature but with that at high temperature. 3) High pressure(10.5kgf/$cm^2$) of nitrogen at 1, 390$^{\circ}C$ accelerated the $\alpha$$ ightarrow$$\beta$ transformation of silicon nitride. 4) Magnesium nitrate was superior to magnesium oxide in the role of nitriding aid and the formation of uniform microstructures.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.435-440
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• 2015

It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.5
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• pp.223-228
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• 2017

Aluminum nitride (AlN) powder was successfully synthesized at low temperature via carbothermal reduction and nitridation (CRN) assisted by microwave heating. The synthesis processes of AlN powder were investigated with X-ray diffraction, FE-SEM, FT-IR and TGA/DSC. Aluminum nitrate was used as an oxidizer and aluminum source, urea as fuel, and glucose as carbon source. These starting materials were mixed with D.I water and reacted in a flask at $100^{\circ}C$ for 20 minutes. After the reaction was finished, black foamy intermediate product was formed, which was considered to be an amorphous $Al_2O_3$ particles through intermediate product obtained by solution combustion synthesis (SCS) at the results of X-ray diffraction patterns and FT-IR. This intermediate product was nitridated at temperatures of $1300^{\circ}C$ and $1400^{\circ}C$ in $N_2$ atmosphere by a microwave heating furnace and then decarbonated at $600^{\circ}C$ for 2 hours in air. It should be noticed from FE-SEM images that as nitridated particles, identified as AlN from X-ray diffraction patterns, are covered with carbon residues. After decarbonating the nitridated powders, the spherical pure AlN powders were obtained without alumina and their particle sizes were dependent on the nitridating temperature with high temperature of $1400^{\circ}C$ giving large particles of around 70~100 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.441-446
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• 2017

Aluminum nitride fibers were synthesized by carbothermal reduction and nitridation of precursor fibers obtained by electrospinning. The starting materials used to synthesize the AlN fibers were $Al(NO_3)_3{\cdot}9H_2O$ and urea. Polyvinylpyrrolidone with increasing viscidity was used as the carbon source to obtain a composite solution. The mixed solution was drawn into a plastic syringe with a stainless steel needle, which was used as the spinneret and connected to a 20 kV power supply. A high voltage was supplied to the solution to facilitate the formation of a dense net of fibers on the collector. The precursor fibers were dried at $100^{\circ}C$ and then heated to $1,400^{\circ}C$ for 1 h in a microwave furnace under $N_2$ gas flow for the carbothermal reduction and nitridation. X-ray diffraction studies indicated that the synthesized fibers consisted of the AlN phase. Field emission scanning electron microscopy studies indicated that the diameter of the calcined fibers was approximately 100 nm.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.5
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• pp.473-478
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• 2016

In this paper, the MIS(: Metal-Insulator-Semiconductor) Capacitor with the nitrided-oxide by RTP are fabricated to investigate the carrier trap parameters due to avalanche electron injection. Two times turn-around phenomenon of the flatband voltage shift generated by the avalanche injection are observed. This shows that electron trapping occurs in the oxide film at the first stage. As the electron injection increases, the first turn-around occures due to a positive charge in the oxide layer. After further injection, the curves turns around once again by electron captured. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitting with experimental data in order to determine trap parameter of nitrided-oxide.

• Journal of the Korean Applied Science and Technology
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• v.20 no.4
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• pp.358-365
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• 2003

Zirconium nitride powders were synthesized at a relatively lower temperature using methane as a reducing agent in the nitridation of zircoia. $ZrO_2$ powder was prepared by a sol-gel technique. The resulting sol-gel was centrifuged, and the gel was washed with deionized water. Anhydrous ammonia was used as the nitrogen source and methane was used as the reducing agent. Conversion diagrams show the equilibrium solid phase as a function of reagent concentrations for a specific temperature and gas pressure for the reagent system $NH_3-ZrO_2-CH_4$. The reagent concentration ranges within which pure ZrN is formed increase with increasing reaction temperature. Low pressure with an excess of hydrogen decreases the reaction temperature at which pure ZrN is formed. Low pressure together with the introduction of excess hydrogen into the reaction system increases Zr and N conversion efficiency and retards C deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.150-155
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• 2004

This study attempts to form a TiN barrier layer against Cu diffusion by the easier and more convenient method. In this new approach, Ti was sputter-deposited, and nitrided by heat-treating in the NH$_3$ambient. Sheet resistance of as-deposited Ti was 20 Ω/$\square$, but increased to 195 Ω/$\square$ after the heat-treatment at 30$0^{\circ}C$, and lowered to 120 Ω/$\square$ after the heat-treatment at 50$0^{\circ}C$, and $600^{\circ}C$. AES results for these thin films confirmed that the atomic ratio of Ti and N was close to 1:1 at or above 40$0^{\circ}C$ heat-treatment. However, it was also found that excessive oxygen was contained in the TiN layer. To examine the barrier property against Cu diffusion, 100nm Cu was deposited on the TiN layer and then annealed at 40$0^{\circ}C$ for 40 min.. Cu remained at the surface without diffusing into the Si layer.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1649-1655
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• 1988

Thermally growon SiO2 films were thermally nitrided in a hot-wall furnace and in a RF-heated cold-wall reactor and their characteristics were investigated by the AES and the C-V dmeasurements. The Auger depth profile show that 200\ulcornerSiO2 film nitrided at 1200\ulcorner, for 2hrs by the hot-wall process has a nitrogen-rich layer near the SiOxNy-Si interface. However the nitrogen-ri h layer is not observed in the case of cold-wall process. The maximum flat-band voltage for the SiO2 films nitrided by the hot-wall process is higher than by the cold-wall process, and the peak value of flat-band voltage for the hot-wall process appears the longer nitridation time than that for the cold-wall process. The SiOxNy-Si interface shift toward the Si substrate for the case of the hot-wall process is larger than that for the cold-wall process.

• Journal of the Korean Chemical Society
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• v.32 no.3
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• pp.267-275
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• 1988

Fine powders of amorphous $Al_2O_3,\;SiO_2,\;Al_2O_3-SiO_2$ system were prepared by hydrolysis of solutions containing alkoxides, aluminium tri-isopropoxide and silicon tetra-ethoxide. High purity ultrafine ${\beta}-sialon$ powders were prepared by the carbothermal reduction-nitridation of amorphous $Al_2O_3-SiO_2$ powders mixed with carbon black as a reducing agent. In the hydrolysis step the effect of the factors such as pH, reaction temperature and amount of water on the conversion rate of alkoxides to oxides was investigated. In the carbothermal reduction-nitridation the reaction path was assumed by the analysis of intermediates formed in the process of ${\beta}-sialon$ synthesis and the reaction kinetics of ${\beta}-sialon$ formation was considered.