• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.123-132
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• 1995

While a nickel mesh and an expanded nickel sheet are used as current collectors for supporting active anode materials in rechargeable batteries, a porous nickel substrate is studied extensively for its 3-dimensional structure which has high capabilities for active materials and current collection. Optimum plating conditions were studied by polarization measurement. Scanning Electron Microscopy (SEM) showed that both electroless-and electro-plated nickel on an urethane substrate were highly porous and consisted of nearly spherical pores. The diameter and the channel size of the pores were found to be 300~500 $\mu\textrm{m}$ and 50~200$\mu\textrm{m}$, respectively. The shape of skeleton resembled a triangular prism with length extending about 50~100 $\mu\textrm{m}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.109-109
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• 2000

Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.473-474
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• 2006

Aligned carbon nanotubes(CNTs) array were synthesized using direct current plasma-enhanced chemical vapor deposition. The nickel microgrids catalyzed the growth of carbon nanotubes which take on the area of the nickel microgrids. Selective growth of areas of nanotubes was achieved by patterning the nickel film. CNTs were grown on the pretreated substrates at 30% $C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters about 20 nanometers and lengths approximately 720 nanometers were obtained. Morphologies of carbon nanotubes were observed by FE-SEM and TEM.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.441-442
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• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.276.2-276.2
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• 2016

Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from external circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of $90-200^{\circ}C$-could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.2
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• pp.215-222
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• 2004

Synthesis of multi-walled carbon nanotubes on a nickel-nitrate-deposited substrate using an ethylene fueled inverse diffusion flame was illustrated. The deposition of nickel-nitrate particles on substrates was used for the smaller-diameter nanotubes than those formed in our previous studies. Also the effect of temperature variations on the size of formed nanotubes was investigated. The diameters of formed multi-walled carbon nanotubes were ranging from 15 to 100 nm in the several radial locations. In case of using a nickel-nitrate-deposited substrate, the smaller-diameter carbon nanotubes were synthesized than those in case of using the substrate with melted nickel-nitrate. In the formation region of carbon nanotubes, the diameter of formed nanotubes was tend to be decrease as the radial distance form the flame center was increased, that is the decreased substrate temperature.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.124-132
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• 2021

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.