• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.10 s.241
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• pp.1298-1306
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• 2005

In this paper, Part II, we realized the Serpentine Laminating Micromirer (SLM) which was proposed in the accompanying paper, Part I, by means of the injection molding process in mass production. In the SLM, the higher level of chaotic mixing can be achieved by combining two general chaotic mixing mechanisms of splitting/recombination and chaotic advection by the successive arrangement of 'F'-shape mixing units in two layers. Mold inserts for the injection molding process of the SLM were fabricated by SU-8 photolithography and nickel electroplating. The SLM was realized by injection molding of COC (cyclic olefin copolymer) with the fabricated mold inserts and thermal bonding of two injection molded COC substrates. To compare the mixing performance, a T-type micromixer was also fabricated. Mixing performances of micromixers were experimentally characterized in terms of an average mixing color intensity of a pH indicator, phenolphthalein. Experimental results show that the SLM has much better mixing performance than the I-type micromixer and chaotic mixing was successfully achieved from the SLM over the wide range of Reynolds number (Re). The chaotic micromixer, SLM proposed in this study, could be easily integrated in Micro-Total-Analysis- System , Lab-on-a-Chip and so on.

• Journal of Microbiology and Biotechnology
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• v.20 no.12
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• pp.1653-1663
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• 2010

The first gene (${\alpha}$-gal1) encoding an extracellular ${\alpha}$-Dgalactosidase from the thermophilic fungus Talaromyces emersonii was cloned and characterized. The ${\alpha}$-gal1 gene consisted of an open reading frame of 1,792 base pairs interrupted by six introns that encoded a mature protein of 452 amino acids, including a 24 amino acid secretory signal sequence. The translated protein had highest identity with other fungal ${\alpha}$-galactosidases belonging to glycosyl hydrolase family 27. The ${\alpha}$-gal1 gene was overexpressed as a secretory protein with an N-terminal histidine tag in the methylotrophic yeast Pichia pastoris. Recombinant ${\alpha}$-Gal1 was secreted into the culture medium as a monomeric glycoprotein with a maximal yield of 10.75 mg/l and purified to homogeneity using Hisbinding nickel-agarose affinity chromatography. The purified enzyme was maximally active at $70^{\circ}C$, pH 4.5, and lost no activity over 10 days at $50^{\circ}C$. ${\alpha}$-Gal1 followed Michaelis-Menten kinetics ($V_{max}\;of\;240.3{\mu}M/min/mg,\;K_m\;of\;0.294 mM$) and was inhibited competitively by galactose ($K_m{^{obs}}$ of 0.57 mM, $K_i$ of 2.77 mM). The recombinant T. emersonii ${\alpha}$-galactosidase displayed broad substrate preference, being active on both oligo- and polymeric substrates, yet had strict specificity for the ${\alpha}$-galactosidic linkage. Owing to its substrate preference and noteworthy stability, ${\alpha}$-Gal1 is of particular interest for possible biotechnological applications involving the processing of plant materials.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.195-199
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• 2011

ITO thin films and gold (Au), copper (Cu) and nickel (Ni) intermediate ITO multilayer (ITO/Au/ITO, ITO/Cu/ITO, ITO/Ni/ITO) films were deposited on glass substrates with a reactive radio frequency and direct current magnetron sputtering system and then the effect of intermediate metal layer and annealing temperature on the methanol gas sensitivity of ITO films were investigated. Although both ITO and ITO/metal/ITO (IMI) film sensors have the same total thickness of 100 nm, IMI sensors have a sandwich structure of ITO 50 nm/metal 10 nm/ITO 40 nm. The change in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm was measured at room temperature. The IAI film sensors showed the higher sensitivity than the other sensors. Finally, it is concluded that the ITO 50/Au 10/ITO 40 nm film sensors hasthe potential to be used as improved methanol gas sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.589-593
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• 2005

Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.133-140
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• 2010

10 nm thick Ni layers were deposited on 200 nm $SiO_2/Si$ substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick ${\alpha}$-Si:H layers were grown at low temperature (<$200^{\circ}C$) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the $\alpha$-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to $500^{\circ}C$ were examined using a four point probe, HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12${\Omega}$/□ regardless of the thickness of the ${\alpha}$-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications.

• Composites Research
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• v.21 no.2
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• pp.31-35
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• 2008

In order to design light weight and high efficient electromagnetic wave absorbing materials, hollow magnetic particles have been introduced in this study. The electroless plating method has been utilized to coat Ni and Fe on the substrates of synthesized polystyrene particles of submicron size. Removing polystyrene particles by heat treatment resulted in hollow structures. Observation by SEM, TEM and EDS confirmed the surface morphology and coating thickness of Ni and Fe. Polymeric composites containing hollow particles were tested in order to compare the electromagnetic properties between Ni coated and Fe costed particles. The composite of 30 wt% Fe hollow particles showed the higher complex permeability than Ni hollow particles or the conventional barium ferrite particles.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.742-748
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• 1997

Diamond films which have high hardness and thermal conductivity can be used to improve the performance of WC-Co as a cutting tool material. However, it is difficult to get such coatings of good uniformity and adhesiveness due to the surface characteristics of WC-Co. To get better coatings, some techniques, such as the surface treatment of substrate or the formation of interlayer between substrate and diamond film, have been tried. In the present work, the nickel interlayer is formed onto WC-Co by electroless Ni-P plating, which is introduced as a new method, and then diamond film is deposited on the interlayer. Formation and uniformity of three layers, i.e., substrate, electroless plate, and diamond film, and the adhesiveness of interlayers were studied. To investigate the effects of pretreatment on electroless plating, two different methods such as acid treatment and diamond powder treatment were used. The effects of heat treatment of the electroless plated surface on adhesiveness between the substrate and the interlayer were examined. It was found that as the temperature increases, the Ni crystals grow and then result in improved adhesiveness. Diamond film coatings of pure diamond phase were obtained at $800^{\circ}C$. It is concluded that the heat treated electroless Ni-P plating can be effectively used as a interlayer between WC-Co substrate and diamond film.