• Journal of the Korea Convergence Society
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• v.11 no.10
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• pp.1-7
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• 2020

The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO₂/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 10³ ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.215-222
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• 2022

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

• Smart Media Journal
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• v.11 no.3
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• pp.18-25
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• 2022

Neuromorphic computing generally shows significantly better power, area, and speed performance than neural network computation using CPU and GPU. These characteristics are suitable for resource-constrained IoT environments where energy consumption is important. However, there is a problem in that it is necessary to modify the source code for environment setting and application operation according to heterogeneous IoT devices that support neuromorphic computing. To solve these problems, NAAL was proposed and implemented in this paper. NAAL provides functions necessary for IoT device control and neuromorphic architecture abstraction and inference model operation in various heterogeneous IoT device environments based on common APIs of NAAL. NAAL has the advantage of enabling additional support for new heterogeneous IoT devices and neuromorphic architectures and computing devices in the future.

• Smart Media Journal
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• v.11 no.2
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• pp.63-69
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• 2022

As the use of various IoT devices increases, the importance of IoT platforms is also rising. Recently, artificial intelligence technology is being combined with IoT devices, and research applying a neuromorphic architecture to IoT devices with low power is also increasing. In this paper, an application scenario is proposed based on NA-IDE (Neuromorphic Architecture-based autonomous IoT application integrated development environment) with IoT devices and FPGA devices in a GUI format. The proposed scenario connects a camera module to an IoT device, collects MNIST dataset images online, recognizes the collected images through a neuromorphic board, and displays the recognition results through a device module connected to other IoT devices. If the neuromorphic architecture is applied to many IoT devices and used for various application services, the autonomous IoT application integrated development environment based on the neuromorphic architecture is expected to emerge as a core technology leading the 4th industrial revolution.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.50-56
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• 2022

In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaO_x/AlO_x/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.58-68
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• 2018

A neuromorphic hardware that mimics biological perceptions and has a path toward human-level artificial intelligence (AI) was developed. In contrast with software-based AI using a conventional Von Neumann computer architecture, neuromorphic hardware-based AI has a power-efficient operation with simultaneous memorization and calculation, which is the operation method of the human brain. For an ideal neuromorphic device similar to the human brain, many technical huddles should be overcome; for example, new materials and structures for the synapses and neurons, an ultra-high density integration process, and neuromorphic modeling should be developed, and a better biological understanding of learning, memory, and cognition of the brain should be achieved. In this paper, studies attempting to overcome the limitations of next-generation neuromorphic hardware technologies are reviewed.

• The Journal of the Convergence on Culture Technology
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• v.6 no.3
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• pp.361-367
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• 2020

This paper proposes the battery-less ultra-low-power self-powered cooperating artificial neural networks device for embedded and IoT systems. This device can work without extraneous power supplying and can cooperate with other neuromorphic devices to build large-scale neural networks. This device has energy harvesting modules, so that can build a self-powered system and be used everywhere without space constraints for power supplying.

• Ceramist
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• v.22 no.1
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• pp.17-26
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• 2019

The metal-to-insulator transition (MIT) with external stimuli is one of the main issues in correlated oxides. The physical properties are extremely sensitive to band filling, because the MIT is attributed to the strong correlation between electrons in narrow d-band. Since hydrogen is the smallest and lightest element, it is not only likely to doped reversibly in oxides, but also acts as a dopant to provide electrons. The correlated oxides showing MIT are structurally expanded after hydrogenation, and their electrical properties are drastically changed. Researches on this phenomenon have been actively carried out to date. They are of great scientific importance, and the use of this material is very diverse, including the development of next-generation hydrogen sensor, or hydrogen-based neuromorphic devices.

• Smart Media Journal
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• v.12 no.4
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• pp.19-26
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• 2023

IoT edge services utilizing neuromorphic hardware architectures are suitable for autonomous IoT applications as they perform intelligent processing on the device itself. However, spiking neural networks applied to neuromorphic hardware are difficult for IoT developers to comprehend due to their complex structures and various hyper-parameters. In this paper, we propose a method for generating spiking neural network (SNN) models that satisfy user performance requirements while considering the constraints of neuromorphic hardware. Our proposed method utilizes previously trained models from pre-processed data to find optimal SNN model parameters from profiling data. Comparing our method to a naive search method, both methods satisfy user requirements, but our proposed method shows better performance in terms of runtime. Additionally, even if the constraints of new hardware are not clearly known, the proposed method can provide high scalability by utilizing the profiled data of the hardware.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.34-40
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• 2021

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.