Electronics and Telecommunications Trends (전자통신동향분석)

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Mott-Insulator Metal Switching Technology for New Concept Devices

신개념 스위칭 소자를 위한 모트-절연체 금속 전이 기술

  • Published : 2021.06.01
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Abstract

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

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Acknowledgement

이 기술동향 보고서는 2021년 정부(과학기술정보통신부)의 재원으로 정보통신기획평가원의 지원을 받아 수행된 것임[과제번호: 2017-0-00830].

References

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