• Proceedings of the Optical Society of Korea Conference
• /
• 1990.02a
• /
• pp.115-120
• /
• 1990

The spectroscopic properties of Cr3+-doped sapphire and Ti3+-doped sapphire fibers are reported. Tensile stress produces blue shifts of the R lines and changes in their radiative lifetimes and integrated intensities which can be correlated to stress-induced changes of the crystal-field parameters in a Cr3+-doped sapphire fiber. A net red shift of the zero phonon fluorescence line of 2Eg state and a decrease of the splittings of 2T2g state with uniaxial stress are observed in a Ti3+-doped sapphire. In excitation spectra the two peaks from the 2Eg state are shifted to the blue with different rates. The changes are attributed to the stress-induced changes of crystal field and Jahn-Teller effect.

• Korean Journal of Occupational Health Nursing
• /
• v.19 no.2
• /
• pp.268-277
• /
• 2010

Purpose: To examine the relations among occupational satisfaction, stress, and customer orientation of upper-scale general hospital nurses. Method: We studied with structured questionnaires with total 66 questions for 218 nurses working at university hospitals in Gangwon-do from February 2 to 22, 2010. Result: Occupational satisfaction and customer-oriented character increased when nurses' ages and career experiences were higher, married, working in daytime without shift and in higher positions. Occupational stress increased when nurses were younger, not married, with three shifts, and when they were general nurses. However, there was no statistical difference. Customer-oriented character had positive correlation with occupational satisfaction and stress while occupational satisfaction had negative correlation(r=-0.358) with occupational stress. Conclusion: As occupational stress and satisfaction of nurses in university hospitals showed significant relations with customer-oriented character, t is necessary to reduce occupational stress of nurses, and strengthen occupational satisfaction of them.

• Journal of applied mathematics & informatics
• /
• v.38 no.1_2
• /
• pp.113-132
• /
• 2020

In this paper, a class of linear second order singularly perturbed delay differential turning point problems containing a small delay (or negative shift) on the reaction term and when the solution of the problem exhibits twin boundary layers are examined. A hybrid finite difference scheme on an appropriate piecewise-uniform Shishkin mesh is constructed to discretize the problem. We proved that the method is almost second order ε-uniformly convergent in the maximum norm. Numerical experiments are considered to illustrate the theoretical results.

• Molecules and Cells
• /
• v.23 no.1
• /
• pp.94-99
• /
• 2007

Suppressors of cytokine signaling (SOCS) family members are negative feedback regulators of the Jak/Stat pathway, which is an essential inflammatory signaling pathway. We investigated expression of eight members of the SOCS family in rat astrocytes, using two inflammatory stimulants, PMA and IFN-${\gamma}$. Only a few SOCS genes were induced by both stimulants, and we detected an increase in SOCS5 protein with PMA. PMA activated the Jnk, Erk, p38, and Jak/Stat signal pathways. In addition, it increased the level of activated-Stat3 resulting from tyrosine phosphorylation. A gel-shift assay showed that a protein in nuclear extracts from PMA-treated cells was able to bind to Stat binding elements. These results suggest that activated Stat3 binds to SOCS promoters and leads to their transcriptional induction.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.1
• /
• pp.39-47
• /
• 1994

The drain current reduction effect due to the side-gating phenomena resulted from interaction between the neighbor gates is lead to degradation of circuit performance. In this paper, these effect were modelized for circuit simulation with the shift of threshold voltage resulting from negative charge formation and the analysis of substrate leakage current resulting trapping effect. To remove dificiencies of the conventional three terminal structure, these model were implemented in SPICE with the four terminal structure, and then the constructed environment enables the simulation of circuit performance degradation resulted from side-gating effect. The validity of implemented model is proved by comparisoin with experiment data.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.249-254
• /
• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• Current Optics and Photonics
• /
• v.1 no.2
• /
• pp.125-131
• /
• 2017

We propose a new graphical method for selecting a pair of optical and housing materials to simultaneously athermalize and achromatize an LWIR optical system. To have a much better opportunity to select the IR glasses and housing materials, an athermal glass map is expanded by introducing the DOE with negative chromatic power. Additionally, from the depth of focus in an LWIR optical system, the tolerable housing boundary is provided to realize an athermal and achromatic system even for not readily available housing material. Thus, we can effectively determine a pair of optical and housing materials by reducing the thermal shift to be less than the depth of focus. By applying this method to design a night vision camera lens, the chromatic and thermal defocuses are reduced to less than the depth of focus, over the specified waveband and temperature ranges.

• Journal of Magnetics
• /
• v.16 no.2
• /
• pp.97-100
• /
• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.465-465
• /
• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.304-305
• /
• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.