JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Improvement of Device Characteristic on Solution-Processed InGaZnO Thin-Film-Transistor (TFTs) using Microwave Irradiation

  • Moon, Sung-Wan (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
  • Received : 2014.05.16
  • Accepted : 2015.03.02
  • Published : 2015.04.30
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Abstract

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

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References

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