• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.56-61
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• 2015

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

• Electrical & Electronic Materials
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• v.1 no.4
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• pp.295-302
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• 1988

본 연구에서는 미세패턴 형성을 위한 비정질 $Se_{75}Ge_{25}$박막의 네가티브형 포토레지스토에 대하여 고찰하였다. 습식현상공정을 통해 대비도가 포지티브형인 경우 1.4였고 네가티브형인 경우 2.9를 나타내어 네가티브형인 경우가 미세선폭 조절능력이 더 우수함을 알 수 있었다. 표면사진으로부터 약 1.mu.m정도의 미세패턴을 얻었음을 확인할 수 있었다.

• Journal of Sensor Science and Technology
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• v.16 no.5
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• pp.325-330
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• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.140-148
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• 2000

In this paper, using surface micromachining technology with thick photoresist and aluminum, an SLM(Spatial Light Modulator), which is applied to the fields of adaptive optics and pattern recognition system, was fabricated and the electromechanical properties of the fabricated micro SLM are measured. In order to maximize fill-factor and remove mechanical coupling between micro SLM actuators, the micro SLM is composed of three aluminum layers so that spring structure and upper electrode are placed beneath the mirror plate, and $10\times10$ each mirror plate is individually actuated. Also, the micro SLM was designed to be able to modulate phase and amplitude of incoming light in order to have a continuity of phase modulation of incoming light. In the case of amplitude and phase modulation, maximum vertical displacement is 4$\mum$, and maximum angular displacement is $\pm4.6^{\corc}$ respectively. The height difference of the fabricated mirror plate was able to be reduced to 1100A with mirror plate planarization method using negative photoresist(AZ5214). The electromechanical properties of the fabricated micro SLM were measured with the optical measurement system using He-Ne laser and PSD(position sensitive device).

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.15-22
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• 1996

FET type $Ca^{2+}$ sensor(Ca-ISFET) was fabricated by micropool and photolithographic method utilizing photosensitive polymer as membrane materials. When OMR-83 negative photoresist was used as membrane material, it gave good sensitivity by micropool method with dioctyladipate as plasticizer but it could not be used in the photolithographic method. When poly(viny1 butyral), PVB was used as membrane material, it gave relatively high sensitivity ($23{\pm}0.2\;mV/decade$) for $Ca^{2+}$ concentration range of $10^{-4}{\sim}10^{-1}\;mole/{\ell}$ by photolithographic method. PVB also provided good adhesion to the pH-ISFET base device without adhesion promoter pretreatment and any plasticizer.

• Laser Solutions
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• v.14 no.1
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• pp.25-29
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• 2011

Micromachining of photosensitive glass by UV exposure, heat treatment, and etching processes is reported. Like photoresist, the photosensitive glass is also classified into positive and negative types by development characteristics. For the positive type, the exposed area is crystallized and etched away during the etching process in HF solution, whereas the unexposed area is crystallized and etched away for the negative type. The crystallized area of the photosensitive glass has an etch rate approximately 30~100 times faster than that of the amorphous area so that it becomes possible to fabricate microstructures in the glass. Based on the unique properties of glass such as high optical transparency, electrical insulation, and chemical/thermal stability, the glass micromachining technique introduced in this work could be widely applied to various devices in the fields of electronics, bio engineering, nanoelectonics and so on.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.268-272
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• 2002

This paper presents a novel microfabrication technology of 3D microstructures with inclined/rotated UV lithography using negative photoresist, SU-8. In some cases, reflected UV as well as incident UV is used to form microstructures. Various 3D microstructures are simply fabricated such as embedded channels, bridges, V-grooves, truncated cones, and so on.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.141-143
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• 1994

In this paper, an electrostatic micro-actuator is fabricated using flat p+ diaphragm. To avoid the buckling of the flat p+ diaphragm, the processes are designed appropriately. The fabrication processes of the actuator are the anisotropic etching with EPW, the boron diffusion process, Al deposition and the silicon to glass bonding using the negative photoresist. The distance between the p+ and Al electrodes is $10{\mu}m$, and the thickness of the p+ diaphragm is $2{\mu}m$. The measurement of the characteristic of the actuator is performed at 50V. The center displacement of the diaphragm is $1.5{\mu}m$ at 10Hz. In comparison with the experimental data of the actuator with corrugated diaphragm, it is confirmed that the actuator with flat diaphragm is more effective than that with corrugated one in the small deflection region.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2383-2385
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• 2005

In this paper we discuss the design and fabrication of two millimeter wave filters, in bandpass and bandstop topologies for wireless communications applications. The filters are made using a high Q MMIC transmission line, which consists of a 100 micrometers tall, surface micromachined, air filled inverted microstrip structure on a quartz substrate, made by using a JSR THB-151N negative photoresist sacrificial layer mold and electroplating technology. The filter topologies include a new, very compact, four pole, cross-coupled filter, that presents a single transmission zero at the lower side of the passband, which provides a very sharp out of passband rejection at this region.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.284-285
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• 2007

In this paper, we present the effect on a novel transmission line filter response by the etch hole position on the suspended ground and the residue on the resonator under ground plane. We defined the etch hole offset as the distance from the sidewall of the suspended ground to the nearest side of the etch holes. We simulated new filter responses to reflect the real value of the changed etch hole offset caused by characteristics of negative photoresist. Return loss is distorted by the residue on the center conductor remained after sacrificial layer removing. By comparison of simulation and measurements, we concluded the residue on the resonator distorted the RF response worse than etch hole offset variation did.