• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.93-105
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• 2010

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.175-188
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• 2011

As complementary metal-oxide semiconductor (CMOS) continues to scale down deeper into the nanoscale, various device non-idealities cause the I-V characteristics to be substantially different from well-tempered metal-oxide semiconductor field-effect transistors (MOSFETs). The last few years witnessed a dramatic increase in nanotechnology research, especially the nanoelectronics. These technologies vary in their maturity. Carbon nanotubes (CNTs) are at the forefront of these new materials because of the unique mechanical and electronic properties. CNTFET is the most promising technology to extend or complement traditional silicon technology due to three reasons: first, the operation principle and the device structure are similar to CMOS devices and it is possible to reuse the established CMOS design infrastructure. Second, it is also possible to reuse CMOS fabrication process. And the most important reason is that CNTFET has the best experimentally demonstrated device current carrying ability to date. This paper discusses and reviewsthe feasibility of the CNTFET's application at this point of time in integrated circuits design by investigating different types of circuit blocks considering the advantages that the CNTFETs offer.

• Journal of Communications and Networks
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• 제12권2호
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• pp.158-167
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• 2010

The energy efficiency of wireless infrastructure and terminals has been drawing renewed attention of late, due to their significant environmental cost. Emerging green communication paradigms such as cognitive radios, are also imposing the additional requirement of flexibility. This dual requirement of energy efficiency and flexibility poses new design challenges for implementing radio functional blocks. This paper focuses on the area vs. power trade-offs for the type of channel filters that are required in the digital frontend of a flexible, energy-efficient radio. In traditional CMOS circuits, increased area was traded for reduced dynamic power consumption. With leakage power emerging as the dominant mode of power consumption in nanoscale CMOS, these trade-offs must be revisited due to the strong correlation between area and leakage power. The current work discusses how the increased timing slacks obtained by increasing the parallelism can be exploited for overall power reduction even in nanoscale circuits. In this context the paper introduces the notion of 'area efficiency' and a metric for evaluating it. The proposed metric has also been used to compare the area efficiencies of different classes of time-shared filters.

• 한국항행학회논문지
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• 제17권6호
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• pp.700-704
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• 2013

양자 셀룰라 오토마타(QCA)는 CMOS의 기술을 상속받을 차세대 나노 전자 소자 중 하나이다. QCA는 원자규모 및 초저전력화로 이목이 집중되고 있으며 다양한 QCA 회로들이 제안되었다. 십진 출력을 요하는 전자회로와 마이크로프로세서에서 주로 사용되는 이진화 십진법(BCD)은 연산을 위한 변환은 편하지만 데이터 낭비가 심하다. 본 논문에서는 QCA 회로에서 감산 및 반올림에 효과적으로 이용될 수 있는 BCD-3초과 코드를 제안한다. 제안된 구조는 잡음을 최소화하고 공간 및 시간 복잡도를 고려하여 효율적으로 설계되었으며 시뮬레이션을 통해 검증하였다.