• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1573-1575
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• 2004

An alumina membrane with nano-sized pores was fabricated by anodic oxidation. The shape and structure of the pore on alumina membrane were changed according to the roughness of aluminum surface. The shape and structure of the nano-sized pre were investigated according to purity of aluminum substrate for the anodization process. The aluminum substrates with 99.5% and 99.999% purities were used. The aluminum substrate(99.5%) was anodized after the processes of pressing, mechanical polishing, chemical polishing, and electrochemical polishing. The nano-sized pores with the pore size of 50 - 100nm, the cell size of 20-50nm and the thickness of $10{\mu}m{\sim}45{\mu}m$ were obtained. Even though the electrochemical polishing was used for the aluminum substrate (99.999%), the same characteristics as the aluminum substrate (99.5%) was obtained. The alumina membrane prepared by anodization for 5 min using fixed voltage method shows the pore with irregular shape. The pore shape was changed to regular shape after pore widening process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.120-122
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권6호
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• pp.239-244
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• 2005

Nano-sizedporearrayswerepreparedbytheself-organizationprocessesoftheanodicoxidationusingthealuminumplatewith99.999$\%$purity.Sincethealuminumplatehasaroughsurface,thealuminumplateof1mmthicknesswasanodizedafterthepre-treatmentsofpressing,mechanicalpolishing,thermaloxidation,chemicalpolishing,andelectrochemicalpolishing.Thediameterofthenano-sizedporesandthethicknessofbarrierlayercanbecontrolledbyappliedvoltage.Thethicknessofaluminamembranecanalsobecontrolledbytheanodizingcurrent.Thenano-sizedporeswithdiameterof60$\~$120nm,thedistancebetweenthenearestporesof30$\~$60nm,andthethicknessof6$\~$7Wwereobtainedbytheanodicoxidationprocess.Theporewideningprocesswasemployedforobtainingtheone-channelwithflatsurfacebecausetheporesofthealuminamembranepreparedbythefixedvoltagemethodshowsthestructureoftwo-channelwithroughsurface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1576-1578
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• 2004

The alumina membrane with nano sized pore was prepared from aluminum by anodic oxidation to apply for storage equipment, gas sensor and stamper. The pore size and cell size of the pores are controlled by anodic oxidation voltage. The alumina thickness was controlled by etching process using 0.2M $H_3PO_4$. The thickness of alumina on Si wafer was very accurately controlled by anodic oxidation time. Nickel with nano-sized grain was electroplated on the Au layer on silicon wafer. The fabricated pores on alumina membrane was the thickness of $7{\sim}10{\mu}m$ with straight nano-sized pore of 307${\sim}$120nm. The alumina by the etching process shows smooth surface. The size of Ni grain was 130nm and 250nm for 10mA/$cm^2$and 20mA/$cm^2$of electroplating currents, respectively.

• 제어로봇시스템학회논문지
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• 제14권5호
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• pp.420-425
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• 2008

PMMA light guiding plate with nano-sized pattern was fabricated using anodized aluminum oxide membrane as a template for nano imprint lithography. Nano-sized pore arrays were prepared by the self-organization processes of the anodic oxidation using the aluminum plate with 99.999% purity. Since the aluminum plate has a rough surface, the aluminum plate with thickness of 1mm was anodized after the pre-treatments of chemical polishing, and electrochemical polishing. The surface morphology of the alumina obtained by the first anodization process was controlled by the concentration of electrochemical solution during the first anodization. The surface morphology of the alumina was also changed according to temperature of the solution during chemical polishing performed after first anodization. The pore widening process was employed for obtaining the one-channel with flat surface and height of the channel because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. It is shown from SPM results that the nano-sized pattern on PMMA light guiding plate fabricated by nano imprint lithography method was well transferred from that of anodized aluminum oxide template.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1971-1973
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• 2005

We fabricated an alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. The nano-sized pores with diameter of $60{\sim}120nm$ was obtained by $40{\sim}80$ voltage. The pore widening process was employed for obtaining the flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano- structure.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.53-53
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• 2003

There has been increasing interest in the fabrication of nano-sized structures because of their various advantages and applications. Anodic Aluminum Oxide (AAO) is one of the most successful methods to obtain highly ordered nano pores and channels. Also It can be obtained diverse pore diameter, density and depth through the control of anodization condition. The three types of substrates were used for anodization; sheets of Aluminum on Si wafer and Aluminum on Mo-coated Si wafer. In Aluminum sheet, a highly ordered array of nanoholes was formed by the two step anodization in 0.3M oxalic acid solutions at 10$^{\circ}C$ After the anodization, the remained aluminum was removed in a saturated HgCl$_2$ solution. Subsequently, the barrier layer at the pore bottom was opened by chemical etching in phosphoric acid. Finally, we can obtain the through-channel membrane. In these processes, the effect of various parameters such as anodizing voltage, anodizing time, pore widening time and pre-heat treatment are characterized by FE-SEM (HITACH-4700). The pore size. density and growth rate of membrane are depended on the anodizing voltage and temperature respectively. The pore size is proportional to applied voltage and pore widening time The pore density can be controlled by anodizing temperature and voltage.

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1562-1566
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• 2006

Mesoporous silica films with three different pore sizes were prepared by using cationic surfactant, non-ionic surfactant, or triblock copolymer as structure directing agents with tetramethylorthosilicate as silica source in order to control the pore size and wall thickness. They were synthesized by an evaporation-induced self-assembly process and spin-coated on Si wafer. Mesoporous silica films with three different pore sizes of 2.9, 4.6, and 6.6 nm and wall thickness ranging from $\sim$1 to $\sim$3 nm were prepared by using three different surfactants. These materials were optically transparent mesoporous silica films and crack free when thickness was less than 1 m m. The photoluminescence spectra found in the visible range were peaked at higher energy for smaller pore and thinner wall sized materials, consistent with the quantum confinement effect within the nano-sized walls of the silica pores.

• 대한화장품학회지
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• 제24권3호
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• pp.59-64
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• 1998

In order to lower porosity of the porous silica, titanium alkoxide solution was filled in the pore of silica in the heating-vacuum condition. The specific surface area of modified samples was decreased effectively from 900 m$^2$/g to 100 m$^2$/g. (The aggregation phenomena in modified samples were improved fairly.) Samples were heated at 600 , and then the titanium alkoxide in the pore was decomposed completely to titanium oxide from TGA-DTA measurement. From SEM result, it was evident that titanium oxide did not coat the surface of the silica. The modified samples were analyzed using SEM, DTA-TGA, BET, and UV-visible spectrometer.