• Composites Research
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• v.23 no.3
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• pp.13-18
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• 2010

One of the biggest challenges in the nano-field is how to effectively disperse nano-scale particles, especially CNTs, which are strongly agglomerated by intermolecular van der Waals forces. This study suggests a new method, discharge flocking, in order to disperse nano-scale particles effectively, which combines corona discharge phenomenon and a traditional electrostatic flocking process. In order to evaluate the discharge flocking process, composite specimens were fabricated by the process and RFI(resin film infusion) process, and then the mechanical and electrical properties of the specimens were measured and compared. Moreover, the evaluation of gas discharge effect on the CNTs and epoxy was performed to compare the mechanical and electrical properties of the composite specimens including the plasma treated CNTs. The experimental results showed that the electrical and mechanical properties of the specimens fabricated by the discharge flocking process were similar to those of the RFI process. In addition, plasma treated CNTs were not affected by gas discharge during the discharge flocking process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.1
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• pp.64-70
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• 2008

Thanks to the breakthroughs in micro fabrication technology, numerous concepts of micro aerospace systems including micro aerial vehicle, nano satellite and micro robot have been proposed. In order to activate these mobile micro systems, high density power in a small scale power source is required. However, we still do not have micro power source that has energy density that can support these systems. In the present article, status of micro power sources are described and alternatives that have been derived from the past experience are proposed.

• Korean Chemical Engineering Research
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• v.44 no.1
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• pp.1-9
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• 2006

Biodevices composed of biomolecular layer by mimicking the natural functions of cells and the interaction mechanisms of the constituted biomolecules have been developed in various industrial fields such as medical diagnosis, drug screening, electronic device, bioprocess, and environmental pollution detection. To construct biodevices such as bioelectronic devices (biomolecular diode, bio-information storage device and bioelectroluminescence device), protein chip, DNA chip, and cell chip, biomolecules including DNA, protein, and cells have been used. Fusion technology consisting of immobilization technology of biomolecules, micro/nano-scale patterning, detection technology, and MEMs technology has been used to construct the biodevices. Recently, nanotechnology has been applied to construct nano-biodevices. In this paper, the current technology status of biodevice including its fabrication technology and applications is described and the future development direction is proposed.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.619-626
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• 2019

The advances of semiconductor and circuitry technology dovetailed with nano processing techniques have further enhanced micro-miniaturization, sensitivity, longevity and reliability in MID(Medical Implant Device). Nevertheless, one of the remaining challenges is whether power can sufficiently and continuously be supplied for the operation of the MID. Self-powered MID that harvest biomechanical energy from human motion, respiratory and muscle movement are part of a paradigm shift. In this paper, we developed a rechargeable pacemaker through self-power generation with the triboelectric nanogenerator. We demonstrate a fully implanted pacemaker based on an implantable triboelectric nanogenerator, which act as a storage as well as active movement on a large-animal(dog) scale. The self-power pacemaker harvested from animal motion is 2.47V, which is higher than the required pacemaker device sensing voltage(1.35V).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.23-30
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• 2006

This paper describes the short-channel effect(SCE), corner effect of nano-scale MuGFETs(Multiple-Gate FETs) by three-dimensional simulation. We can extract the equivalent gate number of MuGFETs(Double-gate=2, Tri-gate=3, Pi-gate=3.14, Omega-gate=3.4, GAA=4) by threshold voltage model. Using the extracted gate number(n) we can calculate the natural length for each gate devices. We established a scaling theory for MuGFETs, which gives a optimization to avoid short channel effects for the device structure(silicon thickness, gate oxide thickness). It is observed that the comer effects decrease with the reduction of doping concentration and gate oxide thickness when the radius of curvature is larger than 17 % of the channel width.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.801-803
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• 2004

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than $10{\%}-20{\%}$ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.32-40
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• 2004

An extension of the density-gradient model to include the non-local transport effect is presented. The governing equations can be derived from the first three moments of the Wigner distribution function with some approximations. A new nonlinear discretization scheme is applied to the model to reduce the discretization error. We also developed a new boundary condition for the $Si/SiO_2$ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. We report the simulation results of a 25-nm metal-oxide-semiconductor field-effect transistor (MOSFET) device.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1917-1921
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• 2008

Ultraviolet-nanoimprint lithography (UV-NIL) is promising technology for cost effectively defining micro/nano scale structure at room temperature and low pressure. In addition, this technology is fascinating because of it's possibility for high-throughput patterning without complex processes. However, to acquire good micro/nano patterns using this technology, there are some challenges such as uniformity and fidelity of patterns, etc. In this paper, we have focused on uniform contact mechanism and performed contact mechanics analysis. The dimension of the flexible sheet to get adequate uniform contact area has been obtained from contact mechanics simulation. Based on this analysis, we have made a uniform pressurizing device and confirmed its uniform pressurized zone using a pressure sensing paper.

• Macromolecular Research
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• v.13 no.5
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• pp.435-440
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• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.