• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.25.2-25.2
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• 2008

• Progress in Superconductivity
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• v.3 no.2
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• pp.188-192
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• 2002

To introduce flux pinning center in HTS-BSCCO system, nano-size MgO particles were uniformly distributed within the Bi-2223 grain by partial hydration of MgO. The existing method MgO doped Bi-2223 used nato-size MgO powders, which resulted in agglomeration during mixing or grain growth during heat-treatment due to the high surface energy of the fine particles. By hydration of the MgO surface, the agglomeration of the MgO powders was avoided and the size of remaining MgO core was controlled by changing hydration medium and time. The thin film obtained by spin coating of (Bi_$1.8/Pb_{0.4}$)$Sr_2$$_{Ca}$$2.2/Cu_3$ $O_{y}$ nitrate solution mixed with hydrated MgO showed the even distribution of nano-size MgO particles in the Bi-2212 grains.s.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.91-94
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• 2008

Newly developed Atom Probe Tomography (APT) technique can provide the highest available spatial resolution, 3D tomography imaging and quantitative chemical analysis in a sub-nm scale. As a complementary technique to APT, Nano-secondary ion Mass Spectroscopy (SIMS) also provides the boron distribution in micro-scale. Therefore, the exact behavior of boron at either grain boundary or grain interior in steels can be investigated by the combination of APT and SIMS techniques from the sub-nanometer scale to the micrometer scale. The results obtained by both APT and SIMS revealed that the boron atoms were mainly segregated to the grain boundaries rather than to the grain interior in the steels containing 50ppm and 100ppm boron. It also found that carbon atoms were segregated at the boron enriched regions, which were thought to be retained austenite phase due to the chemical composition of carbon atoms.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1576-1578
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• 2004

The alumina membrane with nano sized pore was prepared from aluminum by anodic oxidation to apply for storage equipment, gas sensor and stamper. The pore size and cell size of the pores are controlled by anodic oxidation voltage. The alumina thickness was controlled by etching process using 0.2M $H_3PO_4$. The thickness of alumina on Si wafer was very accurately controlled by anodic oxidation time. Nickel with nano-sized grain was electroplated on the Au layer on silicon wafer. The fabricated pores on alumina membrane was the thickness of $7{\sim}10{\mu}m$ with straight nano-sized pore of 307${\sim}$120nm. The alumina by the etching process shows smooth surface. The size of Ni grain was 130nm and 250nm for 10mA/$cm^2$and 20mA/$cm^2$of electroplating currents, respectively.

• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.124-128
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• 2006

In recent years, equal channel angular pressing (ECAP) has been the subject of intensive study due to its capability of producing fully dense samples having a ultrafine grain size. In this paper, the ECAP process was applied to metallic powders in order to achieve both powder consolidation and grain refinement. In the ECAP process for solid and powder metals, knowledge of the internal stress, strain and strain rate distribution is fundamental to the determination of the optimum process conditions for a given material. The properties of the ECAP processed solid and powder materials are strongly dependent on the shear plastic deformation behavior during ECAP, which is controlled mainly by die geometry, material properties, and process conditions. In this study, we investigated the consolidation, plastic deformation and microstructure evolution behaviour of the powder compact during ECAP.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.344-345
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• 2006

The linear intercept (LI) method was used to quantitatively measure the intercepts of WC grains in nano-grained WC-10Co hardmetal. When the surveyed intercept numbers of WC grain exceeded 200, the statistic data for the mean grain size of WC were reproduced. The discriminative minimal grain size of used LI method was 12 nm; the maximum intercept of WC grain was 109 nm; the average intercept of WC grains was 45 nm and the corresponding 3D mean grain size of WC was 70 nm which is agreeable with the XRD outcome.

• 연구논문집
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• s.23
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• pp.165-171
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• 1993

$Si_3N_4/Sic$. nano-composites were fabricated by hot-pressing, gas pressure sintering. The composites contained up to 50 wt. % of SiC. The mechanical properties such as strength, toughness, and hardness of the composite are compared each other. The flexural strength of the composites was improved significantly by introducing fine SiC particles into $Si_3N_4$ matrix, while the fracture toughness was not improved. The increase in flexural strength is attributed to the formation of uniformly elongated $\beta -Si_3N_4$ grains as well as the reduction of grain size.

• Advances in nano research
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• v.8 no.2
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• pp.157-167
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• 2020

This paper studies forced vibrational behavior of porous nanocrystalline silicon nanoshells under radial dynamic loads using strain gradient theory (SGT). This type of material contains many pores inside it and also there are nano-size grains which define the material character. The formulation for nanocrystalline nanoshell is provided by first order shell theory and a numerical approach is used in order to solve nanoshell equations. SGT gives a scale factor related to stiffness hardening provided by nano-grains. For more accurate description of size effects due to nano-grains or nano-pore, their surface energy influences have been introduced. Surface energy of inclusion exhibit extraordinary influence on dynamic response of the nanoshell. Also, dynamic response of the nanoshell is affected by the scale of nano-grain and nano-pore.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.209.2-209
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• 2003