• Title/Summary/Keyword: nano cluster

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Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.4
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    • pp.454-461
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    • 2015
  • Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

A Study on Selecting the Key Research Areas in Nano-technology Field in Korea: An Application of Technology Cluster Analysis in National R&D Program (한국의 나노기술 분야에서 핵심 연구영역 도출에 관한 연구 -국가 연구개발사업 수준에서 기술군집분석의 적용-)

  • 이용길;이세준;이재영
    • Journal of Korea Technology Innovation Society
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    • v.6 no.2
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    • pp.175-190
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    • 2003
  • This paper deals with the methods for selecting the key research areas, which fit for the large, multi-disciplinary, and long-term programs by making use of Technology Cluster Analysis. This method is applied to mano-technology field at the level of national R&D program. 56 nano-technologies are analyzed and grouped into three main clusters based on the survey data from 180 experts. Three main clusters are \circled1 naro-materials related cluster, \circled2 naro-device related cluster, and \circled3 naro-bio related cluster. These three clusters are coincided with the focused areas of nano-technology in Korea. Each cluster is analyzed in view of its competence position.

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Molecular Dynamics Study on Behaviors of Liquid Cluster with Shape and Temperature of Nano-Structure Substrate (나노구조기판의 형상 및 온도변화에 따른 액체 클러스터의 거동에 대한 분자동역학적 연구)

  • Ko, Sun-Mi;Jeong, Heung-Cheol;Shibahara, Masahiko;Choi, Gyung-Min;Kim, Duck-Jool
    • Journal of ILASS-Korea
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    • v.13 no.1
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    • pp.34-41
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    • 2008
  • Molecular dynamic simulations have been carried out to study the effect of the nano-structure substrate and its temperature on cluster laminating. The interaction between substrate molecules and liquid molecules was modeled in the molecular scale and simulated by the molecular dynamics method in order to understand behaviors of the liquid cluster on nano-structure substrate. In the present model, the Lennard-Jones potential is applied to mono-atomic molecules of argon as liquid and platinum as nano-structure substrate to perform simulations of molecular dynamics. The effect of wettability on a substrate was investigated for the various beta of Lennard-Jones potential. The behavior of the liquid cluster and nano-structure substrate depends on interface wettability and function of molecules force, such as attraction and repulsion, in the collision progress. Furthermore, nano-structure substrate temperature and beta of Lennard-Jones potential have effect on the accumulation ratio. These results of simulation will be the foundation of coating application technology for micro fabrication manufacturing.

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Excellent properties of Indium Tin Oxide-Carbon Nano tube Nano composites at low temperatures by Nano Cluster Deposition technique

  • Pammi, S.V.N.;Park, Jong-Hyun;Chanda, Anupama;Park, Yeon-Woong;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.7-7
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    • 2010
  • Indium tin oxide (ITO) - SWNT nano crystalline composites was synthesized at low temperature(${\sim}250^{\circ}C$)using Nano Cluster Deposition technique by Metal Orhoganic Chemical Vapor Deposition method. XRD patterns of ITO- SWNT composite shows pure cubic phases without any secondary phase. I-V measurement gives resistance of 12 ohms for Sn doped (3 wt %) indium oxide-SWNT composites. The electrical conductivity of the nano composites is significantly enhanced compared to the SWNT.

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Surface Properties, Friction, Wear Behaviors of the HOVF Coating of T800 Powder and Tensile Bond Strength of the Coating on Ti64

  • Cho, T.Y.;Yoon, J.H.;Joo, Y.K.;Cho, J.Y.;Zhang, S.H.;Kang, J.H.;Chun, H.G.;Kwon, S.C.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.11-12
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    • 2008
  • Micron-sized Co-alloy T800 powder was coated on Inconel718 (IN718) using high velocity oxygen fuel (HVOF) thermal spraying by the optimal coating process (OCP) determined from the best surface hardness of 16 coatings prepared by Taguchi program. The surface hardness improved 140-160 % from 399 Hv of IN718 to 560-630 Hv by the coating. Porosity of the coating was 1.0-2.7 %, strongly depending on spray parameters. Both friction coefficients (FC) and wear traces (WT) of the coating were smaller than those of IN718 substrate at both $25^{\circ}C$ and $538^{\circ}C$. FC and WT of IN718 and coating decreased with increasing the surface temperature. Tensile bond strength (TBS) and fracture location (FL) of Ti64/T800 were 8,770 psi and near middle of T800 coating respectively. TBS and FL of Ti64/NiCr/T800 were 8,740 psi and near middle of T800 coating respectively. This showed that cohesion of T800 coating was 8,740-8,770 psi, and adhesion of T800 on Ti64 and NiCr was stronger than the cohesion of T800.

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Study of Nano-scale Fullerene (C60) Clusters Formed in Micro-sized Droplet by UV Irradiation

  • Yeo, Seung-Jun;Ahn, Jeung-Sun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.571-571
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    • 2012
  • We discovered the formation of C60 aggregates in solution by means of photoluminescence spectroscopic study on C60 in solutions. From the in-depth investigation of temperature dependence of the luminescence of C60 in toluene, benzene and CS2 solutions, we reported that the C60 aggregates are formed during cooling at the freezing temperature of these solvents. Furthermore, the C60 aggregates can be changed to stable structures by irradiating with UV pulse-laser (Nd:YAG laser, 355nm). As a consequence, we could obtain nano-scale photo-polymerized C60 clusters, which appear as round-shaped nano- scale particles in high resolution transmission electron-microscopy (HRTEM) images. However, the yield of the nano-scale C60 clusters obtained by this method is too small. So we designed and developed a system to obtain C60 cluster of macroscopic quantity by using ultrasonic nebulizer. In this system, C60 solution was vaporized to several micro-sized droplets in vacuum, resulting in the formation of C60 aggregates by evaporating solvent (toluene). The system was invented to produce nano-scale carbon clusters by the irradiation of UV light upon C60 aggregates in vacuum. We have characterized the products, C60 cluster, obtained from the system by using UV absorption spectra and HPLC spectra. Although the products have a possibility of inclusion various forms of C60 cluster, results support that the product formed from the system by using vaporizer method establishes a new method to obtain C60 cluster in macroscopic quantity. In the presentation, the details of the system and the results of characterization are reported.

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Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

  • Shin, Hong-Sik;Oh, Se-Kyung;Kang, Min-Ho;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.260-264
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    • 2010
  • In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

Development of On-board Computer Module for Formation Flying and Cluster Operation Nano-satellites (초소형 위성의 편대 및 군집 운용을 위한 모듈형 온보드 컴퓨터 개발)

  • Oh, Hyungjik;Kim, Do-hyun;Park, Ki-Yun;Lee, Ju-in;Jung, Insun;Lee, Seonghwan;Park, Jae-Pil
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.47 no.10
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    • pp.728-737
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    • 2019
  • In this study, the minimized on-board computer (OBC) module for integrated navigation is developed, which provides satellites' relative position information in formation flying and cluster operation situations. The scalability is considered to apply the user-selected wireless communication module and Global Positioning System (GPS) receiver for navigation, while considering to meet the structural design standard of nano-satellites. As a result of the product development and production, the processing speed of integrated navigation and real-time data synchronization is satisfied for cluster operation nano-satellites by using micro controller unit (MCU). From a heat/vacuum, vibration and radiation test, the OBC was confirmed to be operated in space environments. From these results, a mass production system of OBC was made which is a key part of development on satellite formation flying and cluster/constellation missions that the community demands are increasing.

Improving the Thermal Stability of Ni-silicide using Ni-V on Boron Cluster Implanted Source/drain for Nano-scale CMOSFETs (나노급 CMOSFET을 위한 Boron Cluster(B18H22)가 이온 주입된(SOI 및 Bulk)기판에 Ni-V합금을 이용한 Ni-silicide의 열안정성 개선)

  • Li, Shu-Guang;Lee, Won-Jae;Zhang, Ying-Ying;Zhun, Zhong;Jung, Soon-Yen;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.487-490
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    • 2007
  • In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.

Improved photoresponsivity of AlGaN UV photodiode using antireflective nanostructure (반사방지 나노 구조체를 이용한 AlGaN UV 광다이오드의 광반응도 향상)

  • Dac, Duc Chu;Choi, June-Heang;Kim, Jeong-Jin;Cha, Ho-Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.10
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    • pp.1306-1311
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    • 2020
  • In this study, we proposed an anti-reflective nano-structure to improve the photoresponsivity of AlGaN UV photodiode that can be used as a receiver in a solar blind UV optical communication system. The anti-reflective nano-structure was fabricated by forming Ni nano-clusters on SiO2 film followed by etching the underneath SiO2 film. A sample with the anti-reflective nano-structure exhibited lower surface reflection along with less dependency on the wavelength in comparison with a sample without the nano-structure. Finally, a UV photodiode was fabricated by applying an anti-reflective structure produced by heat-treating a 2 nm-thick Ni layer. The photodiode fabricated with the proposed nano-structure exhibited noticeable improvement in the photoresponsivity at the wavelength range from 240 nm to 270 nm in comparison with the same photodiode with a SiO2 film without the nano-structure.