JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena (Centre for Quantum Dynamics, School of Natural Sciences, Griffith University) ;
  • Ryu, Beo Deul (School of Semiconductor and Chemical Engineering, Chonbuk National University) ;
  • Han, Min (School of Semiconductor and Chemical Engineering, Chonbuk National University) ;
  • Yang, Jong Han (School of Semiconductor and Chemical Engineering, Chonbuk National University) ;
  • Lysak, Volodymyr V. (Department of Nanotechnology and Material Science, ITMO University) ;
  • Hong, Chang-Hee (School of Semiconductor and Chemical Engineering, Chonbuk National University)
  • Received : 2015.03.22
  • Accepted : 2015.08.03
  • Published : 2015.08.30
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Abstract

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

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References

  1. T. Mukai, H. Narimatsu, S. Nakamura, "Amber InGaN-based light-emitting diodes operable at high ambient temperatures", Jpn. J. Appl. Phys. 37, L479-L481,1998. https://doi.org/10.1143/JJAP.37.L479
  2. E. F. Schubert, Light Emitting Diode, 2nd edition ed., Cambridge University Press, England, 2003.
  3. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Prospects for LED lighting," Nat. Photonics 3, 180-182, 2009. https://doi.org/10.1038/nphoton.2009.32
  4. D. Xiao, K.W. Kim, S.M. Bedair, J. M. Zavada, "Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures", Appl. Phys. Lett. 84, pp. 672-674, 2004. https://doi.org/10.1063/1.1644920
  5. J. K. Sheu, Y.S. Lu, M. L. Lee, W.C. Lai, C.H. Kuo, C. J. Tun, "Enhanced efficiency of GaNbased light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer", Appl. Phys. Lett. 90, 263511(1)-263511(3), 2007.
  6. J. Y. Kim, M. K. Kwon, K. Jae-Pil, S. J. Park, "Enhanced light extraction from triangular GaNbased light-emitting diodes", IEEE Photonic Tech. Lett. 19, 1865-1867, 2007.
  7. R.M. Lin, Y.C. Lu, S.F. Yu, Y.S. Wu, C.H. Chiang, W.C. Hsu, S. J. Chang, "Enhanced extraction and efficiency of blue light-emitting diodes prepared using two-step-etched patterned sapphire substrates", J. Electrochem. Soc. 156, H874-H876, 2009. https://doi.org/10.1149/1.3231502
  8. S. F. Yu, S. P. Chang, S. J. Chang, R. M. Lin, H. H. Wu, W. C. Hsu, "Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights", J. of Nanomaterials, 2012, 346915(1) -346915(6), 2012.
  9. J. Y. Kim, M. K. Kwon, K. S. Lee, S. J. Park, S. H. Kim, K. D. Lee, "Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal", Appl. Phys. Lett. 91,181109(1)-181109(3), 2007.
  10. A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, L. A. Kolodziejski, "Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode", Appl. Phys. Lett. 78, 563-565, 2001. https://doi.org/10.1063/1.1342048
  11. J. K. Kim, A. N. Noemaun, F.W. Mont, D. Meyaard, E.F. Schubert, D.J. Poxson, H. Kim, C. Sone, Y. Park, "Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars", Appl. Phys. Lett. 93, 221111(1)-221111(3), 2008.
  12. S. Chhajed, W. Lee, J. Cho, E. F. Schubert, J. K. Kim, "Strong light extraction enhancement in GaInN light-emitting diodes by using selforganized nanoscale patterning of p-type GaN", Appl. Phys. Lett. 98, 071102(1)-071102(3), 2011.
  13. R. Wang, D. Liu, Z. Zuo, Q. Yu, Z. Feng, X. Xu, "Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes", AIP Adv. 2 , 012109(1)-012109(6), 2012.
  14. C. F. Lin, J. H. Zheng, Z. J. Yang, J. J. Dai, D.-Y. Lin, C.Y. Chang, Z. X. Lai, C.S. Hong, "Highefficiency InGaN-based light-emitting diodes with nanoporous GaN: Mg structure", Appl. Phys. Lett. 88, 083121(1)-083121(3), 2006.
  15. Y. Zhi-Guo, C. Peng, Y. Guo-Feng, L. Bin, X. Zi- Li, X. Xiang-Qian, W. Zhen-Long, X. Feng, X. Zhou, H. Xue-Mei, H. Ping, S. Yi. Z. Rong, Z. You-Dou, "Enhanced light output of InGaN-based light emitting diodes with roughed p-type GaN surface by using Ni nanoporous template", Chin. Phys. Lett. 29, 098502(1)-098502(3), 2012.
  16. H. W. Huang, C. C. Kao, J. T. Chu, W. C. Wang, T. C. Lu, H. C. Kuo, S. C. Wang, C. C. Yu, S. Y. Kuo, "Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method", Mater. Sci. Eng. B 136, 182-186, 2007. https://doi.org/10.1016/j.mseb.2006.09.030
  17. C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, C.Y. Chang, "Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces", Appl. Phys. Lett. 93, 203103(1)-203103(3), 2008.
  18. J. Bai, Q. Wang and T. Wang, "Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes", Phys. Status Solidi A 209, 477-480, 2012 https://doi.org/10.1002/pssa.201100456
  19. P. W. Voorhees, "The theory of Ostwald ripening", J Stat. Phys. 38, 231-252, 1985. https://doi.org/10.1007/BF01017860
  20. J. M. Wen, J. W. Evans, M. C. Bartelt, J. W. Burnett, P. A. Thiel, "Coarsening mechanisms in a metal film: from cluster diffusion to vacancy ripening", Phys. Rev. Lett., 76, 652-655, 1996. https://doi.org/10.1103/PhysRevLett.76.652
  21. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, J. M. Van Hove, "Electrical effects of plasma damage in p-GaN", Appl. Phys. Lett. ,75, 2569-2571, 1999. https://doi.org/10.1063/1.125080
  22. T.B. Wei, Q.F. Kong, J.X. Wang, J. Li, Y.P. Zeng, G.H. Wang, J.M. Li, Y.X. Liao, and F. Yi, "Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands," Opt. Express, 19, 1065, 2011. https://doi.org/10.1364/OE.19.001065
  23. V. V. Lysak, K.S. Chang, Y.T. Lee, " Current crowding in graded contact layers of intracavitycontacted oxide-confined vertical-cavity surfaceemitting lasers", Appl. Phys. Lett. 87, 231118-1-3, 2005 https://doi.org/10.1063/1.2140886

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