• Title/Summary/Keyword: nDrive

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Fabrication of Electrostatic Track-Following Microactuator for Hard Disk Drive Using SOI (SOI를 이용한 하드 디스크 드라이브용 정전형 트랙 추적 마이크로 액추에이터의 제작)

  • Kim, Bong-Hwan;Chun, Kuk-Jin;Seong, Woo-Kyeong;Lee, Hyo-Jung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.8
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    • pp.1-8
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    • 2000
  • We have achieved a high aspect ratio track-following microactuator (TFMA) which is capable of driving 0.3 ${\mu}m$ magnetic head for hard disk drive (HDD). it was fabricated on silicon on insulator (SOI) wafer with 20 ${\mu}m$ trick active silicon and 2 ${\mu}m$ thick thermally grown oxide and piggyback electrostatic principle was used for driving TFMA. The first vibration mode frequency of TFMA was 18.5 kHz which is enough for a recording density of higher than 10 Gb/in$^2$. Its displacement was 1.4 ${\mu}m$ when 15 V dc bias plus 15 V ac sinusoidal driving input was applied and its electrostatic force was 50 N. The fabricated actuator shows 7.51 dB of gain margin and 50.98$^{\circ}$ of phase margin for 2.21 kHz servo-bandwidth.

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The Homologous Region 3 from Bombyx mori Nucleopolyhedrovirus Enhancing the Transcriptional Activity of Drosophila hsp70 Promoter

  • Tang, Shun-Ming;Yi, Yong-Zhu;Zhou, Ya-Jing;Zhang, Zhi-Fang;Li, Yi-Ren;He, Jia-Lu
    • International Journal of Industrial Entomology and Biomaterials
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    • v.9 no.2
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    • pp.235-239
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    • 2004
  • Drosophila melanogaster heat shock protein 70 gene promoter (Dhsp70p) is widely used in transgenic insect to drive exogenous gene, and the homologous region 3 from Bombyx mori nucleopolyhedrovirus (BmNPVhr3) functions as an enhancer for several promoters. To test whether BmNPVhr3 can enhance the Dhsp70ps transcriptional activity, the reporter plasmids, which contain the Dhsp70p, the reporter $\beta$-galactosidase gene with SV40 terminator and BmNPVhr3 fragment, are constructed and transfected into the insect cell lines (Bm-N cells and Sf-21 cells) by lipofectin-mediated method. The results from the transient expression assay show that BmNPVhr3 significantly increases transcriptional activity of Dhsp70p both under the normal condition and under the heat-shock treatment, although the effects are significantly different between in Bm-N cells and in sf-21 cells. The enhancing behavior of BmNPVhr3 on the Dhsp70p is in an orientation-independent manner. Meanwhile, the effects of heat-shock treatment on Dhsp70p alone or Dhsp70p/BmNPVhr3 combination present no significant difference, indicating that BmNPVhr3 only enhances the transcriptional activity of Dhsp70p, but cant alter its characteristic of the response to the heat-shock stress. The above results suggest that the Dhsp70p/BmNPVhr3 combination is more effective one to drive exogenous gene for transgene or stable cell expression system in insects.

Novel Ni-Silicide Structure Utilizing Cobalt Interlayer and TiN Capping Layer and its Application to Nano-CMOS (Cobalt Interlayer 와 TiN capping를 갖는 새로운 구조의 Ni-Silicide 및 Nano CMOS에의 응용)

  • 오순영;윤장근;박영호;황빈봉;지희환;왕진석;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.12
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    • pp.1-9
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    • 2003
  • In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

Pixel Circuit with Threshold Voltage Compensation using a-IGZO TFT for AMOLED

  • Lee, Jae Pyo;Hwang, Jun Young;Bae, Byung Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.594-600
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    • 2014
  • A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

Performances Comparison of Interleaved Converter for Distributed Power System (분산 전원장치를 위한 중첩형 컨버터의 성능 비교)

  • Moon, Gun-Woo;Yoon, Suk-Ho;Kim, Yong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.12 no.3
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    • pp.37-44
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    • 1998
  • This paper compared to the operation performance and efficiency of an interleaved active clap ZVS forward converter and an interleaved ZVS half-bridge converter in distributed power system. The design for the current-mode control circuit of an interleaved active clamp ZVS forward converter is presented. To simplify the gate drive circuits, N-P MOSFETs coupled active clamp method is proposed. An efficiency about 90% for the 50∼100% load range is achieved.

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4181Overcoming the High-current Efficiency Loss Mechanism in GaN-based Light-emitting Diodes

  • Kim, Jong-Gyu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.23.2-23.2
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    • 2011
  • This presentation will include an overview of III-Nitride LED technology, applications, key areas for future improvements, challenges such as efficiency droop. GaN-based high-power light-emitting diodes (LEDs) suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents, a well-known phenomenon commonly referred to as efficiency droop. Although many attempts have been made to uncover this LED's darkest secret, there is still a lack of consensus on the dominant mechanism responsible for this detrimental phenomenon. In this presentation, proposed origins and corresponding solutions to the droop-causing mechanisms will be reviewed and discussed.

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Suppression Control of the Drivetrain-Oscillations of an Electric Vehicle Using Taguchi Method (다구찌 방법을 이용한 전기자동차 구동계의 진동 억제 제어)

  • Kim, Ho-Gi
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.5
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    • pp.463-468
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    • 2009
  • Torsional oscillations of the drivetrain in electric vehicles are generated under rapid driving conditions. These lead to an uncomfortable jerking of the vehicle and an increased stress of the mechanical components. To suppress torsional oscillations, the low pass and notch filters between the torque command from the acceleration pedal and electric motor input torque are suggested. The filter parameters are optimized based on Taguchi method with $L_{18}(3^5)$ orthogonal array. The signal to noise (S/N) ratio mainly depends on slew rate of motor input torque, damping ratio and natural frequency of notch filter. With the proposed suppression control scheme, the S/N ratio is shown to be increased by 4.7dB and the torque overshoot of the drive shaft is reduced to 30%.

Foramtion and Characterization of SiO$_2$ films made by Remote Plasma Enhanced Chemical vapour Deposition (Remote PECVD (RPECVD) SiO$_2$ 막의 형성 및 특성)

  • 유병곤;구진근;임창완;김광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.171-174
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    • 1994
  • The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

Position Control of Electro Hydraulic Actuator (EHA) using an Iterative Learning Control (반복 학습제어를 이용한 전기유압액추에이터의 위치제어)

  • Nam, D.N.C.;Tri, N.M.;Park, H.G.;Ahn, K.K.
    • Journal of Drive and Control
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    • v.11 no.4
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    • pp.1-7
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    • 2014
  • This paper presents the development of a compact position generator to be used for industrial purposes based on a pump controlled Electro-Hydraulic Actuator (EHA), which is closed-loop controlled by an embedded based Iterative PID controller. The controller is designed by combining the PID controller and the iterative learning scheme to perform tracking control for periodically desired references. Control algorithm is implemented on an embedded computer (AD 7011-EVA) which makes the implementation and application in industrial environments easier.

An Analysis of Vibration Attenuation Effect of the different type of Gloves and Drilling Mode (진동모드에 따른 각종 장갑의 방진효과 분석)

  • 황성환;이형일;이동충
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.24 no.69
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    • pp.65-73
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    • 2001
  • The objective of this study is to evaluate the vibration attenuation effects of the different type of gloves and drilling mode while operating a light-weighted powered hand drill. For the experimental design, five different kinds of glove(barehanded cotton partly coated anti-vibration, and open-finger vibration glove) two types of push force level(100N and 200N) and two types of drilling mode(impact and non-impulsive) were considered. Six healthy male subjects were employed to drive screws into a vertically mounted marble plate with a powered hand drill in a randomly ordered experimental conditions. The findings of this study are summarized as follows; (1) It was found that the best combination of overall BMS transmissibility was using impact drilling mode with anti-vibration glove among evaluated experimental conditions (2) The wearing open finger vibration glove in mid-frequency level and anti-vibration glove with impact drill in high-frequency were the best in the result from mean corrected transmissibility equation of ISO 10819.

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