• 제목/요약/키워드: n-type substrate

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MoOx 기반 실리콘 이종접합 고성능 광검출기 (MoOx/Si Heterojunction for High-Performing Photodetector)

  • 박왕희;김준동
    • 한국전기전자재료학회논문지
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    • 제29권11호
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    • pp.720-724
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    • 2016
  • Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

Effects of $N_2$ addition on chemical etching of silicon nitride layers in $F_2/Ar/N_2$ remote plasma processing

  • Park, S.M.;Kim, H.W.;Kim, S.I.;Yun, Y.B.;Lee, N.E.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 춘계학술발표회 초록집
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    • pp.78-79
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    • 2007
  • In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

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Investigation of Photoluminescence and Annealing Effect of PS Layers

  • Han, Chang-Suk;Park, Kyoung-Woo;Kim, Sang-Wook
    • 한국재료학회지
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    • 제28권2호
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    • pp.124-128
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    • 2018
  • N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.

Respiratory Chain-Linked Components of the Marine Bacterium Vibrio alginolyticus Affect Each Other

  • Kim, Young-Jae
    • Journal of Microbiology
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    • 제40권2호
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    • pp.125-128
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    • 2002
  • The aerobic respiratory chain of Vibrio alginolyticus possesses two different kinds of NADH oxidase systems, i.e., an $Na^{+}$-dependent NADH oxidase system and an $Na^{+}$-independent NADH oxidase system. When deamino-NADH, which is the only substrate for the $Na^{+}$-dependent NADH oxidase system, was used as a substrate, the maximum activities of $N^{+}$-dependent NADH: quinone oxidoreductase and $Na^{+}$-dependent NADH oxidase were obtained at about 0.06 M and 0.2 M NaCl, respectively. When NADH, which is a substrate for both $Na^{+}$-dependent and $Na^{+}$-independent NADH oxidase systems was used as a substrate, the NADH oxidase activity had a pH optimum at about 8.0. In cGntrastl when deamino-NADH was used as a substrate, the NADH oxidase activity had a pH optimum at about 9.0. On the other handle inside-out membrane vesicles prepared from the wild-type bacterium generated only a very small $\Delta$pH by the NADH oxidase system, whereas inside-out membrane vesicles prepared from Napl, which is a mutant defective in the $Na^{+}$ pump, generated $\Delta$pH to a considerable extent by the NADH oxidase system. On the basis of the results\ulcorner it was concluded that the respiratory chain-linked components of V. atginotyticus affect each other.

일산화질소 가스 검출을 위한 CuO 박막/ZnO 나노막대 이종접합 구조의 제작 및 특성 평가 (Fabrication and Characterization of CuO Thin Film/ZnO Nanorods Heterojunction Structure for Efficient Detection of NO Gas)

  • 유환수;김효진;김도진
    • 한국재료학회지
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    • 제28권1호
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    • pp.32-37
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    • 2018
  • We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

RF Reactive Sputtering법에 의한 산화주석 박막의 제조 및 특성 (Characterization and Fabrication of Tin Oxide Thin Film by RF Reactive Sputtering)

  • 김영래;김선필;김성동;김은경
    • 한국재료학회지
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    • 제20권9호
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    • pp.494-499
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    • 2010
  • Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

MBE법으로 성장된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상 (Improvement of HgCdTe Qualities grown by MOVPE using MBE grown CdTe/Si as Substrate)

  • 김진상;서상희
    • 센서학회지
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    • 제12권6호
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    • pp.282-288
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    • 2003
  • MBE 방법으로 Si 기판위에 성장된 CdTe(211) 박막위에 MOVPE 법으로 HgCdTe 박막을 성장하였다. 성장된 박막의 표면은 hillock 등의 결함이 없는 매우 균일한 형상을 보였다. HgCdTe 박막표면의 EPD(etch pit density) 및 (422) 결정면의 이중 결정 x-선 회절 피크의 반치폭으로 본 결정성은 GaAs 기판위에 성장된 HgCdTe 박막에 비하여 우수하였다. GaAs 기판 위에 MOVPE 법으로 성장된 HgCdTe는 기판처리 과정에서 유입된 p-형 불순물로 인해 p-형 전도성을 나타내었으나 (211)CdTe 기판 위에 성장된 박막은 77K에서 $8{\times}10^{14}/cm^3$의 운반자 농도를 갖는 n-형 전도성을 보였다. 본 연구의 결과는 최근 요구되고 있는 $1024{\times}1024$급 이상의 화소를 갖는 대면적 HgCdTe 적외선 소자 제작에 널리 적용될 것으로 판단된다.

Two dimensional tin sulfide for photoelectric device

  • Patel, Malkeshkumar;Kim, Joondong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.389.1-389.1
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    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

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광 다이오드를 가진 Microfluidic LOC 시스템 제작 (fabrication of the Microfluidic LOC System with Photodiode)

  • 김현기;신경식;김용국;이상렬;김태송;양은경;주병권
    • 한국전기전자재료학회논문지
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    • 제16권12호
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    • pp.1097-1102
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    • 2003
  • In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

수치모델을 이용한 ICP-CVD 장치의 증착 균일도 해석 (Numerical Modeling of Deposition Uniformity in ICP-CVD System)

  • 주정훈
    • 한국표면공학회지
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    • 제41권6호
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    • pp.279-286
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    • 2008
  • Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.