Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Improvement of HgCdTe Qualities grown by MOVPE using MBE grown CdTe/Si as Substrate

MBE법으로 성장된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상

  • 김진상 (한국과학기술연구원 박막기술연구센터) ;
  • 서상희 (한국과학기술연구원 21c 프론티어사업 나노소재기술개발사업단) ;
  • Published : 2003.11.30
Download PDF
⟨ Previous Next ⟩

Abstract

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

MBE 방법으로 Si 기판위에 성장된 CdTe(211) 박막위에 MOVPE 법으로 HgCdTe 박막을 성장하였다. 성장된 박막의 표면은 hillock 등의 결함이 없는 매우 균일한 형상을 보였다. HgCdTe 박막표면의 EPD(etch pit density) 및 (422) 결정면의 이중 결정 x-선 회절 피크의 반치폭으로 본 결정성은 GaAs 기판위에 성장된 HgCdTe 박막에 비하여 우수하였다. GaAs 기판 위에 MOVPE 법으로 성장된 HgCdTe는 기판처리 과정에서 유입된 p-형 불순물로 인해 p-형 전도성을 나타내었으나 (211)CdTe 기판 위에 성장된 박막은 77K에서 $8{\times}10^{14}/cm^3$의 운반자 농도를 갖는 n-형 전도성을 보였다. 본 연구의 결과는 최근 요구되고 있는 $1024{\times}1024$급 이상의 화소를 갖는 대면적 HgCdTe 적외선 소자 제작에 널리 적용될 것으로 판단된다.

Keywords

References

  1. T.J. de Lyon. J.E. Jensen. M.D. Gorwitz. C.A. Cockrum. S.M. Johnson. and G.M. Vensor. "MBE Growth of HgCdTe on Silicon Substrates for Large-Area Infrared Focal Plane Arrays: A Review of Recent Progress,' J. Electron. Mater. 28, (1999)705 https://doi.org/10.1007/s11664-999-0058-2
  2. K.D. Maranowski. J.M. Peterson, S.M. Johnson, J.B. Varesi. A.C.Childs, RE. Bornfreund, A.A. Buell. W.A. Radford, T.J. de Lyon, and J .E. Jensen, 'MBE Growth of HgCdTe on Silicon Substrates for Large Format MWIR Focal Plane Arrays,' J. Electron. Mater. 30, (2001) 619 https://doi.org/10.1007/BF02665844
  3. R Ashokan. N.K Dhar, B. Yang. A. Akhiyat. T.S. Lee. S. Rujifawat. S. Yousuf, and S. Sivananthan, 'Variable Area MWIR Diodes on HgCdTe/Si Grown by Molecular Beam Epitaxy,' J. Electron. Mater. 29, (2000) 636 https://doi.org/10.1007/s11664-000-0197-y
  4. Sang-Hee Suh. .Jin-Sang Kim, Hyurig Joon Kim. and .Jong-Hyeong Song. 'Control of hillock formation during MOVPE growth of HgCdTe by suppressing the pre-reaction of the Cd precursor with Hg.' J. Crystal Growth, 236 (2002) 119 https://doi.org/10.1016/S0022-0248(01)02224-2
  5. J. E. Hails, D. J. Cole-Hamilton and J. Giess, 'The origin of hillock in (Hg.Cd)Te grown by MOVPE.' J. Electron. Mater., 27 (1998) 624 https://doi.org/10.1007/s11664-998-0026-2
  6. J. Tunnicliffe, S.J.C. Irvine, O.D. Dosser. J.B. Mullin, ''A new MOVPE technique for the growth of highly uniform CMT.' J. Crystal Growth, 68 (1984) 245 https://doi.org/10.1016/0022-0248(84)90423-8
  7. S. Rujirawat, L.A. Almeida, Y.P. Chen, S. Sivananthan. and D.J. Smith. 'High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy.' Appl. Phys. Lett. 71 (1997) 1810 https://doi.org/10.1063/1.119406
  8. W.J. Everson, C.K Ard. J.L. Sepich, B.E.Dean, and H.F. Schaake. 'New defect etchant for CdTe and HgCdTe,' J. Electron. Mater. 24 (1995) 505 https://doi.org/10.1007/BF02657954
  9. T.J. de Lyon. R.D. Rajavel, J.E. Jensen. O.W. Wu, S.M. Johnson, C.A. Cockrum and G.M. Venzor. 'Polarity etchant for CdTe and HgCdTe,' J. Electron. Mater. 25 (1996) 134
  10. 김진상, 서대원, 서상희. ' KOH 용액으로 처리된 GaAs 기판위에 MOVPE 법으로 성장된 HgCdTe 박막의 전기적 특성,' 새 물리, Vol. 43. No. 2. (2001) 94