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DOI QR Code

MoOx/Si Heterojunction for High-Performing Photodetector

MoOx 기반 실리콘 이종접합 고성능 광검출기

  • Park, Wang-Hee (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University) ;
  • Kim, Joondong (Photoelectric and Energy Device Application Lab, Multidisciplinary Core Institute for Future Energies, Incheon National University)
  • 박왕희 (인천대학교 차세대 융합에너지 중점연구소 광전에너지소자연구실) ;
  • 김준동 (인천대학교 차세대 융합에너지 중점연구소 광전에너지소자연구실)
  • Received : 2016.07.14
  • Accepted : 2016.10.07
  • Published : 2016.11.01

Abstract

Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

Keywords

References

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