• Title/Summary/Keyword: MoOx

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Monooxo-bridged Binuclear Molybdenum (V) Complexes (IV) (한 개 산소 가교 이핵몰리브덴 (V) 착물 (제4보))

  • Sang Oh Oh;Jong Dal Rhee
    • Journal of the Korean Chemical Society
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    • v.26 no.2
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    • pp.81-87
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    • 1982
  • The monooxo-bridged binuclear molybdenum(V) complexes, $Mo_2O_3(NCS)_4(Bipy)_2\;(Bipy = bipyridine),\;Mo_2O_3(NCS)-4(Phen)-2$ (Phen = 1,10-phenanthroline), and $Mo_2O_3(NCS)_4(Ox)_2(OxH)_2$ (Ox = oxinato and OxH = oxine) have been prepared. Their electronic and IR spectra, electric conductivity, and magnetic susceptibility were measured. From the results all of th complexes turned out to be electroneutral dimers with about 0.5 BM, and in the oxine complex, $Mo_2O_3(NCS)_2(Ox)_2(OxH)_2$, the oxine seems to bind partly as monodentate and partly as bidentate molecule.

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All Carrier Ohmic-Contacts을 이용한 유기 발광 다이오드의 성능 향상 연구

  • Park, Jin-U;Im, Jong-Tae;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.168-168
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    • 2012
  • 본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

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Oxygen Ring Formation Reaction of Mono-Oxo Bridged Binudear Molybdenum (Ⅴ) Complex (Ⅲ). Reaction of $[Mo_2O_3(Ox)_2(OxH)_2(NCS)_2]$ with solvent Water in Binary Aqueous Mixtures (한개의 산소다리를 가진 몰리브덴(V) 착물의 산소고리화 반응 (제 3 보). 2 성분 혼합용매에서 용매물과 $[Mo_2O_3(Ox)_2(OxH)_2(NCS)_2]$의 반응)

  • Sang Oh Oh;Huee Young Seok
    • Journal of the Korean Chemical Society
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    • v.32 no.6
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    • pp.528-535
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    • 1988
  • The rates of oxygen ring formation of $[Mo_2O_3(Ox)_2(OxH)_2(NCS)_2]$ have been investigated spectrophotometric method in binary aqueous mixtures. Temperature was $20^{\circ}C$ to $40^{\circ}C$ and pressure was varied up to 1500 bar. The observed rate constants are increased by hydrogen ion and decreased by thiocyanate. The more increasing of co-solvents dielectric constant, the more stable intermediate is formed. The observed rate constant is given by, $k_{obs}^{-1} = k^{-1} (1 + K^{-1}[H_2O]^{-1}) All activation parameters are positive values. The oxygen ring formation of [Mo_2O_3(Ox)_2(OxH)_2(NCS)_2]$ is believed to be a interchange-dissociative mechanism..

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Heterojunction Solar Cell with Carrier Selective Contact Using MoOx Deposited by Atomic Layer Deposition (원자층 증착법으로 증착된 MoOx를 적용한 전하 선택 접합의 이종 접합 태양전지)

  • Jeong, Min Ji;Jo, Young Joon;Lee, Sun Hwa;Lee, Joon Shin;Im, Kyung Jin;Seo, Jeong Ho;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.29 no.5
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    • pp.322-327
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    • 2019
  • Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

MoOx/Si Heterojunction for High-Performing Photodetector (MoOx 기반 실리콘 이종접합 고성능 광검출기)

  • Park, Wang-Hee;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.11
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    • pp.720-724
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    • 2016
  • Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

Aerobic Degradation of Tetrachloroethylene(PCE) by Pseudomonas stutzeri OX1

  • Ryoo, Doohyun;Shim, Hojae;Barbieri, Paola;Wood, Thomas K.
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2000.11a
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    • pp.207-208
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    • 2000
  • Since trichloroethylene (TCE), dichloroethylene (DCE), and vinyl chloride (VC) arise from anaerobic degradation of tetrachloroethylene (PCE) and TCE, there is interest in creating aerobic remediation systems that avoid the highly toxic VC and cis-DCE which predonominate in anaerobic degradation. However, it seemed TCE could not be degraded aerobically without an inducing compound (which also competitively inhibits TCE degradation). It has been shown that TCE induces expression of both the toluene dioxygenase of p. putida F1 as well as toluene-p-monooxygenase of P.mendocina KRI. We investigated here the ability of PCE, TCE, and chlorinated phenols to induce toluene-o-xylene monooxygenase (ToMO) from P.stutzeri OX1. ToMO has a relaxed regio-specificity since it hydroxylates toluene in the ortho, meta, and para positions; it also has a broad substrate range as it oxidizes o-xylene, m-xylene, p-xylene, toluene, benzene, ethylbenzene, styrene, and naphthalene; chlorinated compounds including TCE, 1, 1-DCE, cis-DCE, trans-DCE, VC, and chloroform : as well as mixtures of chlorinated aliphatics (Pseudomonas 1999 Maui Meeting). ToMO is a multicomponent enzyme with greatest similarity to the aromatic monooxygenases of Burkholderia pickettii PKO1 and P.mendocina KR1. Using P.sturzeri OX1, it was found that PCE induces P.mendocina KR1 Using P.situtzeri OX1, it was found that PCE induces ToMO activity measured as naphthalene oxygenase activity 2.5-fold, TCE induces 2.3-fold, and toluene induces 3.0 fold. With the mutant P.stutzeri M1 which does not express ToMO, it was also found there was no naphthalene oxygenate activity induced by PCE and TCE; hence, PCE and TCE induce the tow path. Using P.putida PaW340(pPP4062, pFP3028) which has the tow promoter fused to the reporter catechol-2, 3-dioxygenase and the regulator gene touR, it was determined that the tow promoter was induced 5.7-, 7.1-, and 5.2-fold for 2-, 3-, 4-chlorophenol, respectively (cf. 8.9-fold induction with o-cresol) : however, TCE and PCE did not directly induce the tou path. Gas chromatography and chloride ion analysis also showed that TCE induced ToMO expression in P.stutzeri OX1 and was degraded and mineralized. This is the first report of significant PCE induction of any enzyme as well as the first report of chlorinated compound induction of the tou operon. The results indicate TCE and chlorinated phenols can be degraded by P.stutzeri OX1 without a separate inducer of the tou pathway and without competitive inhibition.

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Electrochemical Properties of Molydenum (V) Complexes with Multidentate Ligands Containing Nitrogen or / and Oxygen Donor Atom (질소, 산소 주게원자 리간드를 가진 몰리브덴 (V) 착물의 전기화학적인 성질)

  • Sang Oh OH;Soo Gyun ROH
    • Journal of the Korean Chemical Society
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    • v.33 no.5
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    • pp.484-495
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    • 1989
  • Reactions of $(Et_4N)_2[MoOCl_5]$ with multidentate ligands containing nitrogen or/and oxygen donor atom (EDTA, DTPA, IDA, CyDTA, OX) produce a series of binuclear molybdate (V) complexes. The prepared Mo (V) complexes has been identified by Elemental Analysis, Infrared Spectra, Proton Magnetic Resonance Spectra, and Electronic Spectra. The electrochemical reduction mechanism has been studied by Cyclic voltammetry, Controlled Potential Coulometry, and Spectrophotometry in pH 3.571-10.375 acetate, borate, phosphate/sodium hydroxide, phosphate, ammonium/ammonia buffers. The cyclic voltammogram of the Mo-EDTA, DTPA, IDA, CyDTA complexes at pH < ca. 6.00 have shown two reduction waves. The first reduction wave shows two electron process and the second reduction wave shows two electron process. The cyclic voltammogram of the Mo-EDTA, DTPA, IDA, CyDTA complexes at pH < ca. 8.00 has shown one reduction wave. This reduction wave show four electron process. The cyclic voltammogram of the Mo-OX complex at pH < ca. 7.2 has shown one reduction wave. This reduction wave show four electron process.

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Surface characteristics of Molybdenum Oxide Films Prepared by Oxidation Thermal Treatment Method (산화 열처리법에 의해 제작된 산화 몰리브데늄 박막의 표면특성 고찰)

  • Kim, Sang-Gon;Sung, Youl-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.3
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    • pp.57-62
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    • 2014
  • In this work, molybdenum oxide films were fabricated by heat-treatment method. Fundamental surface characteristics of molybdenum oxide films were investigated using XRD and Raman spectroscopy. From the results, the optimum MoOx films could be obtained under the conditions of thermal treatment temperature of $550^{\circ}C$, oxidation time of 30 minutes and oxygen flow rate of 250sccm. The thermal treatment method offers a simple and effective route for the synthesis of uniform $MoO_3$ films.

Improvement of source-drain contact properties of organic thin-film transistors by metal oxide and molybdenum double layer

  • Kim, Keon-Soo;Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.270-271
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    • 2008
  • The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

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