• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.107-112
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• 1999

The ZnSe/GaAs epilayers were grown by RF reactive sputtering. In order to obtain the optimum condition of the growth, we have studied the dependence of Ar pressure, input power of sputter, temperature of substrate, and the distande between substrate and target. Through the observation of the grown epilayer via electronic microscope, we confirmed that the layer's surface was uniform and the boundary of the substrate and the layer was well defined. The defotmation of lattice distortion and the distortion ratio were obtained by DCRC measurements. From mrasurements of photoluminescence, in the ZnSe/GaAs sample without injection of $N_2$gas, we found that the intensity of bound exciton $I_2$is stronger than that of $I_1$and the bound exiton $I_1$represents the deep acceptor level, $I_1\;^d$. On the other hand, in the ZnSe/GaAs sample with injection of$N_2$gas, the peak of$I_1$ was much higher than that of the $I_2$and the half width appeared to be narrow. We concluded that the p-type of ZnSe/GaAs epilayer was grown successfully, because of stronger peak of the bound exciton $I_1$due to the $N_2$dopping.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.23-27
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• 2017

A series of $CeO_2-TiO_2$ composite samples with different Ce/Ti molar ratios were prepared by the paper template. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to confirm a face-centered cubic lattice of $CeO_2$ with Ce/Ti =8:2 or 9:1 and a two phase mixture of anatase titania and face-centered cubic ceria with Ce/Ti = 7 : 3. The field emission scanning electron microscopy (FESEM) results suggest that the products are micron braid structures consisting of fibers with diameters in a range of $1-6{\mu}m$ and lengths of several hundred micrometers. $N_2$ absorption-desorption testing shows that the composite at Ce/Ti molar fraction of 8 : 2 has the largest BET surface area (about $81m^2{\cdot}g^{-1}$). Compared to the pure $CeO_2$ sample, the composites show superior catalytic activity for $H_2$ reduction and CO oxidation. For the micron braid structure $CeO_2-TiO_2$ composite (Ce/Ti = 8 : 2), due to the high surface area and the solid solution with appropriate $Ti^{4+}$ incorporation, the CO conversion at about $280^{\circ}C$ was above 50% and at $400^{\circ}C$ was 100%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.824-830
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• 2015

The influence of phosphorous precursors, $NH_4H_2PO_4$, $(NH_4)_2HPO_4$, $H_3PO_4$, $(C_2H_5)_3PO_4$, and $P_2O_5$, on the catalytic performance of the $BiFe_{0.65}MoP_{0.1}$ catalysts in the oxidative dehydrogenation of 1-butene to 1,3-butadiene was studied. The catalysts were characterized by XRD, $N_2$-sorption, ICP, SEM and TPRO analyses. It was not observed big difference on the physical properties of catalysts in accordance with used different phosphorous precursors, however, the catalytic performance was largely depended on the nature of the phosphorous precursors. Of various precursors, the $BiFe_{0.65}MoP_{0.1}$ oxide catalyst, which was prepared from a phosphoric acid precursor, showed the best catalytic performance. Conversion and yield to butadiene of the catalyst showed 79.5% and 67.7%, respectively, after 14 h on stream. The cation of phosphorous precursors was speculated to affect the lattice structure of the catalysts during catalyst preparation and this difference was influenced on the re-oxidation ability of the catalysts. Based on the results of TPRO, it was proposed that the catalytic performance could be correlated with re-oxidation ability of the catalysts.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.73-80
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• 1996

The single crystal growth has been carried out with the newly designed 1-T HB(single temperature zone horizontal Bridgman) system for GaAs crystals of 2 inch diameter doped with Si, Zn or undoped. With this method, incidence probability of single crystallinity was shown to be 0.73. Lattice defects evaluated from EPD(etch pit density) measurement were in the range of 5,000-20,000/cm2, dependent upon the doping condition. For the undoped GaAs crystals, carrier concentrations from the Hall measurement were ∼1×1016/cm3 at the seed part, which were less than half the concentrations of double of triple temperature zone(2-T, 3-T) HB grown crystals. By the 1-T HB method, therefore, GaAs crystals can be grown successfully with better yield and higher purity.

• Advances in nano research
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• v.15 no.1
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• pp.1-13
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• 2023

Ti₃C₂T_x MXene, a 2D material, is known to exhibit unique characteristics that are strongly dependent on surface termination groups. Here, we developed a novel annealing approach with Ca as a reducing agent to simultaneously remove F and O groups from the surface of multilayered MXene powder. Unlike H₂ annealing that removes F effectively but has difficulty in removing O, annealing with Ca effectively removed both O and F. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy revealed that the proposed approach effectively removed F and O from the MXene powder. The results of O/N analyses showed that the O concentration decreased by 57.5% (from 2.66 to 1.13 wt%). In addition, XPS fitting showed that the volume fraction of metal oxides (TiO₂ and Al₂O₃) decreased, while surface termination groups (-O and -OH) were enhanced, which could increase the hydrophilic and adsorption properties of the MXene. These findings suggest that when F and O are removed from the MXene powder, the interlayer spacing of its lattice structure increases. The proposed treatment also resulted in an increase in the specific surface area (from 5.17 to 10.98 m²/g), with an increase in oxidation resistance temperature in air from ~436 to ~667 ℃. The benefits of this novel technology were verified by demonstrating the significantly improved cyclic charge-discharge characteristics of a lithium-ion battery with a Ca-treated MXene electrode.

• Tissue Engineering and Regenerative Medicine
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• v.15 no.6
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• pp.711-719
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• 2018

BACKGROUND: Collagen organization within tissues has a critical role in wound regeneration. Collagen fibril diameter, arrangements and maturity between connective tissue growth factor (CTGF) small interfering RNA (siRNA) and mismatch scrambled siRNA-treated wound were compared to evaluate the efficacy of CTGF siRNA as a future implement for scar preventive medicine. METHODS: Nanocomplexes of CTGF small interfering RNA (CTGF siRNA) with cell penetrating peptides (KALA and $MPG^{{\Delta}NLS}$) were formulated and their effects on CTGF downregulation, collagen fibril diameter and arrangement were investigated. Various ratios of CTGF siRNA and peptide complexes were prepared and down-regulation were evaluated by immunoblot analysis. Control and CTGF siRNA modified cells-populated collagen lattices were prepared and rates of contraction measured. Collagen organization in rabbit ear 8 mm biopsy punch wound at 1 day to 8 wks post injury time were investigated by transmission electron microscopy and histology was investigated with Olympus System and TS-Auto software. CONCLUSION: CTGF expression was down-regulated to 40% of control by CTGF siRNA/KALA (1:24) complexes (p<0.01) and collagen lattice contraction was inhibited. However, down-regulated of CTGF by CTGF $siRNA/MPG^{{\Delta}NLS}$ complexes was not statistically significant. CTGF KALA-treated wound appeared with well formed-basket weave pattern of collagen fibrils with mean diameter of $128{\pm}22nm$ (n = 821). Mismatch siRNA/KALA-treated wound showed a high frequency of parallel small diameter fibrils (mean $90{\pm}20nm$, n = 563). CONCLUSION: Controlling over-expression of CTGF by peptide-mediated siRNA delivery could improve the collagen orientation and tissue remodeling in full thickness rabbit ear wound.

• Advances in materials Research
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• v.13 no.3
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• pp.211-220
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• 2024

Polylactic acid or polylactide (PLA) is a biodegradable thermoplastic that can be produced from renewable material to create various components for industrial purposes. In 3D printing technology, PLA is used due to its good mechanical, electrical, printing properties, environmentally friendly and non-toxic properties. However, the physical properties and excellent electrical insulation properties of PLA have limited its application. In this study, with the carbon black (CB) as filler added into PLA, the lattice spacing and morphology were investigated by using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The physical properties of PLA-carbon composite were evaluated by using tensile test, shore D hardness test and density and voids measurement. Impedance test was conducted to investigate the electrical properties of PLA-Carbon composites. The results demonstrate that the inclusion of carbon black as filler enhances the physical properties of the PLA-carbon composites, including tensile properties, hardness, and density. The addition of carbon black also leads to improved electrical conductivity of the composites. Better enhancement toward the electrical properties of PLA-carbon composites is observed with 1wt% of carbon black in N774 grade. The N550 grade with 2wt% of carbon black shows better improvement in the physical properties of PLA-carbon composites, achieving 10.686 MPa in tensile testing, 43.330 in shore D hardness test, and a density of 1.200 g/cm3 in density measurement. The findings suggest that PLA-carbon composites have the potential for enhanced performance in various industrial applications, particularly in sectors requiring improved physical and electrical properties.