• Korean Journal of Mineralogy and Petrology
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• v.35 no.3
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• pp.273-281
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• 2022

Mantle heterogeneity is closely related to the distribution and circulation of volatile components in the Earth's interior, and the behavior of volatiles in the mantle strongly influences the rheological properties of silicate rocks. In mantle xenoliths, these physicochemical properties of the upper mantle can be recorded in the form of microstructures and fluid inclusions. In this paper, I summarized and reviewed the results of previous studies related to the characteristics of microstructures and fluid inclusions from peridotite xenoliths beneath the Rio Grande Rift (RGR) in order to understand the evolution and heterogeneity of upper mantle. In the RGR, the mantle peridotites are mainly reported in the rift axis (EB: Elephant Butte, KB: Kilbourne Hole) and rift flank (AD: Adam's Diggings) regions. In the case of the former (EB and KB peridotites), the type-A lattice preferred orientation (LPO), formed under low-stress and low-water content, was reported. In the case of the latter (AD peridotites), the type-C LPO, formed under low-stress and high-water content, was reported. In particular, in the case of AD peridotites, at least two fluid infiltration events, such as early (type-1: CO₂-N₂) and late (type-2: CO₂-H₂O), have been recorded in orthopyroxene. The upper mantle heterogeneity recorded by these microstructures and fluid inclusions is considered to be due to the interaction between the North American plate and the Farallon plate.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.403-408
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• 1994

Dielectric and structural properties of $Ba_{1-x}$(Z $n_{1}$3/T $a_{2}$3/) $O_{3}$+1 mol% Mn $O_{2}$ (x=0, 0.01, 0.02, 0.03, 0.04) ceramics was investigated at microwave frequencies. With $Ba_{+2}$ shortage, the sinterability and the unloaded Q( $Q_{u}$) were much improved, and the ordering in B site and the lattice distortion was greatly enhanced and the structure approached the completely ordered structure. $Q_{u}$ was strongly correlated with these factors such as ordering ratio, lattice distortion and sinterability, and had the maximum value of 7500 at x=0.01. The dielectric constant was near 30 and the temperature coefficient of the resonant frequency was 2 ppm/.deg. C at x=0.01.1.1.1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.424-427
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• 2003

We have investigated the microstructural analysis of epitaxial lateral overgrowth (ELO), pendeoepitaxy (PE), and superlattice structures used as technology for the reduction of structural defects like dislocation in nitride semiconductors using transmission electron microscopy. We confirmed that the regrowth process such as ELO and PE is very effective technique on the reduction of threading dislocation (less than $10^6/cm^2$) in the specific area. However, to decrease the defect density in the whole nitride films and the suppress the generation of defect by regrowth, we should find the optimized conditions. Besides, the process using double PE and AlGaN/GaN superlattice structure showed no effect on the defect reduction up to now.

• Journal of Ocean Engineering and Technology
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• v.5 no.2
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• pp.216-216
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• 1991

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.224-225
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• 2003

이 연구에서는 광결정 (photonic crystal) 박막 (slab) 위에 제작된 막대형 공진기의 공진모드의 특성을 보고한다. 먼저 3차원 FDTD 방법을 이용하여 각각의 공진 모드들의 모드 형태, 공진주파수, 품위값(Q factor) 등을 구하였다. 광결정 격자의 주기가 $\alpha$ 일 때, 슬랩의 두께는 0.4 $\alpha$ , 구멍의 반지름은 0.35 $\alpha$ 로 하였다. 슬랩의 굴절률 (n) 은 실험에서 사용한 InP의 1.55 $\mu$m 에서의 굴절률 값인 3.4 로 정하였다. (중략)

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.1-5
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• 1998

Acicular Fe-Co alloy particles are one of the candidates for high-density magnetic recording media. We examined the effects of Co additions on the magnetic properties of Fe-Co alloy particles by using M$\'{o}$ssbauer spectroscopy, TEM, and X-ray diffraction. Acicular $Fe_n$Co (n=5, 4, 3, 2) alloy particles coated with silica, were prepared by a chemical coprecipitation method and subsequent H $_2$ reduction. The crystal structure was found to be cubic in all n ranges. The lattice constant $a_0$ decreases with increasing Co contents. Analysis of $^{57}Fe$ M\'{o}$ssbauer effect data in terms of the local configurations of Co atoms has permitted the influence of magnetic hyperfine interactions to be monitored.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.193.1-193.1
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• 2015

실리콘 (Si) 기판 위에 고품질의 갈륨질화물 (GaN) 박막을 성장시키기 위한 노력이 계속되고 있다. 실리콘 기판은 사파이어 기판 보다 경제적인 측면에서 유리하고, 실리콘 직접화 공정에 GaN 소자를 쉽게 접목 가능하다는 장점이 있다. GaN 박막은 2차원 전자 가스형성을 통한 고속소자, 직접 천이형 밴드갭을 이용한 발광소자 및 고전압 소자로써 활용 가능한 물질이다. 종래에는 Si(100) 및 Si(111) 기판 위에 GaN 박막 성장에 대한 연구가 주로 진행되었다. 하지만 대칭성과 격자 불일치도 등 결정학적 특성을 고려할 때 Si(100) 기판 위에 고품질의 GaN 박막을 성장시키는 것은 쉽지 않다. Si(111) 기판은 실리콘 소자 직접화 공정에 적합하지 못한 단점을 가지고 있다. 반면, 최근 Si(110) 기판 위에서 비등방적 변형 제어를 통한 고품질 GaN 박막 성장이 보고 되어 실리콘 집적 소자와 결합한 고전압 소자 및 고속소자 구현에 관한 연구가 진행되고 있다. 본 연구에서는 투과전자현미경 연구를 바탕으로 Si(110) 기판 위에 성장된 GaN의 미세구조에 관한 연구를 소개한다. 열팽창계수의 차이에 의한 GaN 박막 내 결함 생성을 줄이기 위하여 AlN 완충층이 사용되었다. GaN 박막을 암모니아 ($NH_3$) 유량이 다른 조건에서 성장시킴으로써 GaN 박막 미세구조의 암모니아 유량 의존성에 관한 연구를 진행하였다. GaN 박막에서 투과전자현미경 연구와 X-ray 회절 연구를 통하여 결함 거동 및 결정성을 확인하였다. $NH_3$ 유랑이 증가함에 따라 GaN의 성장 거동이 3차원에서 2차원으로 변화됨을 관찰하였다. 또한, 전위밀도의 증가도 확인되었다. $NH_3$ 유량이 낮은 경우 GaN 전위는 AlN와 GaN 경계에 주로 위치하고 GaN 표면 근처에는 전위밀도가 감소하였으나, $NH_3$ 유량이 높을 경우 GaN 박막 표면까지 전위가 관통됨을 확인하였다.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.30-33
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• 2007

The $FeIn_2S_4$ exhibits an inverse spinel which Fe ions are occupied to the octahedral(B) site, while In ions are occupied to both the tetrahedral(A) and the octahedral(B) site. The $N\'{e}el$ temperature($T_N$) is determined to be 13 K. The effective moment of $FeIn_2S_4$ found to be $5.094{\mu}_B$ from the fit of Curie-Weiss inverse susceptibility for the temperature range over $T_N$, implying angular momentum contribution. The angular momentum contribution is shown in $M\"{o}ssbauer$ spectra for the antiferromagnetic ordering region($T{\leq}\;13K$), too. A weak $Fe^{2+}(B)-S^2-Fe^{2+}(B)$ interaction is responsible for a low $N\'{e}el$ temperature($T_N$) in $FeIn_2S_4$ system. The temperature dependence of electric quadrupole interaction is explained by z-axial crystalline field energy.