• Title/Summary/Keyword: multilayer deposition

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D. C. 마그네트론 스퍼터링에 의한 증착조건이 TiN다층박막의 밀착력에 미치는 영향 (The effect of deposition conditions on the adhesion strength of TiN multilayer by D. C. magnetron sputtering)

  • 김선규;유정광;이건환;권식철
    • 한국표면공학회지
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    • 제29권4호
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    • pp.261-267
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    • 1996
  • The characteristics and adhesion strength of TiN layer deposited by D. C. magnetron sputtering were investigated. Three types of TiN layers were deposited on STS304 stainless steel. Scratch tests were performed to determine the effect of deposition temperature, the thickness of coated TiN layer and the titanium inter-layer on the adhesion strength. TiN multilayer with titanium inter-layer showed the highest critical load in the deposition temperature range of $25^{\circ}C$ to $300^{\circ}C$. Adhesion strength of TiN multilayer with titanium inter-layer was raised from 15N to 20N by raising deposition temperature from $25^{\circ}C$ to $400^{\circ}C$. Adhesion strength was raised from 18N to 38N by increasing the thickness of outer layer of TiN multilayer from 2.1 $\mu\textrm{m}$ to 9.5 $\mu\textrm{m}$.

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Se, As 및 Te를 이용한 고감도 다층 광도전막의 제작 및 그 응용 (Fabrication of High Sensitive Photoconductive Multilayer Using Se,As and Te and its Application)

  • 박기철;이건일;김기완
    • 대한전자공학회논문지
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    • 제25권4호
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    • pp.422-429
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    • 1988
  • The photoconductive multilayer of Se-As(hole blocking layer)/Se-As-Te (photoconductive layer) /Se-As (layer for supporiting hole transport)/Se-As(layer or controlling total capacitance)/Sb2S3(electron blocking layer) was fabricated and its electrical and optical properties were investigated. The photoconductive multilayer is made of evaporated a-Se as the base material, doped with As and Te to prevent the crystallization of a-Se and to enhance red sensitivity, respectively. The multilayer with good image reproducibility has the following deposition condition. The first layer has the thickness of 250\ulcornerat the deposition rate of 250\ulcornersec. The second layer has the thickness of 800\ulcornerat the deposition rate of 250\ulcornersec. The third layer has the thickness of 125\ulcornerat the deposition rate of 250\ulcornersec. The fourth layer has the thickness of 1700\ulcornerunder the Ar gas ambient of 50x10**-3torr. The image pick-up tube, employing this multilayer demonstrates the following characteristics. The photosensitivity is 0.8, the resolution limit is above 300TV line, and the decay lag is about 7%. And spectral response convers the whole visible range. Therfore the application to color TV camera is expected.

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The Analysis of Underpotential Deposition by Multilayer Adsorption Model

  • Lee, J.B.;Duby, Paul F.
    • 한국표면공학회지
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    • 제27권6호
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    • pp.335-339
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    • 1994
  • The underpotential deposition of zinc was investigated on carbon steel and nickel. The relationship be-tween the deposition potentials and the corresponding amounts of charge for deposited layers shows a very similar trend to the multilayer adsorption mechanism. The experimental results fit a mathematical model de-rived on the basis of the BET equation for the underpotential deposition.

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Post Deposition Annealing Effect on the Structural, Electrical and Optical Properties of ZnO/Ag/ZnO Thin Films

  • Kim, Daeil
    • 열처리공학회지
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    • 제25권2호
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    • pp.85-89
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    • 2012
  • Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

DEPENDENCE OF STRUCTURAL AND MAGNETIC PROPERTIES ON DEPOSITTION ANGLE IN EVAPORATED Co/Pt MULTILAYER THIN FILMS

  • Moon, Ki-Seok;Shin, Sung-Chul
    • 한국자기학회지
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    • 제5권5호
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    • pp.465-469
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    • 1995
  • We have investigated the effects of deposition angle on structural and magnetic properties of e-beam evaporated ${(4-{\AA}\;Co/9.2-{\AA}\;Pt)}_{23}$ multilayer thin films prepared on tilted substrates. It was found that the [111] crystallographic orientations of the multilayer thin films were not aligned with colummar growth orientations and they were remained to be normal to the substrate planes even though the deposition angle was severely oblique up to $60^{\circ}$. The analysis of the torque curve reveal that the intrinsic anisotropy energy was monotonically decreased with the deposition angle but the easy axis orientation parallel to the substrate normal was not much influenced by deposition angle.

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PLD법으로 제작된 Phosphorus를 도핑한 ZnO 박막의 다층 구조 도입에 따른 영향 (The Effects of Phosphorus Doped ZnO Thin Films with Multilayer Structure Prepared by Pulsed Laser Deposition Method)

  • 임성훈;강홍성;김건희;장현우;김재원;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.127-130
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    • 2005
  • The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

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다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성 (Characteristics of Ga-doped ZnO transparent thin films by using multilayer)

  • 김봉석;황현석;이규일;정규원;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.313-314
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    • 2007
  • Ga-doped ZnO(GZO) multilayer coatings were prepared on glass by DC sputtering. Optimization of the deposition conditions of both AZO and Au layers were performed for better electrical and optical characteristics. The properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibits low resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77%. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

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Chemical Solution Deposition 방법을 이용한 BiFeO3/Pb(Zr0.52Ti0.48)O3 다층박막의 전기적 특성에 대한 연구 (Ferroelectric, Leakage Current Properties of BiFeO3/Pb(Zr0.52Ti0.48)O3 Multilayer Thin Films Prepared by Chemical Solution Deposition)

  • 차정옥;안정선;이광배
    • 한국진공학회지
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    • 제19권1호
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    • pp.52-57
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    • 2010
  • $BiFeO_3(BFO)/Pb(Zr_{0.52}Ti_{0.48})O_3$(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/$SiO_2$/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트 (perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 kV/cm에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 $44.3{\mu}C/cm^2$이었으며, 항전계($2E_c$) 값은 681.4 kV/cm였다.

p-PDA/AA 혼합막의 누적전이와 응답특성 (Deposition Transfer and Response Properties of p-PDA/AA Mixed Films)

  • 송진원;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.511-514
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    • 2000
  • Photoreactive multilayer films were prepared using long-chin alkyl diesters of p-phenylenediacrylic acid(p-PDA). In spite of the absence of hydrophilic groups in these molecules, they formed stable monolayers on the water surface when mixed with arachidic acid. Surface showed the presence of a condecsed phase and these monolayer could be transferred onto a substrate with Y-type deposition. The UV spectra of mixed multilayer films showed of absorption peak compared with that in solution. The linear relationship between absorbanoe and the number of layers supports the successful formation of multilayer films.

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Properties of Indium Tin Oxide Multilayer Fabricated by Glancing Angle Deposition Method

  • Oh, Gyujin;Lee, Kyoung Su;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.367-367
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    • 2013
  • Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

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