• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.468-472
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• 1997

The effect of the surface state on the quantum efficiency of underlying GaAs/AlGaAs multi-quantum well(MQW) structures consisting of three GaAs quantum wells with different thickness, is studied by low temperature photoluminescence(PL). The structure was grown by molecular beam epitaxy(MBE) on (100) GaAs substrate. The thickness of three GaAs quantum wells was 3, 6 and 9 nm, respectively. The MQWs were placed apart from 50 nm AlGaAs edge-barriers including two inner-barriers with 15 nm in thickness. The samples used in this study were prepared with different growth temperatures. Particularly, the hydrogen passivation effect to the 9 nm quantum well located at near surface appeared much stronger than any others. Transition energy and optical gain related to the hydrogen passivation effects on the multi-quantum well structure was calculated by transfer matrix method.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.39-43
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• 2004

The parallel multi-quantum well structures of blue and amber lights were designed and grown in metal-organic chemical vapor deposition by utilizing integration process on epitaxial layers. Samples were deposited for 5 periods-InGaN multi-quantum well layers for blue light emission and partially etched in order to regrow the 3 periods-InGaN multi-quantum wells for amber light. The blue and amber photoluminescence spectra were observed at the peak wavelengths of 475 and 580 nm, respectively. The chromatic coordinates of the white emitting diode were 0.31 and 0.34.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.21-27
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• 2000

We used the surface photovoltage spectroscopy(SPVS) for characterization of GaAs/Al\ulcornerGa\ulcornerAs multi-quantum well(MQW) structures grown by molecular beam epitaxy(MBE) method. Energy gap related transitions in GaAs and AlGaAs were observed. The Al composition(x=0.3) was determined by Sek's composition formula. Transition energies in MQW were determined using the differential surface photo-volatage spectroscopy)DSPVS) of the measured resonanced. In order to indentify the transitions, the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum well. We have observed and interesting behavior of the temperature dependence(80K~300K) of the 11Hand 11L transition for sample.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.509-510
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• 2009

The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.