Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Time-Resolved Photoluminescence Measurement of Frenkel-type Excitonic Lifetimes in InGaN/GaN Multi-quantum Well Structures

  • Shin, Gwi-Su (Department of Mechanical Engineering, Chonbuk National University) ;
  • Hwang, Sung-Won (Department of Mechanical Engineering, Chonbuk National University) ;
  • Kim, Keun-Joo (Department of Mechanical Engineering, Chonbuk National University)
  • Published : 2003.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

Keywords

References

  1. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, 'Spontaneous emission of localized excitons in InGaN single and multiquantum well structures', Appl. Phys. Lett., Vol. 69, No. 27, p. 4188, 1996 https://doi.org/10.1063/1.116981
  2. K. Kim and S. J. Chung, 'The Mg solid solution for the P - type activation of GaN thin films grown by metal - organic chemical vapor deposition', Trans. on EEM, Vol. 2, No. 4, p. 24, 2001
  3. S. K. Kim, J. W. Hong, and T. W. Kim, 'Current voltage luminance characteristics depending on a direction of applied voltage in organic light emitting diodes', Trans. on EEM, Vol. 3, No. 1, p. 38, 2002
  4. M. J. Cho, W. J. Choi, J. G. Lee, M. S. Lim, K. J.Lim, and H. H. K-im, 'Luminance characteristics of a movel red light emitting device based on Znq2 and dye ', Trans. on EEM, Vol. 3, No. 2, p. 16. 2002
  5. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M.Asif Khan, and Q. Chen, 'Time resolved photoluminescence studies of InGaN epilayers', Appl. Phys. Lett., Vol. 69, No. 19, p. 2837, 1996 https://doi.org/10.1063/1.117335
  6. C. K. Sun, S. Keller, G. Wang, M. S. Minsky, J. E.Bowers, and S. P. DenBaars, 'Radiative recombination lifetime measurements of InGaN single quantum well', Appl. Phys. Lett., Vol. 69, No. 13, p. 1936, 1996 https://doi.org/10.1063/1.117627
  7. S. Pau, Z. X. Liu, J. Kuhl, J. Ringling, H. T. Grahn, M. A. Khan, C. J. Sun, O. Ambacher, and M. Stutzmann, 'Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire', Phys. Rev. B, Vol. 57, No. 12, p. 7066, 1998 https://doi.org/10.1103/PhysRevB.57.7066
  8. G. E. Bunea, W. D. Herzog, M. S. Unlu, B. B. Goldberg, and R. J. Molnar, 'Time resolved photoluminescence studies of free and donor bound exciton in GaN grown by hydride vapor phase epitaxy', Appl. Phys. Lett., Vol. 75, No. 6, p. 838, 1999 https://doi.org/10.1063/1.124530
  9. D. L. Dexter, F. Seitz, and D. Tumbull, 'Solid State Physics', Academic, New York, p. 359, 1958
  10. H. W. Shim, R. J. Choi, S. M. Jeong, V. V. Le, C. H. Hong, E. K. Suh, H. J. Lee, Y. W. Kim, and Y. G. Hwang, Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes', Appl. Phys. Lett, Vol. 81, No. 19, p. 3552, 2002 https://doi.org/10.1063/1.1519725
  11. O. Brandt, H. Yang, and K. H. Ploog, 'Impact of recombination centers on the spontaneous emission of semiconductors under steady state and transient conditions', Phys. Rev. B, Vol. 54, No. 8, p. R5215, 1996 https://doi.org/10.1103/PhysRevB.54.R5215
  12. C. K. Sun, T. L Chiu, S. Keller, G. Wang, M. S. Minsky, S. P. DenBaars, and J. E. Bowers, 'Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature ', Appl. Phys. Lett., Vol. 71, No. 4, p. 425, 1997 https://doi.org/10.1063/1.119568
  13. R. Klann, O. Brandt, H. T. Grahn, and K. H. Ploog, 'Optical gain in optically pumped cubic GaN at room temperature', Appl. Phys. Lett, Vol. 70, No. 9, p. 1076, 1997 https://doi.org/10.1063/1.118489
  14. E. S. Jeon, V. Kozlov, Y.-K. Song, A. Vertikov, M Kuball, A. V. Nurmikko, H. Liu, C. Chen, R. S. Kem, C. P. Kuo, and M. G. Craford, 'Recombination dynamics in InGaN quantum wells' Appl. Phys. Lett., Vol. 69, No. 27, p. 4194, 1996 https://doi.org/10.1063/1.116983
  15. M. Pophristic, F. H. Long, C. Tran, R. F. Karlicek, Jr., Z. C. Feng, and I. T. Ferguson, 'Time resolved spectroscopy of $In_{x}Ga_{1-x}N/GaN$ multiple quantum wells at room temperature', Appl. Phys. Lett, Vol. 73, No. 6, p. 815, 1998 https://doi.org/10.1063/1.122043
  16. B. Monemar,' Neutron and X-Ray diffraction study of the low temperature chemical and magnetic structure of alpha manganese', Phys. Rev. B, Vol. 10, No.3, P. 676, 1974 https://doi.org/10.1103/PhysRevB.10.676
  17. V. Nikitin, P. A. Crowell, J. A. Gupta, D. D. Awschalom, F. Flack, and N. Samarth, 'Zero-dimensional excitonic confinement in locally strained $Zn_{1-x}Cd_{x}Se$ quantum wells', Appl. Phys. Lett., Vol. 71, No. 9, p. 1213, 1997 https://doi.org/10.1063/1.119854
  18. H. K. Cho, J. Y. Lee, J. H. Song, P. W. Yu, G. M. Yang, and C. S. K-im, 'Influence of strain-induced indium clustering on characteristics of InGaN/GaNmultiple quantum wells with high indium composition', J. Appl. Phys., Vol. 91, No. 3, p. 1104, 2002 https://doi.org/10.1063/1.1427143