• Title/Summary/Keyword: mobility method

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Effects of Recombinant Imperatoxin A (IpTxa) Mutants on the Rabbit Ryanodine Receptor

  • Seo, In-Ra;Choi, Mu-Rim;Park, Chul-Seung;Kim, Do Han
    • Molecules and Cells
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    • v.22 no.3
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    • pp.328-335
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    • 2006
  • Imperatoxin A ($IpTx_a$), a 3.7 kDa peptide from the African scorpion Pandinus imperator, is an agonist of the skeletal muscle ryanodine receptor (RyR1). In order to study the structure of the toxin and its effect on RyR1, $IpTx_a$ cDNA was PCR-amplified using 3 pairs of primers, and the toxin was expressed in E. coli. The toxin was further purified by chromatography, and various point mutants in which basic amino acids were substituted by alanine were prepared by site-directed mutagenesis. Studies of single channel properties by the planar lipid bilayer method showed that the recombinant $IpTx_a$ was identical to the synthetic $IpTx_a$ with respect to high-performance liquid chromatography mobility, amino acid composition and specific effects on RyR1. Mutations of certain basic amino acids ($Lys^{19}$, $Arg^{23}$, and $Arg^{33}$) dramatically reduced the capacity of the peptide to activate RyRs. A subconductance state predominated when $Lys^8$ was substituted with alanine. These results suggest that some basic amino acid residues in $IpTx_a$ are important for activation of RyR1, and that $Lys^8$ plays an important role in regulating the gating mode of RyR1.

Adsorption Affected by Relationship Between Pore Sizes of Activated Carbons and Physical Properties of Adsorbates (활성탄의 세공크기와 흡착질의 물리적 특성과의 연관성이 흡착에 미치는 영향)

  • Kang, Jeong-Hwa;Kwon, Jun-Ho;Kim, Sang-Won;Song, Seung-Koo
    • Journal of Environmental Science International
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    • v.16 no.3
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    • pp.377-383
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    • 2007
  • In this study, the relationship between the pore size distribution and the adsorption amount of adsorbates is investigated in detail. Adsorption amounts of non-polar adsorbates were greater than those of polar adsorbates because of slight negative charge on surfaces of adsorbents. The adsorption of benzene on the surface of absorbents was largely influenced by the specific pore size of $2{\sim}4$ times of benzene diameter. But in case of toluene, the adsorption of toluene was affected by pore sizes of $2{\sim}4$ times as well as $4{\sim}6$ times of the diameter of toluene. Both acetone and MEK were examined by the same method. The adsorption of acetone was influenced by pore sizes of $2{\sim}4$ times of the diameter of acetone. But acetone does not look to be built up multi-layer on those pore sizes. Since acetone molecule is small and its mobility is so fast, it is assumed that the adsorption and desorption of acetone is simultaneously occurred at the same time even at room temperature. In case of MEK, MEK was effected by pore sizes of $2{\sim}4$ times of the diameter of MEK.

THE INFLUENCING FACTORS OF $PERIOTEST^(R)$ VALUE AND IMPLANT STABILITY QUOTIENT ($Periotest^(R)$ Value와 Implant Stability Quotient에 영향을 미치는 요소)

  • Yi Young-Ah;Cha In-Ho;Lee Ho-Yong;Han Dong-Hoo
    • The Journal of Korean Academy of Prosthodontics
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    • v.44 no.1
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    • pp.40-50
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    • 2006
  • Statement of problem: $Periotest^(R)\;and\;Osstell^{TM}$ were known as the most objective and quantitative mobility tests available for evaluating stability of implant in vivo. Although a correlation between PTV widely used and ISQ recently introduced exist, a PTV was corresponded to various ISQ. A correct evaluation of implant stability could be obtained only after one has a thorough understanding of the limitations of devices and factors that affect measurements. Purpose: The purpose of this study was to investigate the causes of variables in the values obtained with these two tests. Material and method: A total of 333 implants 134 $Br{\aa}nemark$, 5 Silhouette and 194 ITI implants were investigated. Result: 1. There was a correlation between PTV and ISQ (Spearman correlation =0.39, p<0.0001) 2. The factors that affected ISQ were diameter of implant future, location of implant and implant system (submerged type vs non-submerged type). 3. The factors that affected W were dimeter of implant future, location of implant, and elapsed time after implant placement. 4. There was no significant difference between different surface treatments of RBM, smooth surface and ti-unite on PTY and ISQ. 5. In radiographic finding, no saucerization or bone resorption has been detected in implants with ISQ values that were above the average level of each PTV. These higher values had higher bone densities around the implant fixture. Saucerization was observed in the most impants with ISQ values that were below the average level of each PTV. Conclusion: There was a correlation between ISQ and PTV. However, each measuring methods had factors influencing the measured values. PTV were less sensitive to marginal bone resorption and influenced with the striking point on an implant to the level of bone. With ISQ, the height of implant from bone level to transducer should be considered.

Design and Implementation of Low-power RTLS Tag using Adaptive Blink (적응형 블링크를 이용한 저전력 RTLS 태그의 설계 및 구현)

  • Jung, Yeon-Su;Kim, Sae-Na;Baek, Yun-Ju
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.3
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    • pp.580-585
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    • 2009
  • Real Time Locating Systems (RTLS) are used to track and identify the location of objects in real time using simple, inexpensive tags attached to or embedded in objects and readers that receive the wireless signals from these tags to determine their locations. A tag is powered an internal source such as a battery. The blink frequency of a tag affects the energy efficiency and the locating accuracy of RTLS. The mobility of a tag also affects the locating accuracy. In this paper, we introduce a RTLS tag design which improves the locating accuracy and the power efficiency. We propose an adaptive transmission-rate control algorithm using a motion sensor. By analyzing the signal pattern of the motion sensor, we can build a model to estimate the speed of the motion. Using this model, our algorithm can achieve better locating accuracy and lower power consumption than those of the conventional method. In our experiments, the number of transmission reduced as 40%, keeping similar locating accuracy.

Co-relation between Questionnaire for Buzhongyiqi-Tang and Electrogastrography (보중익기탕 변증설문지와 위전도의 상관성 연구)

  • Kim, Sun-Hyeok;Park, Young-Bae;Park, Young-Jae;Oh, Hwan-Sup
    • The Journal of the Society of Korean Medicine Diagnostics
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    • v.13 no.2
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    • pp.34-44
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    • 2009
  • Background : Currently, as a method of standardization of prescription, questionnaire for Buzhongyiqi-Tang[補中益氣湯] was developed, and which is a Objectives : The purpose of this thesis is to testify whether differentiation of Lao Juan Shang[勞倦傷] etiology is relative to mobility of gastric smooth muscle. Methods : The subjects(20 to 65 years old; 14 males, 46 females) were isolated from drinking alcohols for 24 hours before the experiment, and fasted for 8 hours, and measured for electrogastrography(EGG) and they filled out Questionnaire for Buzhongyiqi-Tang. Results : 1. Six factors from the factor analysis of Questionnaire for Buzhongyiqi -Tang were named and classified as Spleen-Qi deficiency syndrome factor [脾虛] (factor 1), Lung-Qi deficiency syndrome factor [肺虛] (factor 2), Working factor [習慣] (factor 3), Yin-Fire factor [陰火] (factor 4), Jung-Qi deficiency syndrome factor [中氣虛] (factor 5), and Stomach-Qi deficiency syndrome factor [胃虛] (factor 6). 2. As for the reliability of Questionnaire for Buzhongyiqi-Tang, we used Cronbach's alpha coefficient. Cronbach's alpha coefficient was 0.772 for the mean of the item-total. 3. Lung-Qi deficiency syndrome factor(factor2) had significant correlation with Bradygastria Time (r=-0.312, p<0.05). 4. Working factor(factor3) had significant correlation with Bradygastria Time (r=-0.329, p<0.05). 5. Yin-Fire factor(factor4) had significant correlation with Power Ratio (r=-0.328, p<0.05). Conclusions : It is shown that Bradygastria Time and Power Ratio tended to decrease against postprandial DP increased and postprandial frequency decreased in normal case.

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Real-Time Monitoring of ECG Signal under Ubiquitous Environment (유비쿼터스 환경 하의 실시간 심전도 신호 모니터링)

  • Kim, Jungjoon;Kim, Jin-Sub;Ryu, Chunha;Kim, Jeong-Hong;Park, Kil-Houm
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.9
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    • pp.728-735
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    • 2013
  • In this paper, we present a method of transmitting ECG signals in real-time mobile environment to be possible to implement the ubiquitous healthcare system. Because of the excessive amount of data transmission of ECG signals, it is necessary to propose a limitation to the real-time transmission. We propose a real-time electrocardiographic monitoring system based on the proposal of unusual waveform detection algorithm which detects the R-wave distortions from the arrhythmia ECG signals having unusual waveform of about 10% on average. It is very effective in terms of time and cost for medical staffs to monitor and analyze ECG signals for a long period of time. Monitoring unusual waveform by gradually adjusting the threshold values of potential and kurtosis makes the amount of data transmitted decrease and significance level of waveform to be enhanced. The unusual waveform detection algorithm is implemented with ubiquitous environment inter-working device client. It is applicable to ubiquitous healthcare system capable of real-time monitoring the ECG signal. While ensuring the mobility, it allows for real-time continuous monitoring of ECG signals.

Growth and Optoelectric Characterization of CdGa$_2$Se$_4$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한 CdGa$_2$Se$_4$ 단결정 박막 성장과 광전기적 특성)

  • 홍광준;박창선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

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Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성)

  • 박창선;홍광준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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Dispersion Characteristics of Ag Pastes and Properties of Screen-printed Source-drain Electrodes for OTFTs (Ag Pastes의 분산 특성 및 스크린 인쇄된 OTFTs용 전극 물성)

  • Lee, Mi-Young;Nam, Su-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.835-843
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    • 2008
  • We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2Se4 단결정 후막 성장과 열처리 효과)

  • Hong, Myung-Seuk;Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.437-446
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    • 2008
  • Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.