• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.2
• /
• pp.71-75
• /
• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.101-104
• /
• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.7
• /
• pp.304-307
• /
• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Journal of Power Electronics
• /
• v.18 no.4
• /
• pp.985-996
• /
• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.27 no.1
• /
• pp.80-83
• /
• 2022

This paper proposes an initial rotor polarity detection algorithm of a single-phase permanent magnet synchronous motor (SP-PMSM) related to stable open-loop starting for sensorless operation. Generally, the SP-PMSM needs an asymmetric air-gap structure to can avoid the initial starting failure at zero torque point. Therefore, the rotor polarity information can be obtained by using the DC offset current direction of a stator current through a high frequency voltage injection into an SP-PMSM with an asymmetric air gap. In this paper, the proposed rotor initial polarity detection algorithm is verified through several experimental results.

• Proceedings of the Korean Operations and Management Science Society Conference
• /
• 2007.11a
• /
• pp.388-394
• /
• 2007

In wireless network, we propose a predictive location update scheme which considers mobile user's(MU's) mobility patterns. MU's mobility patterns can be found from a movement history data. The prediction accuracy and model complexity depend on the degree of application of history data. The more data we use, the more accurate the prediction is. As a result, the location management cost is reduced, but complexity of the model increases. In this paper, we classify MU's mobility patterns into four types. For each type, we find the respective optimal number of application of history data, and predictive location area by using the simulation. The optimal numbers of four types are shown to be different. When we use more than three application of history data, the simulation time and data storage are shown to increase very steeply.

• Proceedings of the KIEE Conference
• /
• 1988.11a
• /
• pp.249-251
• /
• 1988

In this paper, the negative ion mobility of $SF_6$ is determined using as a negative ion detector the burst pulse which is triggered in a positive point-plane gap by electrons detached from negative ions near the anode point. The result obtained for the negative ion mobility for zero field at atmospheric pressure is $0.57cm^2v^{-1}s^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.782-784
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.8
• /
• pp.675-678
• /
• 2001

We fabricated the organic light emittign diodes (OLEDs) with ITO/Cu-Pc/triphenyl-diamine (TPD)/TPD+tris-(8-hydroxyquinoline) aluminum (Alq$_3$)/Al. The electrical properties of Cu-Pc thin film were studied as a hole injection layer. the energy gap of Cu-Pc thin films is decreased according to the substrate heat treatment temperature increased. It could be controlled the hole mobility by changing the heat treatment condition of Cu-Pc. The emission wavelengths could be controlled by changing hole mobility and recombination zone in emission layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.370-374
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.