• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.91-96
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• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.88-96
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• 1994

Hot filament-assisted CVD was carried out to deposit diamond films on Si(100) substrate at 90$0^{\circ}C$ using a 1% CH4-H2 mixture gas. Deposition was made at various conditions of mass flow rate of the feed gas (30~1000 sccm), pressure (2.5~300 Torr), and filament-substrate distance (4~15 mm), and the deposited films were characterized by SEM, XRD, and Raman spectroscopy. As the flow rate increases, the growth rate also increased but the crystallinity of the film was degraded. A longer filament-substrate distance simply caused both the growth rate and the crystallinity to become poorer. On the other hand, the pressure variation resulted in a maximum growth rate of 2.6 ${\mu}{\textrm}{m}$/hr at 10 Torr and the best film quality around 50 Torr, exhibiting an optimum condition. The observed trends were interpreted in terms of the flow velocity-dependent pyrolysis reaction efficiency and mass transport through the boundary layer.

• Journal of the Korean institute of surface engineering
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• v.18 no.1
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• pp.5-11
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• 1985

Titanium was deposited onto AISI-430 stainless steel by chemical vapor deposition from $TiI_4\;and\;H_2$ gas mixture. Effects of temperature, flow rate of the gas, and $TiI_4$ partial pressure on the deposition rate were thoroughly investigated. The deposition rate of Ti was found to be constant at the given temperature and was increased with increasing temperature. The rate is controlled by surface reaction at the flow rate of gas higher than 500 ml/min, whereas at the flow rate lower than that by diffusional process. It is also interesting to note that the reaction mechanism changes at 1050$^{\circ}C$, at temperatures lower than 1050$^{\circ}C$ the activation energy is 56.9 Kcal/mol, whilst at temperatures higher than that is 8.3 Kcal/mol.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.192-195
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• 2000

In describing the plastic deformation behaviour of fine grained materials a phase mixture model in which a polycrystalline material is regarded as a mixture of a crystalline phase and a grain boundary phase has been successful. The deformation mechanism for the grain boundary phase which is necessary for applying the phase mixture model is modelled as a diffusional flow of matter though the grain boundary. The proposed model can explain the strain rate and grain size dependence of the strength of the grain boundary phase.

• Journal of Mechanical Science and Technology
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• v.20 no.5
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• pp.717-727
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• 2006

The present study experimentally investigated the effect of flow direction and other flow parameters on two-phase flow distribution of refrigerants at a T-junction, and also suggested a prediction model for refrigerant in a T-junction by modifying previous model for air-water flow. R-22, R-134a, and R-410A were used as test refrigerants. As geometric parameters, the direction of the inlet or branch tube and the tube diameter ratio of branch to inlet tube were chosen. The measured data were compared with the values predicted by the models developed for air-water or steam-water mixture in the literature. We propose a modified model for application to the reduced T-junction and vertical tube orientation. Among the geometric parameters, the branch tube direction showed the biggest sensitivity to the mass flow rate ratio for the gas phase, while the inlet quality showed the biggest sensitivity to the mass flow rate ratio among the inlet flow parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• 한국연소학회:학술대회논문집
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• 2003.05a
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• pp.103-108
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• 2003

The control of flame shapes in a laminar pre-mixed flame has been experimentally investigated for propane/air pre-mixed laminar flames. Flames of different size and shapes are observed with heated wires or by controlling the equivalence ratio and flow rate of a mixture. The characteristics of the partitioning of a flame or the merge of flames are analyzed and explained by considering the balance between laminar flame speed and upstream mixture velocity. A combustor might be sized down while maintaining its heat production rate the same by partitioning a flame established in it. When the equivalence ratio of mixture is decreased, individual flames are merged together and the upstream mixture velocity can be practically decreased on a nozzle having opening ratio less than unity. As a result, the flame shape is to he adjusted until the newly established balanced condition is satisfied, and then. the stable combustion can be achieved again.

• Journal of Mechanical Science and Technology
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• v.16 no.10
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• pp.1336-1345
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• 2002

A triboelectrostatic separation system using a fluidized bed tribocharger for the removal of PVC material in the mixture of PVC/PS plastics is designed and evaluated as a function of electric field strength, air flow rate, and the mixing ratio of two-component mixed plastics. It consists of a fluidized-bed tribocharger, a separation chamber, a collection chamber and a controller. PVC and PS particles can be imparted negative and positive surface charges, respectively, due to the difference in the work function values of plastics suspended in the fluidized-bed tribocharger, and can be separated by passing them through an external electric field. Experimental results show that separation efficiency is strongly dependent on the electric Deld strength and particle mixing ratio. In the optimum conditions of 150 Ipm air flow rate and 2.6 kV/cm electric field strength a highly concentrated PVC (99.1%) can be recovered with a yield of more than 99.2% from the mixture of PVC and PS materials for a single stage of processing.