• 조명전기설비학회논문지
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• 제30권3호
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• pp.86-93
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• 2016

It is very desirable that a mixture gas possessing excellent insulation performance is suggested for insulation on increasing high voltage. This paper proposes a $SF_6$ mixture gas based on the factors including dielectric strength, environmental impact and economic feasibility of manufacture for the insulation in eco-friendly power equipment. A suitable-$SF_6$ content was determined to improve the dielectric strength in $N_2$ and Dry Air. The examination results of the factors revealed that a $SF_6$/Dry Air mixture gas possessing the $SF_6$ content was more appropriate than a $SF_6/N_2$ mixture gas to the eco-friendly power equipment. In addition to the selection of the suitable $SF_6$ mixture gas, insulation characteristics as a function of $SF_6$ content were described from electron-detachment mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.182-185
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• 2003

Etching characteristics of (PB,Sr)$TiO_3$(PST) thin films Were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture' lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 562 ${\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• 한국정보통신학회논문지
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• 제6권5호
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• pp.768-776
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• 2002

멀티미디어, 인터넷 환경에서 서버 시스템의 활용이 일반화됨에 따라, 시스템에 저장된 모든 자료의 보안을 위한 권한 부여나 접근 제어와 같은 상위 수준의 보안 메카니즘이 요구되는 현실이다. 또한 분산 환경에서는 시스템내에 저장된 정보들의 정형화된 스키마의 부재, 비체계성 등으로 인하여 보다 복잡한 체계의 보호기술이 필요하게 되었다. 본 논문에서는 일반적인 접근제어 방식을 고찰, 분석하고 기본적인 모델링을 정리하여 설명하였고, RBAC(Role-Based Access Control) 모델링의 모듈들을 분리하고 각 모듈들에 대한 역할을 할당한 후, 기존의 접근제어 모델링과 RBAC 모델링을 혼합 사용하여 새로운 접근제어 모델링을 제시한다.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.445-448
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• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년도 제31회 추계학술대회논문집
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• pp.231-236
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• 2008

양이온 개환중합법을 이용하여 Epichlorohydrin(ECH)과 Tetrahydrofuran(THF)을 공중합 하였다. 중합은 1,4-Butandiol 존재 하에 $BF_3THF$를 촉매로 사용하여 잘 제어된 Copolyetherdiol을 합성하였다. 분자량은 [monomer]/[diol]비를 조절하였고, 공중합체 조성은 ECH와 THF의 투입몰비를 변화하여 조절하였다. 합성된 Copolyetherdiol의 Chlorine기는$S_N2$반응을 이용하여 Azide기로 치환하였다. 합성된 고분자를 프리폴리머로 사용하여 경화제인 N-100/IPDI와 경화촉매인 TPB/MA 혼합촉매를 이용하여 Polyurethane을 합성하여 경화거동과 기계적 특성은 비교 분석하였다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.432-436
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• 2019

In this study, we produced a light, flexible, wearable gas sensor by depositing MWCNTs (Multi-walled Carbon Nanotubes) into nylon. MWCNTs are widely used as a gas sensor material due to their excellent mechanical, electrical and physical characteristics. We produced a gas sensor to detect NOx gases by depositing nylon yarn in a MWCNT solution. The MWCNT solution was made by mixing 3 mg MWCNT in 5 ml of ethanol. Nylon yarn was placed in the manufactured solution and ultrasonic waves were applied using an ultrasonicator for 3 h, resulting in MCWNT deposition. The MWCNT-deposited nylon yarn was dried at room temperature for 24 h. The MWCNT-thin-film-coated nylon yarn was masked 1 mm apart, and gold was then deposited on the masked nylon yarn to create the gas sensor. The sensor then was installed in a chamber with a controlled atmospheric environment and exposed to NOx gas. The changing signal from the sensor was amplified to analyze its gas detection characteristics.

• 전자통신동향분석
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• 제34권5호
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• pp.99-112
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• 2019

A quantum light source is an essential element for quantum information technology, including quantum communication, quantum sensor, and quantum computer. Quantum light sources including photon number state, entangled state, and squeezed state can be divided into two types according to the generation mechanism, namely single emitter and non-linear based systems. The single emitter platform contains atom/ion trap, solid-state defect/color center, two-dimensional material, and semiconductor quantum dot, which can emit deterministic photons. The non-linear based platform contains spontaneous parametric down-conversion and spontaneous four-wave mixing, which can emit probabilistic photon pairs. For each platform, we give an overview of the recent research trends of the generation, manipulation, and integration of single photon and entangled photon sources. The characteristics of quantum light sources are investigated for each platform. In addition, we briefly introduce quantum sensing, quantum communication, and quantum computing applications based on quantum light sources. We discuss the challenges and prospects of quantum light sources for quantum information technology.

• 대한금속재료학회지
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• 제47권1호
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• pp.50-58
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• 2009

In this study, alumina matrix composites reinforced with carbon nanotubes (CNTs) were fabricated by ultrasonic dispersion, ball milling, mixing, compaction, and sintering processes, and their relative density, electrical resistance, hardness, flexure strength, and fracture toughness were evaluated. 0~3 vol.% of CNTs were relatively homogeneously dispersed in the composites in spite of the existence of some pores. The three-point bending test results indicated that the flexure strength increased with increasing volume fraction of CNTs, and reached the maximum when the CNT fraction was 1.5 vol.%. The fracture toughness increased as the CNT fraction increased, and the fracture toughness of the composite containing 3 vol.% of CNTs was higher by 40% than that of the monolithic alumina. According to observation of the crack propagation path after the indentation fracture test, a new toughening mechanism of grain interface bridging-induced CNT bridging was suggested to explain the improvement of fracture toughness in the alumina matrix composites reinforced with CNTs.