Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Al2O3 Thin Films Etching Characteristics Using Inductively Coupled BCl3/Ar Plasma

유도결합형 BCl3/Ar 플라즈마를 이용한 Al2O3 박막의 식각 특성

  • Kim, Young-Keun (Department of Control and Instrumentation Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
  • 김용근 (고려대학교 제어계측공학과) ;
  • 권광호 (고려대학교 제어계측공학과)
  • Received : 2011.03.02
  • Accepted : 2011.05.11
  • Published : 2011.06.01
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Abstract

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

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References

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