• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.477-483
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• 2003

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.865-872
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• 1995

Ultra-fine $\beta$-SiC powders were fabricated by self-propagating high temperature synthesis process (SHS) using microwave oven. The flexural strength, fracture toughness, and hardness of hot pressed sample at 200$0^{\circ}C$ for 60 min using synthesized SiC powders, which had 2 wt% of Al2O3 and 2.5 wt% of B4C content, showed 438 MPa, 4.15MPa.m1/2 and 28 GPa, respectively. The highest strength, fracture toughness, and hardness of composites containing 4wt% of Al2O3, which had highest relative density of 99.9%, showed 458 MPa, 4.6MPa.m1/2 and 36.2 GPa, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.442-446
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• 1994

In this study, microwave dielectric properties of 0.182BaO-0.818TiOS12T ceramics were investigated with sintering temperature and annealing time, and the application for the microwave dielectric resonator was studied. In the specimen simtered at 1400[$^{\circ}C$], dielectric constant, unloaded Q and temperature coefficient of resonant frequency had good values of 35.36, 5692, -4.43[ppm/$^{\circ}C$], respectively. The specimen which temperature coefficient of resonant frequency($\tau$f) was vared positive to negative value was selected, thereafter microwave dielctric properties was investigated with annealing time(0~4[hr]) in the fixed annealing temperature of 1350[$^{\circ}C$]. Increasing the annealing time, dielectric constant and unloaded Q were increased and temperature coefficient of resonant frequency was decreased.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.783-787
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• 2004

Microwave dielectric properties and the microstructure of $Ba_5Nb_4O_{15}$ ceramics with $PbO-B_2O_3-SiO_2$ glass frit were investigated to reduce the sintering temperature of $Ba_5Nb_4O_{15}$ ceramics as a function of the amount of glass frit from $0.5wt\%$ to $10wt\%$ and the sintering condition. The sintered density and the microwave dielectric properties of $Ba_5Nb_4O_{15}$ ceramics were remarkably changed with the amount of glass fit which existed as a liquid phase and assisted the densification. $Ba_5Nb_4O_{15}$ with $3wt\%$ $PbO-B_2O_3-SiO_2$ glass frit sintered at $900^{\circ}C$ for 2 h showed dielectric constant (K) of 41.4, a quality factor (Q $\times$f) of 13,485 GHz, and a Temperature Coefficient of resonant Frequency (TCF) of 9 ppm/$^{\circ}C$. Due to no trace of physical and chemical reaction between this composition and Ag electrode cofired at $900^{\circ}C$ for 2 h, this ceramics can be a good candidate for the multilayer dielectric filter.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.165-169
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• 2004

Microwave dielectric properties and the behavior of low-temperature sintering of $Zn_{1-x}(Li_{1/2}La_{1/2})_xTiO_3$ ($0.01{\leq}x{\leq}0.05$) with 4 wt% $H_3BO_3$ were investigated as a function of $(Li_{1/2}La_{1/2})^{2+}$ content. The sintering temperature of the specimens can be reduced from $1150^{\circ}C$ to $875^{\circ}C$ with the addition of 4 wt% $H_3BO_3$ as a sintering agent. Dielectric constant (K) and Temperature Coefficient of resonant Frequency (TCF) with the substitution of ($(Li_{1/2}La_{1/2})^{2+}$ ion depended on dielectric mixing rule. Quality factor (Qf) depended on density and microstructure. Typically, K of 26.5, Qf of 19,030 GHz and TCF of 7.5 ppm$/^{\circ}C$ were obtained for the specimens with x=0.03 sintered at $875^{\circ}C$ for 3 h.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1293_1294
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• 2009

The sintering and high frequency electro-magnetic properties of Ba-hexagonal ferrite were investigated. All samples of the Ba-hexagonal ferrite were prepared by the conventional mixed oxide method and sintered at $1150^{\circ}C$~$1400^{\circ}C$. From the X-ray diffraction patterns of sintered Ba-hexagonal ferrite, the $Ba_3Co_2Fe_{24}O_{41}$ phase was represented as main phase in the almost sintering conditions. The bulk densities with sintering temperature and decreased at $1400^{\circ}C$. The permittivity ($\varepsilon$') and loss tangent of permittivity ($\varepsilon$"/$\varepsilon$') of $Ba_3Co_2Fe_{24}O_{41}$ ceramics increased and decreased with sintering temperature, respectively. The permeability of $Ba_3Co_2Fe_{24}O_{41}$ ceramics decreased with sinteirng temperature. The loss tangent of permeability was not changed compared each other with sintering temperature. The bulk density of $Ba_3Co_2Fe_{24}O_{41}$ ceramics sintered at $1300^{\circ}C$ was 4.79 g/$cm^3$. The permittivity, loss tangent of permittivity and permeability, loss tangent of permeability were 19.896, 0.1718 and 14.218, 0.2046 at 210 MHz, respectively.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.98-100
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• 2003

The microwave dielectric properties and microstructure of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated. All sample of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were prepared by conventional mixed oxide method. The sintering temperature was $1375^{\circ}C{\sim}1450^{\circ}C$. The structural properties of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated by X-ray diffractormeter. According to the X-ray diffraction patterns of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics, the major phase of the hexagonal $Mg_4Ta_2O_9$ were presented. In the case of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics sintered at $1425^{\circ}C$, density, dielectric constant, quality factor were $5.799g/cm^2$, 23.26, 40,054 GHz, respectively.

• Advances in materials Research
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• v.3 no.2
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• pp.105-116
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• 2014

The microwave dielectric properties of $CeO_2$ nanoparticles (0.5, 1.0 & 1.5wt%) doped $Mg_2TiO_4$ (MTO) ceramics have been investigated at cryogenic temperatures. The XRD patterns of the samples were refined using the full proof program reveal the inverse spinel structure without any secondary phases. The addition of $CeO_2$ nanoparticles lowered the sintering temperature with enhancement in density and grain size as compared to pure MTO ceramics. This is attributed to the higher sintering velocity of the fine particles. Further, the microwave dielectric properties of the MTO ceramics were measured at cryogenic temperatures in the temperature range of 6.5-295 K. It is observed that the loss tangent ($tan{\delta}$) of all the samples increased with temperature. However, the $CeO_2$ nanoparticles doped MTO ceramics manifested lower loss tangents as compared to the pure MTO ceramics. The loss tangents of the pure and MTO ceramics doped with 1.5 wt% of $CeO_2$ nanoparticles measured at 6.5K are found to be $6.6{\times}10^{-5}$ and $5.4{\times}10^{-5}$, respectively. The addition of $CeO_2$ nanoparticles did not cause any changes on the temperature stability of the MTO ceramics at cryogenic temperatures. On the other hand, the temperature coefficient of the permittivity increased with rise in temperature and with the wt% of $CeO_2$ nanoparticles. The obtained lower loss tangent values at cryogenic temperatures can be attributed to the decrease in both intrinsic and extrinsic losses in the MTO ceramics.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.57-63
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• 2003

The effects of glass addition on the low-temperature sintering and microwave dielectric properties of $BaO-Nd_2O_3-TiO_2$ dielectric ceramics were studied. When 10∼13 wt% of lithium borosilicate glass was added, the sintering temperature decreased from 130$0^{\circ}C$to 850-$900^{\circ}C$relative density of more than 97% was obtained. When the sample was sintered at $850^{\circ}C$ with 10 wt% of glass, the dielectric properties of $\epsilon_r{\ge}54$, $Q{\times}f_0{\ge}2300$, and $\tau_f{\ge}+8ppm/^{\circ}C$ were obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.428-432
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• 2015

Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.