• Korean Journal of Materials Research
• /
• v.16 no.4
• /
• pp.257-263
• /
• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Current Photovoltaic Research
• /
• v.2 no.4
• /
• pp.173-176
• /
• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.41.2-41.2
• /
• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.11a
• /
• pp.57-57
• /
• 2000

Brazing characteristics of the LTCC(Low Temperature Co-fired Ceramics)/ Kovar(Fe-Ni-Co alloy) was investigated. Kovar is one of the typical material for the lid of MCM and packages. In case of alumina package, Brazing process is done by higher temperature profile than 800 $^{\circ}C$ and Ag-Cu alloy. But, LTCC has sintering temperature near 850 $^{\circ}C$. So, it is difficult to use the same process as alumina brazing. The adhesion strength of the brazed part is affected by brazing alloy and metallization properties between conductor pattern and LTCC material. We investigated brazing characteristics of the LTCC/Kovar using various brazing alloys(Ag-Cu, Au-Sn) and process conditions. And, we examined the influence of the glass contents in conductor on the brazing characteristics of the LTCC/Kovar.

• Journal of the Korean Ceramic Society
• /
• v.54 no.6
• /
• pp.535-538
• /
• 2017

Here we report the tunable electrical properties and chemical sensor of single-walled carbon nanotubes (SWCNTs) network-based devices with a functionalization technique. Formation of highly aligned SWCNT structures is made on $SiO_2/Si$ substrates using a template-based fluidic assembly process. We present a Platinum (Pt)-nanocluster decoration technique that reduces the resistivity of SWCNT network-based devices. This indicates the conversion of the semiconducting SWCNTs into metallic ones. In addition, we present the Hydrogen Sulfide ($H_2S$) gas detection by a redox reaction based on SWCNT networks functionalized with 2,2,6,6-Tetramethylpiperidine-1-oxyl (TEMPO) as a catalyst. We summarize current changes of devices resulting from the redox reactions in the presence of $H_2S$. The semiconducting (s)-SWCNT device functionalized with TEMPO shows high gas response of 420% at 60% humidity level compared to 140% gas response without TEMPO functionalization, which is about 3 times higher than bare s-SWCNT sensor at the same RH. These results reflect promising perspectives for real-time monitoring of $H_2S$ gases with high gas response and low power consumption.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.428-432
• /
• 1999

As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.06a
• /
• pp.96-96
• /
• 1996

• 한국태양에너지학회:학술대회논문집
• /
• 2009.04a
• /
• pp.225-229
• /
• 2009

The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.57-58
• /
• 2006

Chemical-mechanical planarization (CMP) of Cu has used currently in semiconductor process for multilevel metallization system. This process requires the application of a considerable down-pressure to the sample in the polishing, because porous low-k films used in the Cu-multilevel interconnects of 65nm technology node are often damaged by mechanical process. Also, it make possible to reduce scratches and contaminations of wafer. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP. In this study, the electrochemical mechanical polisher was manufactured. And the static and dynamic potentiodynamic curve of Cu were measured in KOH based electrolyte and then the suitable potential was found.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.130-137
• /
• 1995

Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.