• 자원리싸이클링
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• 제26권5호
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• pp.85-96
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• 2017

본 연구에서는 PCB 도금 및 에칭 공정 중 발생한 슬러지의 분석을 통해 건식환원처리가 가능한 슬래그 시스템을 선정하고자 하였으며 이를 바탕으로 슬러지 내에 존재하는 유가금속의 회수 가능성에 대하여 실험적 및 열역학적 검토를 하였다. 슬러지는 $100{\sim}500^{\circ}C$의 온도구간에서 건조한 후 슬러지의 형상과 화학성분 및 상을 분석하였다. 슬러지의 건식환원처리 가능성은 FactSage를 이용한 열역학적 계산을 통해 조사하였다.

• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1462-1466
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• 2013

We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.

• Journal of Electrochemical Science and Technology
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• 제12권4호
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• pp.387-397
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• 2021

Deep eutectic solvents have been established as feasible metal electroplating solvent alternatives over traditional toxic aqueous plating baths. However, water, either added intentionally or unintentionally, can significantly influence the solvent's physical properties and performance, thereby hindering its industry application. In this study, the hygroscopicity, or the ability to absorb moisture from the environment, of synthesized ethaline (1:2 choline chloride:ethylene glycol) was investigated. The kinematic viscosity, electrical conductivity, electrochemical window, and water content of ethaline were monitored over a 2-week period. Karl Fischer titration tests showed that ethaline exposed to the atmosphere displayed significant hygroscopicity compared to its unexposed counterpart. ¹H NMR spectroscopy revealed that water vapor was readily absorbed at the surface due to the hydrophilic groups present in the ethaline molecule. Water uptake resulted in the decrease in viscosity, increase in electrical conductivity and narrowing of the electrochemical window of ethaline. Solution heating at 100℃ removed the absorbed moisture and allowed the recovery of the solvent's initial properties.

• 한국표면공학회지
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• 제44권5호
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• pp.173-178
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• 2011

Separator of stack in polymer electrolyte membrane fuel cell (PEMFC) is high cost and heavy. If we make it low cost and lighter, it will have a great ripple. In this study, low carbon steel is used as base metal of separator because the cost of low carbon steel is very cheaper commercial metal material than stainless steels, which is widely used as separator. Low carbon steel has not a good corrosion resistance. In order to improve the corrosion resistance and electrolytic conductivity, low carbon steel needs to be surface treated. We made Chromium electroplated layer of $5{\mu}m$, $10{\mu}m$ thickness on the surface of low carbon steel and it was nitrided for 2 hours at $1000^{\circ}C$ in a furnace with 100 torr nitrogen gas pressure. Cross-sectional and surface microstructures of surface treated low carbon steel are investigated using SEM. And crystal structures are investigated by XRD. Interfacial contact resistance and corrosion tests were considered to simulate the internal operating conditions of PEMFC stack. The corrosion test was performed in 0.1 N $H_2SO_4$ + 2 ppm $F^-$ solution at $80^{\circ}C$. Throughout this research, we try to know that low carbon steel can be replaced stainless steel in separator of PEMFC.

• 마이크로전자및패키징학회지
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• 제27권2호
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• pp.39-44
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• 2020

최근 웨어러블 장치에 적용하기 위한 유연성 기판에 대한 연구가 활발히 진행되고 있다. 특히, 유연성 기판 중 의복에 웨어러블 장치를 적용하기 위한 전도성 섬유기판에 대한 연구가 진행되고 있다. 본 연구에서는, 면섬유 기판 표면에 CNT와 Pd복합 용액을 스프레이 법을 이용하여 형성하였고, 무전해 도금법을 이용하여 금속층을 도금하였다. 도금된 섬유기판의 형상을 분석하기 위하여 SEM 장비를 이용하였고, CNT를 증착한 섬유기판의 표면에 Ni 레이어가 형성된 것을 확인하였다. EDS 분석을 통하여 섬유기판의 표면에 형성된 물질이 Ni임을 알 수 있었다. 전기적 특성을 확인하기 위하여 4-point probe로 무전해 도금을 진행한 섬유기판의 표면저항 및 저항 분포를 확인하기 위한 맵핑을 진행하였다. 무전해 도금의 진행 시간이 길어질수록 전도성이 향상되었음을 확인할 수 있었고, 표면 위치 별 저항의 분포가 균일함을 알 수 있었다. 인장력, 굽힘, 뒤틀림 시험을 통하여 기계적 스트레스로 인한 저항변화를 측정하였다. 그 결과 도금 시간이 길어질수록 유연성 기판의 저항변화가 점점 사라지는 것을 확인하였다. UTM(Universal testing machine)을 이용하여 도금시간 변화에 대한 무전해 도금 기판의 기계적 특성 향상 여부에 대하여 분석하였다. 인장강도는 무전해 도금을 2 시간 동안 진행한 전도성 섬유기판의 경우, 면섬유 기판보다 약 16 MPa 증가하였다. 이러한 결과들을 토대로 Ni-CNT-Fabric 유연기판은 의류 일체형 전도성 기판으로 이용되기에 충분함을 확인하였고, 이러한 연구 결과는 유연기판, 웨어러블 디바이스뿐만 아니라 유연성이 필요한 배터리, 촉매, 태양전지 등에 적용되어 발전에 기여할 수 있을 것으로 기대한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 전기화학회지
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• 제4권4호
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• pp.160-165
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• 2001

황산원자를 포함하는 mercapto화합물은 도금시 전착속도를 증가시키는 첨가제로 알려져 있는데, 이 중 4가지의 mercapto 화합물을 선정하여 농도를 변화시켜가며 Hull cell test, Haring-Blum cell test, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance)등을 이용하여 도금특성 및 throwing power를 알아보았다. Cathode polarization 및 EQCM을 통한 구리 전착량을 알아본 결과 4가지의 mercapto 화합물 중 3-mercapto-1-propanesulfonic acid가 activator로서 가장 적당하였으며, 그 농도가 20 ppm에서 throwing power를 증가시키고, 농도 및 활성 과전압이 오직 $Cl^-$만 포함되었을 때보다 cathodic scan시 100 mV 만큼 shift되어 증착속도를 증가시킴을 알 수 있었다.

• 한국정밀공학회지
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• 제25권4호
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• pp.134-139
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• 2008

A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

• 한국주조공학회지
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• 제25권6호
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• pp.259-264
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• 2005

The copper clad steel wire is used extensively as lead wires of electronic components such as capacitors, diodes and glass sealing lamp because the wire combines the strength and low thermal expansion characteristic of Fe-Ni steel with the conductivity and corrosion resistance of copper. In order to fabricate the copper clad steel wire, several processes including electro-plating, tubecladding extrusion process and dip forming process have been introduced and applied. The electroplating process for the production of copper clad steel wire shows poor productivity and induces environmental load generation such as electroplating solution. The dip forming process is suitable to mass production of copper clad steel such as trolley wire. and need expensive manufacturing facilities. The present paper describes the improvement of the conventional continuous casting process to fabricate copper clad steel wire, which its core metal is low thermal expansion Fe-Ni alloy and its sheath material is copper. In particular, the formation of intermetallic compound at interface between core and sheath was investigated in order to introduce optimum continuous casting process parameter for fabrication of copper clad steel wire with higher electrical conductivity. The mechanical strength of copper clad steel wire was also investigated through wiredrawing process with of 95% in total reduction ratio.

• 전기화학회지
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• 제9권4호
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• pp.141-150
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• 2006

도금용액 내 텅스텐 이온 농도, 전류밀도, 도금용액 pH의 변화가 CoW 박막/후막의 화학조성, 전류효율, 잔류응력, 표면형상, 미세결정 구조, 결정립 크기에 미치는 영향을 조사하기 위하여, citrate 도금용액으로부터 전기도금공정에 의해 나노결정립 CoW 박막/후막 합금을 제조하였다. CoW 박막/후막에서 전기도금된 텅스텐 함량은 도금용액내의 텅스텐 이온 농도, 전류밀도, pH를 증가시킴에 따라 증가하였다. CoW 박막/후막에서 잔류응력은 도금용액내의 텅스텐 이온 농도와 pH를 증가시킴에 따라 감소함을 관찰하였다. CoW 박막/후막은 0.02M로부터 0.08M 범위의 텅스텐 이온 농도에서 hcp Co [(100), (002)]와 hop $Co_3W$ [(002), (201)] 혼합된 상들을 나타내었다. 그러나 0.1 M로부터 0.2M 범위의 텅스텐 이온 농도에서는 비정질에 가까운 상들을 나타내었다. 5, 10, 25, $100mA{\cdot}cm^{-2}$의 전류밀도에서 CoW 박막/후막은 hop Co (002)와 hcp $Co_3W$ [(200), (002), (201)] 상들로 구성되어 있다 그러나 50과 $75mA{\cdot}cm^{-2}$의 전류밀도에서는 비정질에 가까운 상들을 나타내었다. 8.7의 도금용액 pH에서 CoW 박막/후막은 hcp Co (002)와 hcp $Co_3W$ [(200), (002), (201)]상들을 나타내었다. 그러나 8.7 이하위 도금용액 pH 에서는 비정질에 가까운 상을 나타내었다. CoW 박막/후막의 최적 전기도금조건은 0.08M의 텅스텐 이온농도, $10mA{\cdot}cm^{-2}$ 전류밀도, 8.7의 도금용액 pH로 관찰되었다.