• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.104-104
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• 1997

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.553-556
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• 2009

We investigated an application of supramolecular protein, and demonstrated the metal induced lateral crystallization utilizing ferritins with Ni nanoparticles, named the "bio-nano-crystallization". So far, this method has required long time, because of this method condition based on the conventional solid phase crystallization. In this study, we applied the pulsed rapid thermal annealing to bio-nanocrystallization. As a result, we succeeded in the crystallization for a short time. We found that the TFTs characteristics were improved with decrease metal impieties in poly-Si thin films by this method.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1400-1402
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• 2002

금속유도 측면 결정화 (Metal Induced Lateral Crystallization; MILC)를 통하여 형성한 다결정 실리콘 박막에 엑시머 (excimer) 레이저를 조사하여 우수한 특성을 갖는 박막 트랜지스터를 제작하였다. MILC 공정 중에 형성되는 금속 유도 결정화 (Metal Induced Crystallization; MIC) 실리콘 박막은 다량의 Ni을 함유하고 있기 때문에, 이에 인접한 MILC 실리콘 박막 내에는 니켈 농도의 점진적인 차이가 발생한다. MILC 다결정 실리콘 박막 내의 Ni 농도 차이는 실리콘 박막의 용융점 차이를 유발하여 레이저 결정화 시에 매우 큰 실리콘 결정립의 성장을 유도한다. 새로운 다결정 실리콘 박막 트랜지스터는 기존의 레이저 결정화 방식으로 제작한 다결정 실리콘 박막 트랜지스터에 비하여 40% 향상된 전계효과 이동도를 나타내었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.188-188
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• 2003

본 연구에서는 Pd에 의한 MILC(Metal induced lateral crystallization)시 수소 플라즈마 처리의 영향에 따른 결정화 양상 및 TFT에 미치는 효과에 대해 고찰하였다. 현재까지 Pd에 의한 MILC에 의해 Channel이 제작된 TFT는 Transfer curve 특성을 보이지 않는것으로 보고되어 있다. 이는 바늘 모양의 성장으로 인해 결정질 부분이 다 채워지지 않고 비정질 부분이 존재하고, 결정질 내에 쌍정 결함이 존재하기 때문인 것으로 알려져 있다. 본 실험에서는 수소 플라즈마 처리 시 Pd에 의한 MILC 양상이 수소 플라즈마 처리를 하지 않은 경우와는 달리 측면 결정화 양상이 바늘 모양의 성장 모습을 보이지 않고, 결정질 부분이 다 채워진 평탄한 모양의 성장 모습을 보였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.114-114
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.115-115
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.68.3-68
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• 1998

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.461-465
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• 2008

The phase transformation in a film influences its surrounding. Effects of the precrystallization method, which removes influences on gate oxide caused by lateral crystallization, in metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor devices and circuits were studied. Device by the method was shown to have a higher current drive, compared with conventional postcrystallized device. Moreover, we studied DC bias-induced changes in the performance of ring oscillator. PMOS inverters fabricated using precrystallized silicon films have very high dynamic and stable performance, compared with inverters fabricated using postcrystallized silicon films.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.477-481
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• 2004

High quality polycrystalline silicon is very critical part of the high quality thin film transistor(TFT) for display devices. Metal induced lateral crystallization(MILC) is one of the most successful technologies to crystallize the amorphous silicon at low temperature(below $550^{\circ}C$) and uses conventional and large glass substrate. In this study, we observed that the MILC behavior changed with abrupt variation of the amorphous silicon active pattern width. We explained these phenomena with the novel MILC mechanism model. The 10 nm thick Ni layers were deposited on the glass substrate having various amorphous silicon patterns. Then, we annealed the sample at $550^{\circ}C$ with rapid thermal annealing(RTA) apparatus and measured the crystallized length by optical microscope. When MILC progress from narrow-width-area(the width was $w_2$) to wide-width-area(the width was $w_1$), the MILC rate decreased dramatically and was not changed for several hours(incubation time). Also the incubation time increased as the ratio, $w_1/w_2$, get larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transformation from amorphous silicon to crystalline silicon.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.315-318
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• 2004

We developed a vapor induced crystallization (VIC) process for the first time to obtain high quality polycrystalline Si films by sublimating the mixture of $AlCl_3$ and $NiCl_2$. The VIC process enhanced the crystallization of amorphous silicon thin films. The LPCVD amorphous silicon thin films were completely crystallized after 5 hours at 480 $^{\circ}C$. It is known that needle-like grains with very small width grow in the Ni-metal induced lateral crystallization. In our new method, the width of grains is larger because the grain can also grow perpendicular to the needle growth direction. Also the interface between the merging grain boundaries was coherent. As the results, a polycrystalline film with superior microstructure has been obtained.