• Title/Summary/Keyword: metal seed

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Seasonal Resveratrol Contents of Wild-type Mulberry Leaves Collected from Gangwon Province in Korea (강원도에서 채취한 야생 뽕잎의 생육 시기별 resveratrol 함량)

  • Kim, Hyun-Bok;Kim, Jung-Bong;Kim, Sun-Lim;Seok, Young-Seek;Sung, Gyoo-Byung
    • Journal of Sericultural and Entomological Science
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    • v.50 no.1
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    • pp.10-14
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    • 2012
  • Resveratrol is naturally occurring phytoalexin compounds produced by grape berries, peanuts, pine tree, mulberry fruits and their products in response to stress such as fungal infection, heavy metal ions or UV irradiation. The objective of this study was to determine resveratrol contents in wild-type mulberry leaves (Morus alba L., M. bombycis Koidz, and M. Lhou (Ser.) Koidz) collected from Won-ju, In-je and Yang-yang regions, Gangwon province, Korea. Resveratrol contents in wild-type mulberry leaves were higher in Autumn's than in Spring's, and higher than 16 cultivar's. Among the samples, 'No. 3', collected from Won-ju region and 'No. 7' collected from In-je showed high resveratrol contents of 539 and $491{\mu}g$/100 g DW (dry weight; DW), respectively, through the collection time. Therefore, two mulberry trees might be promising as potent resources for mulberry breeding and functional material development.

플라즈마 표면 처리를 이용한 ZnO 습식성장 패터닝 기술 연구

  • Lee, Jeong-Hwan;Park, Jae-Seong;Park, Seong-Eun;Lee, Dong-Ik;Hwang, Do-Yeon;Kim, Seong-Jin;Sin, Han-Jae;Seo, Chang-Taek
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.330-332
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    • 2013
  • 소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$$CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.

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Hybrid MBE Growth of Crack-Free GaN Layers on Si (110) Substrates

  • Park, Cheol-Hyeon;O, Jae-Eung;No, Yeong-Gyun;Lee, Sang-Tae;Kim, Mun-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.183-184
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    • 2013
  • Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was >99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

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Quilitative certificational plan of heshouwu (하수오(何首烏)의 품질인증(品質認證) 방안(方案))

  • Shin, Mi-Kyung;Roh, Seong-Soo;Kil, Ki-Jeong;Seo, Bu-il;Seo, Young-Bae
    • Journal of Haehwa Medicine
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    • v.13 no.2
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    • pp.205-212
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    • 2004
  • Now many sustitution and false articles is used in korea instead of heshouwu. To use heshouwu correctly, we will make a quilitative certificational plan of heshouwu to investigate all of lieraturea, records and documents. And we could reach conclusions as folloews. 1) Source of plant Heshouwu is a root tuber of a perennial herb Polygonum multiflorum Thunberg(Family : Polygonaceae). 2) Harvest After planting 3-5 yaers, harvesting in an autumn, washin clean the mud, a big heshouwu cut off a half or section, dry in sunny place or at a little fire. When harvesting, we harvest only a big thing, a small thing transfer a field, after culturing of 1-2 years, harvest at big roots. Harvesting is done usually in an autumn after 3 years. When collecting a seed, we must harvest a heshouwu the next year. 3) Process We must process heshouwu at the decoction of black beans, heshouwu suck in the decoction of black beans, heat with steam in an iron pot. Black beans is used every 100 kg of heshouwu. 4) Quility (1) Funstional standards It is good that weight is heavy and outer skin is yellow-brown, section surface is light red color, powdery and has a figure such as clouds in section. (2) Physicochemical standards Heshouwu expesses a various chang of components in process of working. We think that it need to add a standard of detection about 2,3,5,4'-tetrahrdroxystilbene-2-O-${\beta}$ -D-glucoside in a current authentic document which is a water-soluble component of heshouwu. It must that Dry on loss is less than 14.0%, content of ash is less than 5.0%, Content of acid-nonsoluble ash is less than 1.5%, Content of extract is more than 17.0%. A fixed quantity of 2,3,5,4'-tetrahrdroxystilbene-2-O-${\beta}$ -D-glucoside is more than 1.0%. Contens of heavy metal has to detect less than 30 ppm and there is no reminding agriculural medince.

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Activation Mechanism of Protease in the Germination of Mulberry Seeds (뽕나무 종자 발아시의 Protease 발현기구)

  • 배계선
    • Journal of Sericultural and Entomological Science
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    • v.35 no.1
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    • pp.1-6
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    • 1993
  • The activity change of mulberry seeds protease was compared during germination for 5 days at 28$^{\circ}C$ in the dark place after daily hormone injection of different concentration. The protease from germinated mulberry seeds for 4 days was partially purified and the enzyme characteristics was investigated. The protease activity of mulberry seeds treated by hormone was highest with 10 $\mu$m GA3 followed by 10 $\mu$M zeatin and 10 $\mu$M kinetin. The protease activity of mulberry seeds was increased by 14% with 10ml agar culture that control at 4th day of germination. The protease from mulberry seeds was purified 313 fold by DEAE-Toyo-pearl 650M, Butyl-Toyopearl, Hydrozylapatite and Toyopearl HW 55M. After purification, the specific activity of the enzyme was 175 units/mg. Optimum pH and temperature of protease from mulberry seeds was 5.0 and 37$^{\circ}C$, respectively. The protease was stable below 37$^{\circ}C$ and the enzyme activity was decreased by 50%, when incubated at 52$^{\circ}C$ for 10minutes. The protease activity of mulberry seeds was inhibited by metal ions such as mercury, iron, zinc, copper, but activited by magnesium, choromium, aluminium ions. The Km value of the protease was 0.89mM with azocasein as a subscribe.

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Effects of Heavy Metal Concentrations on Seed Germination and Rhizome Development of Campanula takesimana Nakai (중금속 농도가 섬초롱꽃 종자 발아 및 유근 발달에 미치는 영향)

  • Kim, Tae Hyun;Kim, Do Hyun;Im, Hyeon Jeong;Choi, Kyu Seung;Kim, Sang Geun;Song, Chi Hyeon;Oh, Beom Seok;Kim, Yang Su;Song, Ki Seon;Won, Chang O
    • Proceedings of the Plant Resources Society of Korea Conference
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    • 2019.10a
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    • pp.39-39
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    • 2019
  • 섬초롱꽃은 울릉군에 한정적으로 분포하는 여러해살이풀이다. 산림청에서는 약관심종(LC) 등급의 희귀식물이자 특산식물로 분류하고 있으며, 꽃의 관상가치가 특히 높아 화단용 소재, 절화용, 화분재배 등으로 흔히 이용되고 있다. 따라서 본 연구는 섬초롱꽃의 대량증식 시, 중금속이 미칠 수 있는 영향에 대해 파악하고자 수행하였다. 실험에 사용한 중금속은 카드뮴(Cd), 철(Fe) 두 종류이며, 두 종류 모두 1% 한천(agar)배지에 10, 25, 50, 100, 200 mg/L 농도로 녹여 사용하였다. 발아율 및 유근 생장을 위해 종자 및 유묘를 치상 후, $25^{\circ}C$ 항온 생장상에서 발아율 및 유근 발달을 관찰하였다. 발아율 측정결과, 아무처리도하지 않은 1% 한천(agar) 배지에서 $62.7{\pm}7.4%$로 가장 높았고 중금속 농도가 높아질수록 감소하였다. 카드뮴(Cd) 처리구에서는 10, 25, 50, 100, 200 mg/L 농도에서 각각 $17.3{\pm}1.3$, $2.7{\pm}1.3$, $1.3{\pm}1.3$, 0, 0%로 나타났다. 한편, 철(Fe) 처리구에서는 10, 25, 50, 100, 200 mg/L 농도에서 각각 $46.7{\pm}4.8$, $24.0{\pm}2.3$, $36.0{\pm}6.9$, $20.0{\pm}2.3$, 0%로 나타났다. 유근의 평균 생장 길이(mm)는 아무처리도 하지 않은 1% 한천(agar) 배지에서 19.6 mm로 가장 높았고, 중금속 농도가 높아질수록 낮게 나타났다. 카드뮴(Cd) 처리구에서는 10, 25, 50, 100, 200 mg/L 농도에서 각각 4.6 mm, 1.9 mm, 0.7 mm, 0.9 mm, 0 mm 생장한 것으로 나타났다. 한편, 철(Fe) 처리구에서는 10, 25, 50, 100, 200 mg/L 농도에서 각각 15.9 mm, 8.6 mm, 8.1 mm, 0.9 mm, 0 mm 생장한 것으로 나타났다. 실험결과를 종합해 볼 때, 섬초롱꽃 종자 발아 및 유근 생장의 억제는 카드뮴(Cd) 처리구에서 높게 나타났고, 철(Fe) 처리구에서는 비교적 영향을 덜 미치는 것으로 나타났다. 특히 카드뮴은 10 mg/L 농도만 처리하더라도 약 3.6~4.2배의 발아율 생장율 감소가 나타나, 섬초롱꽃 대량증식 시, 치명적일 것으로 판단된다. 본 실험의 결과는 섬초롱꽃 종자를 이용한 대량증식 및 유묘재배에 있어, 토양을 선택하는데 중요한 기초자료로서 활용될 것으로 기대된다.

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Other Processed Products, Monitoring and the Exposed Dose Assessment of Heavy Metal, the Illegal Compounds (기타가공품의 중금속, 부정유해물질 모니터링 및 노출량 평가)

  • Jang, Jin-Seob;Kwon, Mun-Ju;Kim, Meyong-Hee;Park, Jin-Soo;Lim, Soo-Sun;Kwon, Sung-Hee;Song, Sung-Min;Yeo, Eun-Young;Hong, Seong-Hee;Kim, Jung-Im;Om, Ae-Son
    • Journal of Food Hygiene and Safety
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    • v.30 no.1
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    • pp.35-42
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    • 2015
  • This study was performed for both evaluating the safety of other processed products and providing basic information for making the general standard for contaminants in the category of other processed products. We analyzed the contents of three heavy metals, thirty six anti-impotence drugs and their analogues, three anti-obesity drugs and their analogues, twenty eight steroid drugs and their analogues, collecting in Incheon Metropolitan City. Any illegal compound was not detected in those products. However the contents of lead, cadmium and mercury of those products were at the range of 0.001-13.390 mg/kg, 0.03-1.231 mg/kg and 0.001-0.650 mg/kg respectively. Because there are no standards of heavy metals against other processed products, we compared the analytical results with relevant standards of both S. Korea and foreign countries. As a result, two products exceeded the relevant standards of lead, and other two products exceeded the relevant standards of mercury. The relative hazards compared to PTWI of FAO/WHO (Codex), Seafoods-pajeonmix, Perilla seed powder exceeded PTWI standards 0.214. The compulsory standards of each food product are determined by the category of the products. Because there is no standard of heavy metals in the category of other processed products in S. Korea, any food products registered as other processed product by manufacturer are free with those standards. Abusing similar problems on the categorization of food products could cause consumers' health problem. To prevent these problems, detail regulations on the categorization of food products have to be introduced.

Effect of Artificial Light Sources on the Growth of Apple Rootstock M.9 Seedling (인공광원이 사과 대목 M.9 묘 생육에 미치는 영향)

  • So, Eun Hee;An, Jin Hee;Kim, Jae Kyung;Yoon, Yeo Joong;Park, So Jeong;Na, Jong-Kuk;Choi, Ki Yong
    • Journal of Bio-Environment Control
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    • v.27 no.4
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    • pp.341-348
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    • 2018
  • To investigate the effect of light sources on the growth and photosynthesis of the dwarf apple rootstock M.9 for the production of standard seedlings, the plants were cultivated in a controlled environment for 6 weeks. The sources of light are six treatments [Red (R), Blue (B), White (W), RBUV (R7B3 containing UV-A), RBW (R3B1W1), SMF (high pressure sodium + metal halide + fluorescent lamp) under $154{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. Growth characteristics of apple seedlings varied depending on artificial light source at 3 weeks and 6 weeks. The plant height of apple seedling was high in the R, RBUV, RBW, and SMF light sources at 3 weeks, and in the R light at 6 weeks. There was no significant difference on stem diameter among the treatments at 3 weeks, but showed high in RBUV and RBW light at 6 weeks. Leaf number was the highest in RBUV light at 3 and 6 weeks. The chlorophyll content (SPAD value) was high in the B and RBUV light at 3 weeks, but it was not significant at 6 weeks. The growth rate to height of the R light (1.12mm/day) was the highest among the treatments, followed by RBUV, RBW, SMF, W and then B. Leaf area was the highest in RBUV and RBW lowest in B. Specific leaf area was high in W and fresh and dry weight were high in RBUV. The photosynthetic rate at 6 weeks was highest in the B and lowest in the R. Stomatal conductivity and transpiration rate were higher in the B and W compared to the other light sources. Therefore, we are considered that light sources for growth of dwarf apple rootstock M.9 seedlings are suitable the R, RBUV, and RBW light sources with a high mixing ratio of Red and Red +Blue.