• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Korean Journal of Environmental Agriculture
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• v.16 no.2
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• pp.142-148
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• 1997

This study was performed to develop the biological treatment technology of wastewater polluted with heavy metals. Heavy metal-tolerant microorganisms, such as Pseudomonas putida, P. aeruginosa, P. chlororaphis and P. stutzeri possessing the ability to accumulate cadmium, lead, zinc and copper, respectively, were isolated from industrial wastewaters and mine wastewaters polluted with various heavy metals. The effect of competing ions and metabolic inhibitors on heavy metal accumulation in the cells was investigated. Heavy metal accumulation into cells was drastically decreased in the presence of competing cation, $Al^{3+}$, and also decreased, at a lesser extent, in the presence of competing anions, $CO_3\;^{2-}$ and $PO_4\;^{2-}$. But heavy metal accumulation was not influenced generally in the presence of the other rations and anions. The accumulation of Cd, Zn or Cu by Cd-, Zn- or Cu-tolerant microorganism was remarkably decreased in the presence of metabolic inhibitors, but the accumulation of Pb by Pb-tolerant microorganism was little affected in the presence of metabolic inhibitors. These results suggested that the accumulation of Cd, Zn or Cu by Cd-, Zn- or Cu-tolerant microorganism was concerned with the biological activity depending on energy, and the accumulation of Pb by Pb-tolerant microorganism depended on not the biological activity but the physical adsorption on the cell surface. Each heavy metal-tolerant microorganism also exhibited some ability to accumulate the other heavy metals in solution containing equal concentrations of cadmium, lead, zinc and copper, when measured at 48 hours after inoculation of the microorganisms, but the accumulation rates were somewhat low as compared to the accumulation rates of heavy metal fitting to each tolerance. These results suggested that the accumulation of each heavy metal by each heavy metal-tolerant microorganism was a selective accumulation process.

• Journal of Microbiology and Biotechnology
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• v.21 no.2
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• pp.192-196
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• 2011

Microbial induction of rusty-root was proved in this study. The enzymes hydrolyzing plant structural materials, including pectinase, pectolyase, ligninase, and cellulase, caused the rusty-root in ginseng. Pectinase and pectolyase produced the highest rusty-color formation. Ferrous ion ($Fe^{+++}$) caused the synergistic effect on rusty-root formation in ginseng when it was used with pectinase. The effect of ferric ion ($Fe^{++}$) on rusty-root formation was slow, compared with $Fe^{+++}$, probably due to gradual oxidation to $Fe^{+++}$. Other metal ions including the ferric ion ($Fe^{++}$) did not affect rusty-root formation. The endophytic bacteria Agrobacterium tumefaciens, Lysobacter gummosus, Pseudomonas veronii, Pseudomonas marginalis, Rhodococcus erythropolis, and Rhodococcus globerulus, and the rotten-root forming phytophathogenic fungus Cylindrocarpon destructans, caused rusty-root. The polyphenol formation (rusty color) was not significantly different between microorganisms. The rotten-root-forming C. destructans produced large quantities of external cellulase activity (${\approx}2.3$ U[${\mu}m$/min/mg protein]), which indicated the pathogenecity of the fungus, whereas the bacteria produced 0.1-0.7 U. The fungal external pectinase activities (0.05 U) and rusty-root formation activity were similar to those of the bacteria. In this report, we proved that microbial hydrolyzing enzymes caused rusty-root (Hue value $15^{\circ}$) of ginseng, and ferrous ion worsened the symptom.

• Analytical Science and Technology
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• v.8 no.2
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• pp.187-193
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• 1995

A PVC membrane ion-selective electrodes based on N,N,N,N-tetrabenzylethylenediamine as neutral carrier has been prepared by addition of plasticizers such as phthalates and sebacate and liphophillic additives such as NaTPB. The membrane electrodes were investigated to the electric resistance, response range to hydrogen ion and the interfering effect of alkali and alkline earth metals. A electric resistance hardly had on effect of plasticizers. In case of 0.7% NaTPB added to membrane, response of the electrodes were shown the values near to theoretical Nernstian slope and interferences by alkali and alkaline earth metal were few influenced. The performances of pH-selective electrodes were shown linerality to hydrogen ion between pH 2 and 10 in the presense of alkali and alkaline earth ions. Reproducibility and stability tests were shown good results in the same pH range.

• Analytical Science and Technology
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• v.17 no.3
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• pp.199-210
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• 2004

A new polystyrene-divinylbenzene chelating resin containing 4,5-dihydroxy-naphthalene-2,7-disulfonic acid (chromotropic acid : CTA) as functional group has been synthesized and characterized. The sorption and desorption properties of this chelating resin for Cr(III) ion and Cr(VI) ion including nine metal bloodstain. As a results, FOB test kit could be effectively applied to identification of human blood at chelating resin was stable in acidic and alkaline solution. The Cr(VI) ion is selectively separated from Cr (III) ion at pH 2 and the maximum sorption capacity of Cr(VI) ion is 1.2 mmol/g. In the presence of anions such as $F^-$, $SO{_4}^{2-}$, $CN^-$, $CH_3COO^-$, $NO{_3}^-$, the sorption of Cr(VI) ion was reduced but anions such as $PO{_4}^{3-}$ and $Cl^-$ revealed no interference effect. The elution order of metal ions obtained from breakthrough capacity and overall capacity at pH 2 was Cr(VI)>Sn(II)>Fe(III)>Cu(II)>Cd(II)${\simeq}Pb(II){\simeq}Cr(III){\simeq}Mn(II){\simeq}Ni(II){\simeq}Al(III)$. Desorption characteristics for Cr(VI) ion was investigated with desorption agents such as $HNO_3$, HCl, and $H_2SO_4$. It was found that the ion showed high desorption efficiency with 3 M HCl. As the result, the chelating resin, XAD-16-CTA was successfully applied to separation and preconcentration of Cr (VI) ion from several metal ions in metal finishing works.

• The korean journal of orthodontics
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• v.28 no.1 s.66
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• pp.123-133
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• 1998

The effectiveness of TiN ion-plating was examined with TiN ion-plated Co-Cr wires(.016“, .016”x.022“) on three different types of bracket(TiN ion-plated metal bracket ceramic bracket and plastic bracket). Maximum static frictional forces and characteristic curves obtained from the frictional characteristic graph, were compared and surface roughness of wires and bracket slots before and after friction experiment was observed by SEM. The obtained results were as follows $\cdot$The frictional forces of TiN ion-plated wires were significantly lower than those of non ion-plated wires(p<0.05). $\cdot$On the effect of wire shape, the frictional forces of round wires were significantly lower than those of rectangular wires(p<0.05) $\cdot$As the result of the SEM observation on the wires and bracket slots after the friction experiment the surface of non ion-plated wires was rougher than that of TiN ion-plated ones. $\cdot$The difference between the static frictional forces and the kinetic frictional forces was not significant in case of the TiN ion-plated round ins, but the static frictional forces were a little higher than the kinetic frictional forces in the TiN ion-plated rectangular wires. $\cdot$The static frictional forces were much higher than the kinetic frictional forces in the case of non ion-plated wires.

• Journal of environmental and Sanitary engineering
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• v.24 no.1
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• pp.33-39
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• 2009

In order to investigate effect of metal ion and antioxidant on rancidity of crude rapeseed oil (CRO), $Fe^{2+}$, $Cu^{2+}$, $Co^{2+}$, $Ni^{2+}$, $Cr^{2+}$, $Sn^{2+}$, $Mn^{2+}$, $Zn^{2+}$, and antioxidants including BHA, Vitamin C, and Tocopherol were used. The specific gravity and refractive index of CRO were $0.92g/cm^3$ and 1.45, respectively. The chromaticities of light, red, and yellow in CRO were 88.6 and 98.7, respectively. Among various fatty acids, Oleic acid (C18:1) concentration was highest, 62.3% and Linoleic acid (C18:2) concentration was 19.16%. In the case of Linolenic acid (C18:3) and Palmitic acid (C16:0), they were 9.88 and 5.2%, respectively. The concentrations of unsaturated fatty acids and saturated fatty acid were 92.2 and 7.8%, respectively. The degree of expediting rancidity of CRO was an order of $Fe^{2+}$> $Cu^{2+}$> $Cr^{2+}$> $Zn^{2+}$> $Ni^{2+}$> $Al^{2+}$> $Mn^{2+}$> $Mn^{2+}$> $Sn^{2+}$> $Co^{2+}$> $Li^{2+}$. Especially, when $Cu^{2+}$ and $Fe^{2+}$ was used, the peroxide value concentration was about 4.0 fold higher than non addition of them. The inhibition effect of rancidity of CRO using antioxidant with $Cu^{2+}$ and $Fe^{2+}$ was an order of BHA> Vitamin C> Tocopherol.

• Membrane Journal
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• v.30 no.1
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• pp.38-45
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• 2020

Although Lithium metal battery (LMB) has a very large theoretical capacity, it has a critical problem such as formation of dendrite which causes short circuit and short cycle life of the LMB. In this study, PDMS/GO composite with evenly dispersed graphene oxide (GO) nanosheets in poly (dimethylsiloxane) (PDMS) was synthesized and coated into a thin film, resulting in the effect that can physically suppress the formation of dendrite. However, PDMS has low ion conductivity, so that we attained improved ion conductivity of PDMS/GO thin film by etching technic using 5wt% hydrofluoric acid (HF), to facilitate the movement of lithium (Li) ions by forming the channel of Li ions. The morphology of the PDMS/GO thin film was observed to confirm using SEM. When the PDMS/GO thin film was utilized to lithium metal battery system, the columbic efficiency was maintained at 87.4% on average until the 100^th cycles. In addition, voltage profiles indicated reduced overpotential in comparison to the electrode without thin film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.522-529
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• 2013

In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.