• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.26-38
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• 2010

Degradation in Solid Oxide Fuel Cell performance can be ascribed to the following fundamental processes from the materials chemical point of view; that is, diffusion in solids and reaction with gaseous impurities. For SOFC materials, diffusion in solids is usually slow in operation temperatures $800\sim1000^{\circ}C$. Even at $800^{\circ}C$, however, a few processes are rapid enough to lead to some degradations; namely, Sr diffusion in doped ceria, cation diffusion in cathode materials, diffusion related with metal corrosion, and sintering of nickel anodes. For gaseous impurities, chromium containing vapors are important to know how the chemical stability of cathode materials is related with degradation of performance. For LSM as the most stable cathode among the perovskite-type cathodes, electrochemical reduction reaction of $CrO_3$(g) at the electrochemically active sites is crucial, whereas the rest of the cathodes have the $SrCrO_4$ formation at the point where cathodes meet with the gases, leading to rather complicated processes to the degradations, depending on the amount and distribution of reacted Cr component. These features can be easily generalized to other impurities in air or to the reaction of nickel anodes with gaseous impurities in anode atmosphere.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.17-22
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• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.412-417
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• 1999

The analytical results obtained by microwave digestion and acid digestion methods for sample pretreatment to determine metal impurities in silicon wafer by inductively coupled plasma-mass spectrometry (ICP-MS) were compared. In order to decompose the silicon wafer, a mixed solution of $HNO_3$ and HF was added to the sample and the metal elements were determined after removing the silicon matrix by evaporating silicon in the form of Si-F. The recovery percentages of Ni,Cr and Fe were found to be 95∼106% for both microwave digestion and acid digestion methods. The recovery percentage of Cu obtained by the acid digestion method was higher than that obtained by the microwave digestion method. For Zn, however, the microwave digestion method gave better result than the acid digestion method. Fe was added to a silicon wafer using a spin coater. The concentration of Fe in this sample was determined by lCP-MS, and the same results were obtained in the two pretreatment methods.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.13-19
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• 1998

We have calculated the electronic structure of impurity atoms in metal host by using the tight binding model in the recursion method. For a self-consistent calculation, we assumed that the effect of impurity introduction was localized only at the impurity site and its neighbours. We calculated the Madelung term by limiting the contribution to Vm of the charge perturbations to the first shell around the impurity with Evjen technique. The calculated local density of states and charge transfer values have been compared with the experimental values for a single impurity in metal host. We fund that d-reso-nance state came from the repulsive interaction between impurity d-state and host band, and the position of d-resonance state depended on the difference of valence electrons between the host and the impurity. the results also showed that the charge transfer value between an impurity and host metal was comparable to the ionicity difference between them.

• Journal of Industrial Technology
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• v.28 no.A
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• pp.19-22
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• 2008

In recent years, much attention has been paid to "Photocatalytic oxidation" as an alternative technique, where the pollutants are degraded by UV-irradiation in the presence of a semiconductor suspension such as titanium dioxide. $TiO_2$ is the most often used photocatalyst due to its considerable photocatalytic activity, high stability, non-environmental impact and low cost. 1n this research, the photocatalytic degradation of humic acid, acetaldehyde and methylene blue in $UV/TiO_2$ systems has been stydied. The effect of calcination temperature for manufacturing of $TiO_2$ photocatalysts and type of photocatalysts on photodegradation has been investigated. Photocatalysts with various metal ions(Mn, Fe, Cu and Pt) loading are tested to evaluate the effects of metal ions impurities on photodegradation. The photodegradation efficiency with $Pt-TiO_2$ or $Fe-TiO_2$ or $Cu-TiO_2$ is higher than Degussa P-25 powder. However, the photodegradation efficiency with $Mn-TiO_2$ is lower than Degussa P-25 powder. The photocatalytic properties of the nanocrystals were strongly dependent upon the crystallinity, particle size, standard reduction potential of various transition metal and electronegativity of various transition metal. As a result photocatalysts with various metal ion loading evaluated the effect of photodegradation.

• Resources Recycling
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• v.29 no.5
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• pp.3-14
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• 2020

Magnesium is the third most abundant structural metal after aluminum and iron. Magnesium is the lightest metal in the common metals. It has a density 33 % less than aluminum and 77% lower than steel. However, the primary magnesium production process is highly energy intensive. The recycling of magnesium scrap reduces the energy consumption and environmental burden, comparing to the primary metal production. However, the amount of recovered metal from scrap is limited because of the difficulties to remove the impurities in the scrap. This work provides an overview of the magnesium production and recycling process.

• Resources Recycling
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• v.28 no.2
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• pp.3-13
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• 2019

Aluminum is the most abundant metal and the second most plentiful metallic element in the earth's crust, after silicon. Aluminum is a light, conductive, and corrosion resistant metal with strong affinity for oxygen. However, the primary aluminum production process is highly energy intensive. The recycling of aluminum scrap reduces the energy consumption and environmental burden, comparing to the primary metal production. However, the amount of the recovered metal from scrap is limited because of the difficulties to remove the impurities in the scrap. This work provides an overview of the aluminum production and recycling process, from the preparation of alumina to the scrap upgrading and the melting process.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.12-17
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• 2001

It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal. It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal.

• Journal of the Korean Society of Food Science and Nutrition
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• v.22 no.4
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• pp.500-509
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• 1993

Pectins present in the primary cell walls and middle lamellae of plant cell walls are extracted by water, cheating agents, acid or alkali solutions. However, some neutral contaminating components are extracted in conjunction with pectins during the extraction process. Thus, the accurate characterization of physi-cochemical properties of pectins necessitates to get rid of the impurities. In this review, dialysis, alcohol precipitation, ion exchange chromatography and metal precipitation were compared as procedures to purify the pectin extracts. In addition, the chemical methods to analyze pectins are discussed in terms of three major chemical constituents, i.e., anhydrogalacturonic acid, methoxyl groups and neutral sugars.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.56-56
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• 2005